Search results for "laser"
showing 10 items of 3161 documents
Study of silica-based intrinsically emitting nanoparticles produced by an excimer laser
2019
International audience; We report an experimental study demonstrating the feasibility to produce both pure and Ge-doped silica nanoparticles (size ranging from tens up to hundreds of nanometers) using nanosecond pulsed KrF laser ablation of bulk glass. In particular, pure silica nanoparticles were produced using a laser pulse energy of 400 mJ on pure silica, whereas Ge-doped nanoparticles were obtained using 33 and 165 mJ per pulse on germanosilicate glass. The difference in the required energy is attributed to the Ge doping, which modifies the optical properties of the silica by facilitating energy absorption processes such as multiphoton absorption or by introducing absorbing point defect…
A Comparative Evaluation of Smear Layer Removal Using Apical Negative Pressure (EndoVac), Sonic Irrigation (EndoActivator) and Er:YAG laser -An In Vi…
2017
Background This study aimed to compare the smear layer removing efficacy of the EndoActivator, EndoVac and Er:YAG laser in extracted mandibular premolars, at the apical, middle and coronal third of root canal, through scanning electron microscopy. Material and methods 40 extracted mandibular premolars were decoronated to a standardized length of 12 mm. Specimens were shaped to ProTaper F4 size and irrigated with 5.25% sodium hypochlorite at 370C between instrumentation. Teeth were divided into four groups (n=10), one control (needle irrigation) and three experimental, according to the irrigant activation technique used i.e. sonic irrigation (EndoActivator), apical negative pressure (EndoVac…
Spectroscopic Properties of Holmium-Aluminum-Germanium Co-doped Silica Fiber
2020
We report the basic spectroscopic properties of a home-made holmium-aluminum-germanium co-doped silica fiber, designed for laser applications. We present the ground-state and excited-state absorpti...
UV-Laser Plasma Study of Elemental Distributions of Paper Coatings
1995
The potential of a laser-generated plasma method in the analysis of coating coverage, coatweight distribution, and 3D distribution of various pigments of paper coating is described. A XeCl-excimer laser (308 nm) was used to generate microscopic plasma from the paper coating, and delayed detection of silicon and calcium atomic emission line intensities was used as a measure of mass vaporized. Macroscopic areas typically 10 × 10 mm2 at a spatial resolution of 250 μm were studied. With a single laser pulse (0.2 mJ of energy), about 2 ng of coating from a volume of 30 μm in diameter and 2 μm in depth was vaporized. The method seems to be useful for characterization of multilayer coatings.
Properties of atomic layer deposited nanolaminates of zirconium and cobalt oxides
2018
Producción Científica
Laser-Fabricated Fluorescent, Ligand-Free Silicon Nanoparticles: Scale-up, Biosafety, and 3D Live Imaging of Zebrafish under Development
2022
This work rationalizes the scalable synthesis of ultrasmall, ligand-free silicon nanomaterials via liquid-phase pulsed laser ablation process using picosecond pulses at ultraviolet wavelengths. Results showed that the irradiation time drives hydrodynamic NP size. Isolated, monodisperse Si-NPs are obtained at high yield (72%) using post-treatment process. The obtained Si-NPs have an average size of 10 nm (not aggregated) and display photoemission in the green spectral range. We directly characterized the ligand-free Si-NPs in a vertebrate animal (zebrafish) and assessed their toxicity during the development. In vivo assay revealed that Si-NPs are found inside in all the early life stages of …
Luminescent silicon nanocrystals produced by near-infrared nanosecond pulsed laser ablation in water
2014
Abstract We report the investigation of luminescent nanoparticles produced by ns pulsed Nd:YAG laser ablation of silicon in water. Combined characterization by AFM and IR techniques proves that these nanoparticles have a mean size of ∼3 nm and a core–shell structure consisting of a Si-nanocrystal surrounded by an oxide layer. Time resolved luminescence spectra evidence visible and UV emissions; a band around 1.9 eV originates from Si-nanocrystals, while two bands centered at 2.7 eV and 4.4 eV are associated with oxygen deficient centers in the SiO 2 shell.
Character of the Reaction between Molecular Hydrogen and a Silicon Dangling Bond in Amorphous SiO2
2007
The passivation by diffusing H2 of silicon dangling bond defects (E′ centers, O3tSi•) induced by laser irradiation in amorphous SiO2 (silica) is investigated in situ at several temperatures. It is found that the reaction between the E′ center and H2 requires an activation energy of 0.39 eV and that its kinetics is not diffusionlimited. The results are compared with previous findings on the other fundamental paramagnetic point defect in silica, the oxygen dangling bond, which features completely different reaction properties with H2. Furthermore, a comparison is proposed with literature data on the reaction properties of surface E′ centers, of E′ centers embedded in silica films, and with th…
Fabrication of superconducting tantalum nitride thin films using infra-red pulsed laser deposition
2013
We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on oxidized silicon (SiO$_{2} $) substrates exhibited a superconducting transition temperature of $\sim $ 8 K and 6 K, respectively. The topography of these films were investigated using atomic force and scanning electron microscopy, revealing fairly large area particulate free and smooth surfaces, while the structure of the films were investigated using standard $ \theta -2 \theta $ and glancing angle X-ray diffraction techniques. For films grown on MgO a fa…
Changes in Amorphous Hydrogenated Carbon Films by Ultraviolet and Infrared Laser Irradiation
2013
Amorphous hydrogenated carbon lms were formed on the Si (100) wafers by a direct-ion beam deposition method from pure acetylene and acetylene hydrogen gas mixtures. The lms were irradiated with a nanosecond Nd:YAG laser working at the rst harmonics (λ1 = 1064 nm), the fourth harmonics (λ4 = 266 nm) or with a Nd:YVO4 laser working at the third harmonic (λ3 = 355 nm). The lms were studied by the Raman scattering, micro-Fourier transform infrared and Fourier transform infrared spectroscopies, null-ellipsometry, optical and scanning electron microscope, and Vickers hardness method. Irradiation by the wavelength λ1 = 1064 nm leads to graphitization and formation of the silicon carbide, because o…