Search results for "layer"
showing 10 items of 2667 documents
Layer-by-Layer Graphene Growth on β-SiC/Si(001)
2019
ACS nano 13(1), 526 - 535 (2019). doi:10.1021/acsnano.8b07237
Investigation of electron transfer between single plasmon and graphene by dark field spectroscopy
2020
Abstract We investigated the electron transfer time between single plasmonic gold nanoparticles and graphene with our home-build spectral imaging dark-field microscope. The process of electron transfer is supposed to be shuttling of hot electrons on the nanoparticle-graphene interface, resulting in a slight broadening of the scattering spectrum. For detecting the minor spectrum broadening, we firstly characterized our setup systematically and then calibrated its intrinsic error. We found the mechanism of a common but normally neglected setup error, scattering spectrum broadening, which is caused by the bandwidth of the incident light and could exist in most fast dark-field microscopy setups…
Functionalisation of MoS2 2D layers with diarylethene molecules
2021
Functionalisation of two dimensional (2D) materials with stimuli-responsive molecules has been scarcely investigated. Here, MoS2 layers obtained by chemical exfoliation are covalently and non-covalently functionalised using two photoswitchable diarylethene derivatives under their open- and closed-ring isomers. The choice of these light-responsive molecules is based on their excellent thermal irreversibility and fatigue resistance. The characterisation of the resultant molecular/2D heterostructures proves the successful anchoring of the molecules by both approaches as well as the influence that the driving interaction has in the photoswitching behaviour of the diarylethene isomers after thei…
Submicrometer-Sized Roughness Suppresses Bacteria Adhesion.
2020
Biofilm formation is most commonly combatted with antibiotics or biocides. However, proven toxicity and increasing resistance of bacteria increase the need for alternative strategies to prevent adhesion of bacteria to surfaces. Chemical modification of the surfaces by tethering of functional polymer brushes or films provides a route toward antifouling coatings. Furthermore, nanorough or superhydrophobic surfaces can delay biofilm formation. Here we show that submicrometer-sized roughness can outweigh surface chemistry by testing the adhesion of E. coli to surfaces of different topography and wettability over long exposure times (>7 days). Gram-negative and positive bacterial strains are tes…
The co-reactant role during plasma enhanced atomic layer deposition of palladium
2020
Atomic layer deposition (ALD) of noble metals is an attractive technology potentially applied in nanoelectronics and catalysis. Unlike the combustion-like mechanism shown by other noble metal ALD processes, the main palladium (Pd) ALD process using palladium(ii)hexafluoroacetylacetonate [Pd(hfac)2] as precursor is based on true reducing surface chemistry. In this work, a thorough investigation of plasma-enhanced Pd ALD is carried out by employing this precursor with different plasmas (H2*, NH3*, O2*) and plasma sequences (H2* + O2*, O2* + H2*) as co-reactants at varying temperatures, providing insights in the co-reactant and temperature dependence of the Pd growth per cycle (GPC). At all te…
Atomic Layer Deposition of Localized Boron- and Hydrogen-Doped Aluminum Oxide Using Trimethyl Borate as a Dopant Precursor
2020
Atomic layer deposition (ALD) of boron-containing films has been mainly studied for use in two-dimensional materials and for B doping of Si. Furthermore, lithium-containing borates show great promi...
The commensurate-incommensurate transition of hydrogen monolayers physisorbed on graphite
1987
We present a neutron diffraction study of the commensurate-incommensurate (C-IC) transition of hydrogen monolayers physisorbed on the basal planes of exfoliated graphite. It is shown that the solid intermediate phase detected by specific-heat measurements can be described in terms of a striped domain-wall phase with superheavy walls. Comparison with simple models with fixed domain sizes is made. The results are in agreement with recent LEED experiments of Cui and Fain and provide an experimental realization of C-IC transition theories.
Atomic layer deposition of ternary ruthenates by combining metalorganic precursors with RuO4 as the co-reactant
2022
In this work, the use of ruthenium tetroxide (RuO4) as a co-reactant for atomic layer deposition (ALD) is reported. The role of RuO4 as a co-reactant is twofold: it acts both as an oxidizing agent and as a Ru source. It is demonstrated that ALD of a ternary Ru-containing metal oxide (i.e. a metal ruthenate) can be achieved by combining a metalorganic precursor with RuO4 in a two-step process. RuO4 is proposed to combust the organic ligands of the adsorbed precursor molecules while also binding RuO2 to the surface. As a proof of concept two metal ruthenate processes are developed: one for aluminum ruthenate, by combining trimethylaluminum (TMA) with RuO4; and one for platinum ruthenate, by c…
Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
2011
Thermal properties of various silver precursors known in the literature were evaluated in order to discover which precursor is the most suitable one for plasma-enhanced atomic layer deposition (PEALD) of silver thin films. Ag(fod)(PEt3) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) was found to be the best choice. Using Ag(fod)(PEt3) together with plasma-activated hydrogen, silver thin films were deposited at growth temperatures of 120–150 °C, and ALD-type saturative growth was achieved at 120–140 °C. At 120 °C, the growth rate was 0.03 nm per cycle. The plasma exposure time had also an effect on the growth rate: with shorter exposure times, the growth rate was lower over…
Iridium metal and iridium oxide thin films grown by atomic layer deposition at low temperatures
2011
Atomic layer deposition (ALD) of both iridium and iridium oxide films at low temperatures has been studied and the resulting films have been examined by XRD, FESEM, XRR, EDX, AFM, TOF-ERDA, and four point probe measurements. Iridium oxide films were successfully grown using (MeCp)Ir(CHD) and ozone between 100 and 180 °C, however, the density of the films substantially reduced at 120 °C and below. The density reduction was accompanied by a phase change from crystalline to amorphous IrO2. Metallic iridium films were deposited between 120 and 180 °C by adding a reductive hydrogen pulse after the oxidative ozone pulse. Comparison of these processes with the earlier process employing the same Ir…