Search results for "flash-muistit"
showing 3 items of 3 documents
Single-event effects of space and atmospheric radiation on memory components
2017
Electronic memories are ubiquitous components in electronic systems: they are used to store data, and can be found in all manner of industrial, automotive, aerospace, telecommunication and entertainment systems. Memory technology has seen a constant evolution since the first practical dynamic Random- Access Memories (dynamic RAMs) were created in the late 60's. The demand for ever-increasing performance and capacity and decrease in power consumption was met thanks to a steady miniaturization of the component features: modern memory devices include elements barely a few tens of atomic layers thick and a few hundred of atomic layers wide. The side effect of this constant miniaturization was a…
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells
2017
Floating gate cells in advanced NAND Flash memories, with single-level and multi-level cell architecture, were exposed to low-energy proton beams. The first experimental evidence of single event upsets by proton direct ionization in floating gate cells is reported. The dependence of the error rate versus proton energy is analyzed in a wide energy range. Proton direct ionization events are studied and energy loss in the overlayers is discussed. The threshold LET for floating gate errors in multi-level and single-level cell devices is modeled and technology scaling trends are analyzed, also discussing the impact of the particle track size. peerReviewed