Search results for "layer"
showing 10 items of 2667 documents
Low Temperature Growth of High Purity, Low Resistivity Copper Films by Atomic Layer Deposition
2011
The atomic layer deposition of copper metal thin films was achieved using a three precursor sequence entailing Cu(OCHMeCH2NMe2)2, formic acid, and hydrazine. A constant growth rate of 0.47−0.50 A/cycle was observed at growth temperatures between 100 and 170 °C. The resulting films are high purity and have low resistivities.
Influence of titanium-substrate roughness on Ca–P–O thin films grown by atomic layer deposition
2013
Abstract Amorphous Ca–P–O films were deposited on titanium substrates using atomic layer deposition, while maintaining a uniform Ca/P pulsing ratio of 6/1 with varying number of atomic layer deposition cycles starting from 10 up to 208. Prior to film deposition the titanium substrates were mechanically abraded using SiC abrasive paper of 600, 1200, 2000 grit size and polished with 3 μm diamond paste to obtain surface roughness R rms values of 0.31 μm, 0.26 μm, 0.16 μm, and 0.10 μm, respectively. The composition and film thickness of as-deposited amorphous films were studied using Time-Of-Flight Elastic Recoil Detection Analysis. The results showed that uniform films could be deposited on ro…
Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition
2015
ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). T…
Atomic layer deposition of ferroelectric LiNbO3
2013
The ferroelectric and electro-optical properties of LiNbO3 make it an important material for current and future applications. It has also been suggested as a possible lead-free replacement for present PZT-devices. The atomic layer deposition (ALD) technique offers controlled deposition of films at an industrial scale and thus becomes an interesting tool for growth of LiNbO3. We here report on ALD deposition of LiNbO3 using lithium silylamide and niobium ethoxide as precursors, thereby providing good control of cation stoichiometry and films with low impurity levels of silicon. The deposited films are shown to be ferroelectric and their crystalline orientations can be guided by the choice of…
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
2012
The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film remova…
Stabilizing organic photocathodes by low-temperature atomic layer deposition of TiO2
2017
Organic semiconductor light absorbers are receiving attention for their potential application in photoelectrochemical (PEC) cells for renewable fuels generation. Key to their advancement is precise control of the interfaces between charge-selective contacts, absorber layers, and electrocatalysts, while maintaining compatibility with an aqueous electrolyte environment. Here we demonstrate a new process for low-temperature atomic layer deposition (ALD) of TiO2 onto a P3HT:PCBM polymer blend surface for stable high-performance organic PEC photocathodes. This ALD TiO2 layer provides three key functions: (1) formation of an electron-selective contact to the polymer to enable photovoltage and pho…
Aluminum oxide from trimethylaluminum and water by atomic layer deposition:The temperature dependence of residual stress, elastic modulus, hardness a…
2014
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD enables conformal growth on 3-dimensional structures at relatively low temperatures. For MEMS device design and fabrication, the understanding of stress and mechanical properties such as elastic modulus, hardness and adhesion of thin film is crucial. In this work a comprehensive characterization of the stress, elastic modulus, hardness and adhesion of ALD aluminum oxide (Al2O3) films grown at 110-300 C from trimethylaluminum and water is presented. Film stress was analyzed by wafer curvature measurements, elastic modulus by nanoindentation and surface-acoustic wave measurements, hardness by na…
Navier-Stokes equations on an exterior circular domain: construction of the solution and the zero viscosity limit
1997
Abstract In this Note, we consider the limit of Navier-Stokes equations on a circular domain. By an explicit construction of the solution, it is proved that, when viscosity goes to zero, solution converges to the Euler solution outside the boundary layer and to the Prandtl solution inside the boundary layer.
Conflict resolution in the multi-stakeholder stepped spillway design under uncertainty by machine learning techniques
2021
Abstract The optimal spillway design is of great significance since these structures can reduce erosion downstream of the dams. This study proposes a risk-based optimization framework for a stepped spillway to achieve an economical design scenario with the minimum loss in hydraulic performance. Accordingly, the stepped spillway was simulated in the FLOW-3D® model, and the validated model was repeatedly performed for various geometric states. The results were used to form a Multilayer Perceptron artificial neural network (MLP-ANN) surrogate model. Then, a risk-based optimization model was formed by coupling the MLP-ANN and NSGA-II. The concept of conditional value at risk (CVaR) was utilized…
Numerical study of the transverse stability of the Peregrine solution
2020
We generalise a previously published approach based on a multi-domain spectral method on the whole real line in two ways: firstly, a fully explicit 4th order method for the time integration, based on a splitting scheme and an implicit Runge--Kutta method for the linear part, is presented. Secondly, the 1D code is combined with a Fourier spectral method in the transverse variable both for elliptic and hyperbolic NLS equations. As an example we study the transverse stability of the Peregrine solution, an exact solution to the one dimensional nonlinear Schr\"odinger (NLS) equation and thus a $y$-independent solution to the 2D NLS. It is shown that the Peregrine solution is unstable against all…