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showing 10 items of 38021 documents
ABSOLUTE THERMOELECTRIC POWER OF Pb–Sn ALLOYS
2011
International audience; In this work, absolute thermoelectric power (ATP) of Pb, Sn, Pb-20 wt.% Sn, Pb-40 wt.% Sn, Pb-60 wt.% Sn, Pb-80 wt.% Sn are measured. Measurements are performed in a temperature gradient furnace from 20 degrees C to 500 degrees C, for both solid and liquid states. Temperatures are measured with T-type copper-constantan thermocouples, while voltage signal between copper electrodes of those thermocouples is recorded in order to calculate ATP of the sample metal.
Flash annealing influence on structural and electrical properties of TiO2/TiO/Ti periodic multilayers
2014
Abstract Multilayered structures with a 40 nm period composed of titanium and two different titanium oxides, TiO and TiO 2 , were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. These multilayers were sputtered onto Al 2 O 3 sapphire to avoid substrate compound diffusion during flash annealing (ranging from 350 °C to 550 °C). Structure and composition of these periodic TiO 2 /TiO/Ti stacks were investigated by X-ray diffraction, X-ray photoemission spectroscopy and transmission electronic microscopy techniques. Two crystalline phases α-Ti and fcc-TiO were identified in the metallic-rich sub-layers whereas the oxygen-rich ones were composed of a mixture…
Structural, optical, and luminescence properties of ZnO:Ga optical scintillation ceramic
2018
This paper discusses the characteristics of ZnO and ZnO:Ga ceramics fabricated by uniaxial hot pressing. The short-wavelength transmission limit of zinc oxide ceramics is in the 370-nm region; the long-wavelength limit is determined by the free-charge-carrier concentration and lies in the interval from 5 to 9 μm. The total transmittance of such ceramics in the visible and near-IR regions is about 70% when the sample is 0.5 mm thick. The luminescence spectrum is represented by a broad emission band with maximum at 580 nm, having a defect nature. The introduction of 0.03–0.1 mass % gallium into the zinc oxide structure inhibits grain growth and increases the free-charge-carrier concentration …
New low-temperature phosphate glasses as a host for Europium Ions
2021
Abstract Artificial lightining, especially that of light emitting diodes, and telecommunications are penetrating every part of human lives daily. Different compositions phosphate glasses were suggested as a suitable host material for Eu3+ ions. Here rare earth metal ions act as luminescent centers also perturbing the bond order of phosphate glass network comprised of (PO4)3−, [−(O)PO3]2−, [−(O)2PO2]−, [−(O)3PO] structural units, which is indicated by Raman spectroscopy, confirming successful integration of aforementioned ions into the glass material. Glasses doped with Eu3+ ions show their typical photoluminescence spectra in low symmetry environment, consisting of the highest intensity 5D0…
Anomalies of dielectric properties and conductivity in single domain LiNbO3:Zn crystals
2016
ABSTRACTA study of the temperature dependence of dielectric constant, conductivity, and piezoelectric modulus in the single-domain state of LiNbO3 crystals modified by Zn admixture at threshold concentration is reported. Unipolarity of the LiNbO3:Zn crystals is observed to increase after treatment of brand-new samples by high-temperature electro-diffusion annealing and by subsequent high-temperature annealing of short-circuited samples. The observed effects are explained as a result of meta-stable residual domains collapsing at high temperature the collapse being assisted by disintegration of charged clusters stabilizing domain walls. The rise of unipolarity is accompanied by anomalies on t…
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
2019
Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.
An anomalous wave formation at the Al/Cu interface during magnetic pulse welding
2020
This paper reports an anomalous wave formation at an Al/Cu bimetallic interface produced by magnetic pulse welding. The mechanism of the anomalous wave formation is investigated using both metallurgical characterization and the interface kinematics. It reveals that the anomalous wave is formed with the combination of the intermediate zone and the interdiffusion zone with a thickness of 70 nm, wherein the intermediate zone is caused by the local melting due to the high shear instability, and the interdiffusion zone is formed below the melting point of aluminum combined with ultrahigh heating and cooling rates of about 10^13 °C s^−1. A multiphysics simulation of impact welding has been perfor…
The influence of Cr and Ni doping on the microstructure of oxygen containing diamond-like carbon films
2021
Abstract Non-hydrogenated diamond-like carbon (DLC) films doped with metals and oxygen were deposited by direct current magnetron sputtering. The influence of chromium and nickel on the surface morphology, elemental composition, bonding structure, adhesion force, optical transmittance and nanohardness of the films was characterized by atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDX), multi-wavelength Raman spectroscopy, UV–VIS–NIR spectrophotometry and nanoindenter. The surface roughness was reduced with the addition of Cr (7.4 at. %) or Ni (8.9 at. %) into DLC films. The EDX measurements indicated that the addition of Cr increased the oxygen content by ~37%, while …
The effects of the additive of Eu ions on elastic and electric properties of BaTiO3ceramics
2016
ABSTRACTThe BaTiO3 and BaTiO3+X%wt.Eu2O3 (X = 1, 2, 3) ceramics were prepared by a solid phase reaction. The structural and morphology studies were carried out by means of an X-ray diffraction technique and scanning electron microscopy, respectively. Elastic moduli were determined with the use of an ultrasonic method. The dielectric permittivity (ϵ′) and tanδ as a function of composition and temperature were investigated. The increasing concentration of Eu ions leads to a slight shift of the Curie temperature and changes the characteristics of ϵ′ and tanδ. The structural, mechanical and dielectric properties of the BTEX ceramics were discussed in terms of microstructure and dopants contents.
SrTiO3-doping effect on dielectric and ferroelectric behavior of Na0.5Bi0.5 TiO3 ceramics
2018
Lead-free (Na0.5Bi0.5)1-xSrxTiO3 ceramics (x = 0–0.04) were synthesized by a conventional mixed-oxide technique. The microstructure study showed a dense structure, in good agreement with that of ab...