Search results for "ferroelectricity"

Electrical Transport in Lead-Free [(1−x)(Na0.5Bi0.5)-xBa]Zr1 - yTiyO3Ceramics (x = 0, 0.06, and y = 0, 0.96)

2009

Lead-free ceramics based on (Na 0.5 Bi 0.5 TiO 3 , NBT)-(Ba(Ti,Zr)O 3 , BTZ) were prepared by solid phase hot pressing sintering process and their ac (σ ac ) and dc (σ dc ) conductivity have been studied (303–753 K). Low frequency (100 Hz–100 kHz) ac conductivity obeys power law σ ac ∼ ω s characteristic for disordered materials. The frequency exponent s is a decreasing function of temperature and tends to zero at high temperatures. Dc conductivity has thermally activated character and possesses four linear parts with four different activation energies and some discontinous changes. However, σ ac (T) possesses two linear parts with two different activation energies and more discontinuous ch…

Dielectric and Ferroelectric Properties of Lead-Free NKN and NKN-Based Ceramics

2011

Lead-free ceramics of Na0.5K0.5NbO3 (NKN), Na0.5K0.5(Nb0.94Sb0.06)O3 (NKNS6) and Na0.5K0.5(Nb0.94Sb0.06)O3 + 0.5%MnO2 (NKNS6 + 0.5%MnO2) have been prepared by a solid phase hot pressing sintering process. X-ray diffraction results show that the obtained samples possess the perovskite structure. The micrograph of the fractured surface showed a dense structure in a good agreement with that of 91–94% relative density determined by the Archimedes method. An average grain size decreases with Sb and Mn doping (from about 20 μm for NKN to about 5 and 2 μm for NKNS6 and NKNS6 + 0.5%MnO2, respectively). Low frequency (100 Hz–200 kHz) investigations revealed the diffuse phase transitions. It was foun…

Processing and properties of nanocrystalline Pb(Sc0.5Ta0.5)O3, Pb(Sc0.5Nb0.5)O3, Pb(Mg1/3Nb2/3)O3and Pb0.76Ca0.24TiO3films and ferroelectric/ relaxor…

2001

Abstract Thin films of relaxor materials, namely Pb(Sc0.5Ta0.5)O3 (PST), Pb(Sc0.5Nb0.5)O3 (PSN) and Pb(Mg1/3Nb2/3)O3 (PMN), and of Pb0.76Ca0.24TiO3 (PTC), which is a classical ferroelectric as bulk material, have been produced to examine whether nanocrystalline relaxor materials show influences in their properties if their grain size is reduced to dimensions known from their nanodomains and to investigate effects in a superlattice of nanocrystalline ferroelectric and relaxor films. At first amorphous films of the different materials were deposited onto a Ti/Pt coated Silicon (100) wafer by reactive rf-sputtering. Different grain sizes could be prepared by a controlled annealing process. The…

Dielectric properties of reactor irradiated ferroelectric thin films

2001

Abstract Radiation effects in highly oriented Pb1Zr0.53Ti0.47O3 (PZT), Pb0.94La0.06Zr0.65Ti0.35O3 (PLZT-6), and PbiZriO3 (PZ) ferroelectric (FE) and antiferroelectric (AF) thin films are investigated in view of their possible application as a temperature sensitive element in a new bolometer system for ITER (International Thermonuclear Experimental Reactor). The dielectric properties (i.e. hysteresis loops, dielectric constants) of the films were investigated in a frequency range from 20 to 105 Hz and at temperatures up to 450 °C, before and after neutron irradiation to a neutron fluence of 5×1021 m−2 (E<0.1 MeV). The dielectric constant was measured during cooling with 1.7 °Cmin−1. The diel…

The Effect of Grain Size of the Stock on Electrical Characteristics of the Li0.03Na0.97Ta0.05Nb0.95O3Perovskite Ceramics

2012

The microstructure and electrical properties of two samples of the ferroelectric Li0.03Na0.97Ta0.05Nb0.95O3 ceramic solid solution prepared from initial charge stocks of different dispersity by conventional ceramics technology are compared. The average size of grains and concentration of pores in the samples are found to be of little difference while the electrical properties of the ceramics are strongly affected by the grain size of the initial mixture. The difference in properties is due to conditions at the diffusion stage of the solid-phase synthesis caused by differences in composition of larger grains rather than the grain size itself.

Reversible Physical Network Stabilized Ferroelectric Liquid Crystals

2001

Comparative Acoustic and Contact Studies of Elasticity of Ferroelectric LixNa1 - xTa0.1Nb0.9O3Solid Solutions at Nanometer Spatial Resolution

2009

Comparative acoustic and contact studies of elastic properties of the Li x Na 1−x Ta 0.1 Nb 0.9 O 3 (x = 0.015–0.135) ferroelectric solid solution ceramics are reported. A good agreement is obtained between the values of elastic modules determined by acoustic and contact methods at nano-scale spatial resolution.

Relaxor ferroelectric ceramics of LiTaO3-type

1992

Abstract A ferroelectric relaxation has been identified in Li1-xCax (Ta1-xZrx)O3(x = 0.15 and 0.20) ceramics with LiTaO3-type structure. The relaxation frequency fr is minimum and the dispersion step (ϵ′S - ϵ′∞) is maximum at TC. When x increases, a higher conductivity associated with a lower activation energy and a decrease of the magnitude of fr at Tc are observed, while the unit cell volume becomes larger, TC lower and the transition more diffuse.

The depolarization field effect on the thin ferroelectric films properties

2002

Abstract The calculation of the spontaneous polarization (Ps), dielectric susceptibility (χ) and pyroelectric coefficient (Π) of the ferroelectric films has been performed in the phenomenological theory framework. Euler–Lagrange equation was solved analytically under the boundary conditions with different extrapolation lengths at two surfaces, respectively. The depolarization field contribution was taken into account in the model of short-circuited mono domain ferroelectric film, treated as perfect insulator. The detailed analysis of the aforementioned quantities’ space distribution and their average values in two cases with and without depolarization field was carried out. It was shown tha…

Ferroelectric Behavior in Epitaxial Films of Relaxor PbMg1/3Nb2/3O3

2004

The nonlinear dielectric response of epitaxial thin films of relaxor ferroelectric PbMg1/3Nb2/3O3 was experimentally studied using digital Fourier analysis. Change from glass-like to ferroelectric behavior was detected in a broad temperature range, at relatively low ac and/or dc electric fields, and at a time scale of seconds. The presence of interfaces and peculiar microstructure of thin films are suggested to determine such a specific behavior.