Search results for "impur"
showing 10 items of 349 documents
Photo- and thermostimulated processes in α-Al2O3
1995
Abstract We reported on the recombination processes determined by the release of electrons from defects connected with the dosimetric 430 K thermostimulated luminescence (TSL) peak as well as with the 260 K TSL peak. These TSL peaks appear in thermochemically reduced α-Al 2 O 3 crystals containing hydrogen and emission of these TSL peaks corresponds to luminescence of the F-center. The X-ray exposure or UV excitation in the absorption band of F-centers at 6.0 eV of reduced α-Al 2 O 3 crystals doped with acceptor impurities results in the appearance of a broad anisotropic complex absorption band in the spectral region 2.5–3.5 eV and in the appearance of a predominant TSL peak at 430 K. Above…
Mollwo–Ivey relations for optical absorption bands of the atomic and F′ centres in alkali halides
2001
Evidence indicates that two classes of the transient IR-absorption bands: (a) with maxima at 0.27-0.36 eV in NaCI, KCI, KBr, KI and RbCl and due to shallow electron traps or bound polarons according to Jacobs (Phys. Stat. Sol. B 129 (1985) 755) and Korovkin and Lebedkina (Fiz. Tverd. Tela (Russian) 35 (1993) 642), and (b) with maxima at 0.15-0.36 eV in NaI, NaBr, NaCl : I, KCl : I I, RbCl: I and RbBr : I, due to on-centre STE localised at iodine-dimer according to Hirota et al. (J. Phys. Soc. Japan 63 (1994) 2774, Phys. Rev. B 52 (1995) 7779) and Edamatsu and Hirai (Mater. Sci. Forum 239-241 (1997) 525), are caused by the same defect. We propose that the defect is an atomic alkali impurity …
Fast determination of impurities in metallurgical grade silicon for photovoltaics by instrumental neutron activation analysis
2010
Standard wafer solar cells are made of near-semiconductor quality silicon. This high quality material makes up a significant part of the total costs of a solar module. Therefore, new concepts with less expensive so called solar grade silicon directly based on physiochemically upgraded metallurgical grade silicon are investigated. Metallurgical grade silicon contains large amounts of impurities, mainly transition metals like Fe, Cr, Mn, and Co, which degrade the minority carrier lifetime and thus the solar cell efficiency. A major reduction of the transition metal content occurs during the unidirectional crystallization due to the low segregation coefficient between the solid and liquid phas…
Photoluminescence of neodymium and erbium doped NaLaF4 material
2013
Abstract In the course of this research several NaLaF 4 samples doped with different Er 3+ and Nd 3+ concentrations have been synthesized. For these samples photoluminescence spectra, kinetics and excitation spectra have been measured. It has been found that when samples containing Nd 3+ and Er 3+ impurities are excited in specific Nd 3+ bands not only Nd 3+ but also Er 3+ luminescence bands appear. The studies of the decay kinetics show that there is an energy transfer from Nd 3+ to Er 3+ , moreover “green” and “red” Er 3+ luminescence bands appear as result of two different energy transfer mechanisms. In addition, photoluminescence processes in Nd 3+ ions are investigated. Based on the ob…
EPR Studies of Atomic Impurities in Rare Gas Matrices
2003
In this article we give an overview of the matrix isolation technique combined with electron paramagnetic resonance (EPR) detection for embedded atomic impurities in solid rare gases. A special emphasis is put on impurity – matrix coupling effects combining both experimental and theoretical approaches.
A simple analysis of the HA centre destruction temperatures for doped alkali halides
1998
Abstract A simple relation for the destruction temperatures Td of the HA centres (H centres trapped by an impurity cation) as a function of the difference in the radii for a host cation and impurity in alkali halide crystals is presented and theoretically justified. This relation allows to predict Td for H centres trapped by other monovalent cation impurities.
Analysis of metallic impurity content by means of VUV and SXR diagnostics in hybrid discharges with hot-spots on the JET-ITER-like wall poloidal limi…
2019
In preparation for the upcoming JET D-T campaign, great effort has been devoted during the 2015-2016 JET campaigns with the ITER-like wall (ILW) to the extension of the high performance H-mode phase in baseline and hybrid scenarios. Hybrid discharges were the only ones that have been stopped by the real-time vessel protection system due hot-spot formation on the outboard poloidal limiter. Generation of hot-spots was linked to the application of high neutral beams injection and ion cyclotron resonance heating (ICRH) power. In tokamaks with high-Z plasma components, the use of ICRH heating is also accompanied by an increased metallic impurity content. Simultaneous control of hot-spot temperat…
Tunable Polarons in Bose-Einstein Condensates
2017
A toolbox for the quantum simulation of polarons in ultracold atoms is presented. Motivated by the impressive experimental advances in the area of ultracold atomic mixtures, we theoretically study the problem of ultracold atomic impurities immersed in a Bose-Einstein condensate mixture (BEC). The coupling between impurity and BEC gives rise to the formation of polarons whose mutual interaction can be effectively tuned using an external laser driving a quasi-resonant Raman transition between the BEC components. Our scheme allows one to change the effective interactions between polarons in different sites from attractive to zero. This is achieved by simply changing the intensity and the frequ…
Luminescence spectra and decay kinetics in ZnWO4 and CdWO4 crystals
2004
The luminescence spectra and luminescence decay kinetics in ZnWO4 (nominal pure and doped with Fe and Mo) under pulsed electron beam and pulsed nitrogen laser excitation have been investigated. It is suggested that the two-stage intrinsic luminescence decay observed under ionizing radiation excitation in ZnWO4 and CdWO4 was due to two different self-trapped exciton (STE) configurations in these crystals. The role of Fe and Mo impurities for scintillation efficiency in ZnWO4 and CdWO4 has been discussed. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Si self-diffusion in cubic B20-structured FeSi
2008
Self-diffusion of implanted 31Si in the e-phase FeSi (cubic B20-structure) has been determined in the temperature range 660–810 °C using the modified radiotracer technique. With an activation enthalpy of 2.30 eV and a pre-exponential factor of 15×10−8 m2 s−1 the silicon diffusivity was found to be slightly slower than Ge impurity diffusion in FeSi. This difference is proposed to originate from attractive elastic interactions prevailing between the slightly oversized Ge atoms and the Si sublattice vacancies. The results confirm the argument that 71Ge radioisotopes may be used to substitute the short-lived 31Si radiotracers when estimating self-diffusion in silicides.