Search results for "impur"
showing 10 items of 349 documents
<title>Formation of deep acceptor centers in AlGaN alloys</title>
2008
AlGaN alloy thin film materials are of high interest for light emitting diodes (LED of the ultraviolet (UV) spectral region. Origin of the deep intrinsic and impurity Si states in the AlxGa1-xN (0 < x < 0.35) epilayer structures grown by metalorganic chemical vapor deposition (MOCVD) technique have been considered. Effects of the lattice mismatch and Si-doping in the heterostructures of epilayers with different alloy composition are investigated using time resolved photoluminescence (PL) of donor – deep acceptor (DA) pairs. It is shown that the undoped AlGaN alloys, grown on a GaN buffer layer, due to the lattice mismatch contain the increased concentration of cation vacancy (Vcation) defec…
Photoluminescence and diffusion properties of O2 molecules in amorphous SiO2 nanoparticles
2013
An experimental study by Raman and Photoluminescence (PL) spectroscopies on the emission and diffusion properties of O2 molecules in amorphous SiO2 nanoparticles of commercial origin with diameters from 14 to 40 nm is reported. Stationary and time resolved PL measurements have been carried out to characterize the Near Infrared (NIR) emission at 1272 nm of O2. Emission features similar to those of bulk silica systems with a sharp PL band and excitation channels in the NIR, at 1070 nm, and in the visible, at 765 and 690 nm are found, with peculiarities arising from embedding O2 in nanostructures. The study of the NIR PL lifetime as a function of temperature down to 10 K enabled to reveal the …
Optical properties of phosphorous-related point defects in silica fiber preforms
2009
Physical review / B 80, 205208 (2009). doi:10.1103/PhysRevB.80.205208
Recombination luminescence of oxygen-deficient centers in silica
2008
Abstract The luminescence of silica glass, prepared by plasma chemical vapor deposition (PCVD) and quartz glass of type IV (trade mark KS-4V) methods, were studied while irradiated with pulses of ArF laser (193 nm) light in the range of sample temperatures between 10 and 300 K. The samples contain less than 0.1 ppm metallic and hydroxyl impurities. The samples synthesized by PCVD were of two kinds. The first one (amorphous) was as-deposited from plasma at a substrate tube temperature of ∼1200 °C. The second one (fused) was prepared from the first by the tube collapsing with an external burner. In this process, a section of the substrate tube with the deposited glass was installed in a lathe…
Luminescence study of defects in synthetic as-grown and HPHT diamonds compared to natural diamonds
2005
The optically active defects in as-grown, high-pressure high-temperature-treated (HPHT), boron-doped, and synthetic diamonds (SD) grown with a nitrogen-getter, as well as of natural diamonds (ND), were characterized by absorption and luminescence spectroscopies using different excitation sources. The laser-excited photoluminescence (PL) spectra of SDs show numerous sharp lines characteristic for nickel-related centers, whereas NDs yield mainly broad PL bands. The emission from the nickel-related defects in NIR range increases and the maxima of the bands shift to lower energies with increasing temperature. Under UV and electron beam excitation, the yellow synthetic diamonds display green lum…
Transport properties of silicon doped n-indium selenide
1992
Hall effect and resistivity measurements in silicon doped indium selenide (InSe), from 7K to 500K, are reported. Results are interpreted through a model, previously proposed for tin doped InSe, that takes into account the contribution of both three- and two-dimensional electrons to charge transport along the layers in InSe.
Influence of dissipative tunneling on the photodielectric effect associated with the excitation of impurity complexes A+ + e in a quasi-zero-dimensio…
2022
Effect of tunneling decay for the quasi-stationary A+-state, in an impurity complex A+ + e (a hole, localized on a neutral acceptor, interacting with an electron, localized in the ground state of a quantum dot) on the photodielectric effect, associated with the excitation of impurity complexes A+ + e in a quasi-zero-dimensional structure, has been studied in the zero-radius potential model in the one-instanton approximation. Calculation of the binding energy of a hole in an impurity complex A+ + e was performed in the zero radius potential model in the adiabatic approximation. It is shown that as the probability of dissipative tunneling increases, the binding energy of a hole in a complex A…
Level statistics and Anderson delocalization in two-dimensional granular materials
2020
Contrary to the theoretical predictions that all waves in two-dimensional disordered materials are localized, Anderson localization is observed only for sufficiently high frequencies in an isotropically jammed two-dimensional disordered granular packing of photoelastic disks. More specifically, we have performed an experiment in analyzing the level statistics of normal mode vibrations. We observe delocalized modes in the low-frequency boson-peak regime and localized modes in the high frequency regime with the crossover frequency just below the Debye frequency. We find that the level-distance distribution obeys Gaussian-Orthogonal-Ensemble (GOE) statistics, i.e. Wigner-Dyson distribution, in…
Spatial multifractal properties of wave packets in the Anderson model of localization.
1993
The multifractal properties of electronic wave functions in disordered samples are investigated. In a given energy range all eigenstates are determined for the same disorder configuration in the Anderson model of localization. It is shown that the singularity spectrum and the generalized dimensions change only slowly with energy, aside from statistical fluctuations. More important, the wave packet constructed by linear combination of the eigenstates shows quantitatively the same multifractal properties. Consequences for the transport properties of electronic states in disordered systems are discussed.
Correlation effects in the total energy, the bulk modulus, and the lattice constant of a transition metal: Combined local-density approximation and d…
2009
We present an accurate implementation of total-energy calculations into the local-density approximation plus dynamical mean-field theory $(\text{LDA}+\text{DMFT})$ method. The electronic structure problem is solved through the full-potential linear muffin-tin orbital and Korringa-Kohn-Rostoker methods with a perturbative solver for the effective impurity suitable for moderately correlated systems. We have tested the method in detail for the case of Ni, and investigated the sensitivity of the results to the computational scheme and to the complete self-consistency. It is demonstrated that the $\text{LDA}+\text{DMFT}$ method can resolve a long-standing controversy between the LDA/generalized …