Search results for "heterostructures"
showing 10 items of 20 documents
Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes
2019
We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…
Enhanced NiO Dispersion on a High Surface Area Pillared Heterostructure Covered by Niobium Leads to Optimal Behaviour in the Oxidative Dehydrogenatio…
2020
[EN] A Nb-containing siliceous porous clay heterostructure (PCH) with Nb contents from 0 to 30 wt %) was prepared from a bentonite and used as support in the preparation of supported NiO catalysts with NiO loading from 15 to 80 wt %. Supports and NiO-containing catalysts were characterised by several physicochemical techniques and tested in the oxidative dehydrogenation (ODH) of ethane. The characterisation studies on Nb-containing supports showed the presence of well-anchored Nb(5+)species without the formation of Nb(2)O(5)crystals. High dispersion of nickel oxide with low crystallinity was observed for the Nb-containing PCH supports. In addition, when NiO is supported on these Nb-containi…
Mapping an electron wave function by a local electron scattering probe
2015
A technique is developed which allows for the detailed mapping of the electronic wave function in two-dimensional electron gases with low-temperature mobilities up to $15\times {10}^{6}\;{\mathrm{cm}}^{2}\;{{\rm{V}}}^{-1}\;{{\rm{s}}}^{-1}$. Thin ('delta') layers of aluminium are placed into the regions where the electrons reside. This causes electron scattering which depends very locally on the amplitude of the electron wave function at the position of the Al δ-layer. By changing the distance of this layer from the interface we map the shape of the wave function perpendicular to the interface. Despite having a profound effect on the electron mobiliy, the δ-layers do not cause a widening of …
Effect of Confinement and Coulomb Interactions on the Electronic Structure of the (111) LaAlO3/SrTiO3 Interface
2023
A tight binding supercell approach is used for the calculation of the electronic structure of the (111) LaAlO3/SrTiO3 interface. The confinement potential at the interface is evaluated solving a discrete Poisson equation by means of an iterative method. In addition to the effect of the confinement, local Hubbard electron–electron terms are included at the mean-field level within a fully self-consistent procedure. The calculation carefully describes how the two-dimensional electron gas arises from the quantum confinement of electrons near the interface due to the band bending potential. The resulting electronic sub-bands and Fermi surfaces show full agreement with the electronic structure de…
Nickel oxide supported on porous clay heterostructures as selective catalysts for the oxidative dehydrogenation of ethane
2016
[EN] Porous clay heterostructures (PCH) have shown to be highly efficient supports for nickel oxide in the oxidative dehydrogenation of ethane. Thus NiO supported on silica with a PCH structure shows productivity towards ethylene three times higher than if NiO is supported on a conventional silica. This enhanced productivity is due to the increase in the catalytic activity and especially to the drastic increase in the selectivity to ethylene. Additionally, PCH silica partially modified with titanium in the columns (PCH-Ti) have also been synthesized and used as supports for NiO. An enhanced activity and selectivity to ethylene was found over NiO supported over PCH-Ti compared to the corresp…
Determination of defect content and defect profile in semiconductor heterostructures
2011
In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
2018
This paper reports on the modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures, studied by means of Transmission Line Model (TLM) structures, morphological and structural analyses, as well as computer simulations. In particular, the contacts exhibited an Ohmic behaviour after annealing at 800 degrees C, with a specific contact resistance rho(c) = (2.4 +/- 0.2) x 10(-5) Omega cm(2), which was associated to morphological and structural changes of both the metal layer and the interface. Interestingly, TLM analyses gave a value of the sheet resistance under the contact (R-SK = 26.1 +/- 5.0 Omega/rectangle) significantly lower than that measured out…
Out-of-plane transport of 1T-TaS2/graphene-based van der Waals heterostructures
2021
Due to their anisotropy, layered materials are excellent candidates for studying the interplay between the in-plane and out-of-plane entanglement in strongly correlated systems. A relevant example is provided by 1T-TaS2, which exhibits a multifaceted electronic and magnetic scenario due to the existence of several charge density wave (CDW) configurations. It includes quantum hidden phases, superconductivity and exotic quantum spin liquid (QSL) states, which are highly dependent on the out-of-plane stacking of the CDW. In this system, the interlayer stacking of the CDW is crucial for the interpretation of the underlying electronic and magnetic phase diagram. Here, thin-layers of 1T-TaS2 are …
High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition
2019
We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$\sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$\sim120000cm^2 V^{-1} s^{-1}$ at 9K. These are over twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room temperature mobilities$\sim30000 cm^2 V^{-1} s^{-1}$. These …
Facile synthesis of magnetically separable CoFe2O4/Ag2O/Ag2CO3 nanoheterostructures with high photocatalytic performance under visible light and enha…
2017
Riga Technical University supported the preparation of this manuscript from the Scientific Research Project Competition for Young Researchers No. ZP-2016/7. The authors wish to kindly acknowledge the financial support of HZB, Estonian Research Council (PUT1096, PUT735 and IUT2-25) and Estonian Centre of Excellence in Research Project “Advanced materials and high-technology devices for sustain-able energetics, sensorics and nanoelectronics” TK141 (2014–2020.4.01.15-0011).