Search results for "inform"
showing 10 items of 20464 documents
Multi-application Based Fault-Tolerant Network-on-Chip Design for Mesh Topology Using Reconfigurable Architecture
2019
In this paper, we propose a two-step fault-tolerant approach to address the faults occurred in cores. In the first stage, a Particle Swarm Optimization (PSO) based approach has been proposed for the fault-tolerant mapping of multiple applications on to the mesh based reconfigurable architecture by introducing spare cores and a heuristic has been proposed for the reconfiguration in the second stage. The proposed approach has been experimented by taking several benchmark applications into consideration. Communication cost comparisons have been carried out by taking the failed cores as user input and the experimental results show that our approach could get improvements in terms of communicati…
Space charge behavior of different insulating materials employed in AC and DC cable systems
2017
In this work, the space charge accumulation in three different XLPE based material has been carried out by using the PEA (Pulsed Electro-Acoustic) method. The specimens provided by a cables industry have been subjected to the same DC stress during polarization time at environment temperature. Afterwards, the high voltage generator has been turned off and the amount residual charge has been evaluated. The space charge profiles during polarization and depolarization have been carried out and compared. Finally, the distribution of electric field within the samples has been reported. In particular, the maximum distortion of electric field has been calculated by taking into account the distribut…
C-switches: Increasing switch radix with current integration scale
2011
In large switch-based interconnection networks, increasing the switch radix results in a decrease in the total number of network components, and consequently the overall cost of the network can be significantly reduced. Moreover, high-radix switches are an attractive option to improve the network performance in terms of latency, since hop count is also reduced. However, there are some problems related to the integration scale to design such single-chip switches. In this paper we discuss key issues and evaluate an interesting alternative for building high-radix switches going beyond the integration scale bounds. The idea basically consists in combining several current smaller single-chip swi…
Space charge accumulation in undersea HVDC cables as function of heat exchange conditions at the boundaries – water-air interface
2020
Transmission lines with undersea HVDC cables are an interesting technological solution for the supply of electrical energy to islands. The accumulation of space charge inside the dielectric layer of a HVDC cable is one of the most important element to consider in its design and during operation. The formation of space charge is due to various factors including the high dependence on the temperature of the electrical conductivity of the insulation and the establishment of a thermal gradient under load conditions. This research is focused on the space charge accumulation phenomenon around a section of a HVDC cable half dipped in water and half in air. Due to the high difference in thermal con…
Electromagnetic and Thermal Modelling for Calculating Ageing Rate of Distribution Transformers
2018
Prediction of the lifetime for transformers is very important for maintenance and asset management. Finite element analysis was performed on a 5 MVA distribution transformers with aluminium foil-type windings and voltage rating 6600 V/23000 V. Electromagnetic modelling is implemented on the full three-phase transformer to calculate distributed losses, taking the skin effect into account. To reduce the computational burden, the distributed losses in one phase are used to analyse temperature rise in one phase of the transformer. The temperature rise results were used to determine the ageing rate of the transformer. Further, the influence of ambient temperature and cooling on the temperature r…
Contributed Review: Review of thermal methods for space charge measurement.
2016
The space charge accumulation phenomenon has garnered great interest over the last two decades because of the increased use of direct current in high voltage electrical systems. In this context, a significant relevance has been achieved by the thermal methods, used for solid dielectrics. This paper presents a review of this non-destructive measurement system used for the measurement of space charge. The thermal pulse method, the thermal step method, and the laser intensity modulation method are described. For each configuration, the principle of operation, the thicknesses analyzed, and the spatial resolution are described, reporting also the main related applications
Optimization of physicochemical and optical properties of nanocrystalline TiO 2 deposited on porous silicon by metal-organic chemical vapor depositio…
2020
International audience; Titanium dioxide (TiO2) is very employed in solar cells due to its interesting physicochemical and optical properties allowing high device performances. Considering the extension of applications in nanotechnologies, nanocrystalline TiO2 is very promising for nanoscale components. In this work, nanocrystalline TiO2 thin films were successfully deposited on porous silicon (PSi) by metal organic chemical vapor deposition (MOCVD) technique at temperature of 550°C for different periods of times: 5, 10 and 15 min. The objective was to optimize the physicochemical and optical properties of the TiO2/PSi films dedicated for photovoltaic application. The structural, morphologi…
Temperature Dependent Suns-V<inf>oc</inf> of Multicrystalline Silicon Solar Cells from Different Ingot Positions
2018
This paper presents temperature dependent Suns- Voc measurements on multicrystalline silicon cells originating from different ingot positions. The effective lifetime is found to increase for all cells when the temperature is increased from 25°C to 6°C. However, cells from the top of the ingot show a considerably larger increas 40–50% for illumination conditions of 0.1-1 Sun, compared to an increase of 20-30% observed for cells from the bottom. The decrease in Voc with increasing temperature is found to be lower for cells from the top of the ingot compared to cells from the bottom. The temperature coefficient of the Voc is found to vary 5% along the ingot at 1 Sun, highlighting the influence…
SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark
2019
Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…