Search results for "hardening"
showing 10 items of 133 documents
Uniaxial stress dependence of the dielectric and ferroelectric properties of the Na0.5K0.5NbO3and Na0.5K0.5NbO3 + 0.5 mol%MnO2ceramics
2013
Na0.5K0.5NbO3 and Na0.5K0.5NbO3 + 0.5 mol%MnO2 lead-free ceramics have been produced by solid phase hot pressing sintering process at 1120–1145°C. The results of the X-ray diffraction measurements showed that the obtained samples possessed a perovskite structure. The micrograph of the fractured surface showed a dense ceramic structure, in compliance with 93% relative density determined by the Archimedes method. The dependence of dielectric and ferroelectric properties on the uniaxial compressive stress (0–3000 bar) of the Na0.5K0.5NbO3 and Na0.5K0.5NbO3 + 0.5 mol%MnO2 ceramics was investigated. Significant influence of the external stress on these properties was revealed. It includes a shif…
Influence of Compressive Stress on Dielectric and Ferroelectric Properties of the Na0. 5K0.5NbO3, Na0.5K0.5(Nb0.94Sb0.06)O3and Na0.5K0.5(Nb0.94Sb0.06…
2013
Good quality lead-free ceramics of Na0.5K0.5NbO3, Na0.5K0.5(Nb0.94Sb0.06)O3 and Na0.5K0.5(Nb0.94Sb0.06)O3 +0.5mol%MnO2 have been produced by a solid phase hot pressing sintering process at 1120–1145°C. The dependence of dielectric and ferroelectric properties on the uniaxial pressure (0–3000 bar) of the these samples was investigated, revealing a significant influence of the external stress on their properties. This includes a shift of the phase transition, a diffuseness of the permittivity characteristics, a change of the dielectric dispersion and a decrease of the polarization. We discuss our results based on hardening of the soft-mode and domain switching processes under applying of pres…
Experimental and Theoretical Study of Bi2O2Se Under Compression
2018
[EN] We report a joint experimental and theoretical study of the structural, vibrational, elastic, optical, and electronic properties of the layered high-mobility semiconductor Bi2O2Se at high pressure. A good agreement between experiments and ab initio calculations is observed for the equation of state, the pressure coefficients of the Raman-active modes and the bandgap of the material. In particular, a detailed description of the vibrational properties is provided. Unlike other Sillen-type compounds which undergo a tetragonal to collapsed tetragonal pressure-induced phase transition at relatively low pressures, Bi2O2Se shows a remarkable structural stability up to 30 GPa; however, our res…
Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
2020
Journal of Instrumentation 15(02), P02005 (2020). doi:10.1088/1748-0221/15/02/P02005
AGingaObservation of the X‐Ray Pulsar 4U 0352+30
1996
4U 0352 + 30 (X Persei) is a low-luminosity binary X-ray pulsar with a pulse period of 835 s. We present timing and spectral analysis of a Ginga observation of X Persei from 1990 January 26 to January 29. The observation shows the peculiar spectral behavior of X Persei: the pulse-averaged hardness ratio exhibits a sharp hardening episode at phase minimum of the light curve. In order to explain the shape of the observed hardness ratio, we discuss the possible geometry of the emitting region. Simple models of fan emission from a hollow accretion column can reproduce the qualitative features of the observed light curve and hardness ratio.
MALTA: a CMOS pixel sensor with asynchronous readout for the ATLAS High-Luminosity upgrade
2018
Radiation hard silicon sensors are required for the upgrade of the ATLAS tracking detector for the High- Luminosity Large Hadron Collider (HL-LHC) at CERN. A process modification in a standard 0.18 μm CMOS imaging technology combines small, low-capacitance electrodes (∼2 fF for the sensor) with a fully depleted active sensor volume. This results in a radiation hardness promising to meet the requirements of the ATLAS ITk outer pixel layers (1.5 × 1015 neq /cm2 ), and allows to achieve a high signal-to-noise ratio and fast signal response, as required by the HL-LHC 25 ns bunch crossing structure. The radiation hardness of the charge collection to Non-Ionizing Energy Loss (NIEL) has been previ…
Recent results from the ATLAS SCT irradiation programme
2000
Abstract The irradiation facility at the CERN proton synchrotron, set up to irradiate full-size prototypes of silicon microstrip detectors for the ATLAS semiconductor tracker, is described and measurements of the detector currents during irradiation are reported. The detector dark currents can be described by bulk radiation damage models demonstrating the radiation hardness of the detector design and allowing the current damage factor α and the acceptor introduction term β to be determined. Results from testbeam studies of a module with an irradiated detector and binary readout in a magnetic field and with the beam incident over a range of angles are reported. The hit efficiency and spatial…
Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons
2004
Abstract We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.
Particle detectors made of high-resistivity Czochralski silicon
2005
We have processed pin-diodes and strip detectors on n- and p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900 O cm and 1.9 kO cm for n- and p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit fabrication. This is optimal for semiconductor fabrication as well as for radiation hardness. The radiation hardness of devices has been investigated with several irradiation campaigns including low- and high-energy protons, neutrons, g-rays, lithium ions and electrons. Cz-Si was found to be more…
Resolution changes of MCP-PMTs in magnetic fields
2016
Micro-channel plate photomultiplier tubes (MCP-PMTs) are chosen in many applications that have to cope with strong magnetic fields. The DIRC detectors of the PANDA experiment plan to employ them as they show excellent timing characteristics, radiation hardness, relatively low dark count rates and sufficient lifetime. This article mainly focuses on the performance of the position reconstruction of detected photons. Two different MCP-PMTs with segmented anode geometries have been tested in magnetic fields of different strengths. The variation of their performance has been studied. The measurements show improved position resolution and image shifts with increasing magnetic field strength.