Search results for "layer"

Solution processed organic light-emitting diodes using a triazatruxene crosslinkable hole transporting material.

2018

A cross-linkable triazatruxene that leads to insoluble films upon thermal annealing at temperatures compatible with flexible substrates is presented. The films were used as the hole transporting and electron blocking layer in partially solution processed phosphorescent organic light-emitting diodes, reaching power conversion efficiencies of 24 lm W−1, an almost 50% improvement compared to the same OLEDs without the cross-linkable hole transporting layer.

An Investigation of the Thermal Effects in Orthogonal Cutting Associated with Multilayer Coatings

2001

Abstract This paper deals with an experimental and analytical investigation into the tool-chip interface behaviour, influencing the temperature and heat transfer at the multilayered coated-tool rake face during orthogonal cutting of carbon and stainless steels. New methodology for assessing the amount of thermal energy generated when machining with a coated tool insert with natural and restricted contact coupled with a metallic chip, using thermophysical properties of the sliding materials is developed in this study. It was proven, based on the heat flux analysis, that the use of advanced coatings with an intermediate Al 2 O 3 layer can substantially improve the heat flow into the chip at d…

Amphiphilic dyes for nonlinear optics: Dependence of second harmonic generation on functional group substitution

2008

Computer modelling of WGM microresonators with a zinc oxide nanolayer using COMSOL multiphysics software

2021

Whispering gallery mode resonators (WGMRs) are small axial symmetrical structures from transparent material, that can exceptionally well confine light within, thus making them ideal for studying light-matter interactions and using them as sensors. Various WGMR designs can be simulated using COMSOL Multiphysics. Sometimes an extra layer is coated on the surface of the resonator for achieving desirable effects. The extra layer changes quality factor of the resonator and ads extra modes for some frequencies. Different methods and studies are used for the exploration of this topic such as changing the thickness of the coating and using random functions to describe the roughness of the surface, …

Multilayer (Al,Ga)N Structures for Solar-Blind Detection

2004

We report on solar-blind metal-semiconductor-metal (MSM) detectors fabricated on stacks of (Al,Ga)N layers with different Al mole fraction. These structures were grown by molecular beam epitaxy on sapphire substrates to allow backside illumination and a low-temperature GaN buffer layer. They consist of a 0.3-0.4-/spl mu/m active layer grown on a thick (Al,Ga)N window layer (/spl ap/1 /spl mu/m) that is transparent at the wavelength of interest. Different Al contents were used in the window layer. We observed that, in general, samples with a high Al content were cracked, which is explained in terms of mechanical strain. MSM photodetectors fabricated on these samples showed large leakage curr…

Transparent conductive oxide photonic crystals on textured substrates

2011

Three-dimensional ZnO:Al photonic crystals were fabricated by atomic layer deposition on highly textured substrates. It turns out that these inverted opals consist of a thin intermediate disordered layer close to the textured substrate followed by a highly-ordered photonic crystal layer. The photonic crystals themselves exhibit comparable optical properties to those on planar substrates.

Optical and Vibrational Properties of Self-assembled GaN Quantum Dots

2008

Publisher Summary This chapter describes quantum dots (QDs) based on group III nitrides (III-N). They are expected to be the active medium of new optoelectronic devices operating at high powers and high temperatures. Besides the well-known advantages of their bulk and quantum well (QW) counterparts, III-N QDs provide strong confinement of carriers in nearly perfect zero-dimensional boxes. Quantum effects provide new degrees of freedom for the design of advanced devices. The chapter reviews the systems of dots that appear spontaneously during epitaxial growth without the need of artificial post-processing and designate them as self-assembled or self-organized QDs regardless of the mechanism …

Schottky barrier height tuning by Hybrid organic-inorganic multilayers

2014

ABSTRACTSemiconducting and insulating polymers and copolymers/Au nanograins based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal nanograins) to prepare Au/HyMLs/p-Si Schottky device. The electrical properties of the Au/HyMLs/p-Si Schottky device were investigated by current-voltage (I–V) measurements in the thickness range of 1-5 bilayers (BL).At different number of layers, current-voltage (I–V) measurements were performed. Results showed a rectifying behavior. Junction parame…

Photoemission of spinpolarized electrons from strained GaAsP

1996

Strained layer GaAs.95P.05 photo cathodes are presented, which emit electron beams spinpolarized to a degree of P = 75% typically. Quantum yields around QE = 0.4% are observed routinely. The figure of merit P2 × QE = 2.3 × 10−3 is comparable to that of the best strained layer cathodes reported in literature. The optimum wavelength of irradiating light around 830 nm is in convenient reach of Ti:sapphire lasers or diode lasers respectively. The cathodes are produced using MOCVD-techniques. A GaAs.55P.45-GaAs.85P.15 superlattice structure prevents the migration of dislocations from the substrate and bottom layers to the strained overlayer. The surface is protected by an arsenic layer so that n…

Photonic crystals based on two-layer opaline heterostructures

2002

AbstractOptical properties of several heterostructures representing two-layer opaline photonic crystals have been examined. Two separate stop-bands have been observed both in transmission and emission spectra. The effect of the interface disorder on the optical spectra was not observed, probably, due to the insufficient degree of order of the opaline layers.