Search results for "leakage"

showing 10 items of 146 documents

Effect of aluminum chloride hemostatic agent on microleakage of class V composite resin restorations bonded with all-in-one adhesive

2012

Objectives: Since hemostatic agents can induce changes on enamel and dentin surfaces and influence composite resin adhesion, the aim of the present study was to evaluate the effect of the aluminum chloride hemostatic agent on the gingival margin microleakage of class V (Cl V) composite resin restorations bonded with all-in-one adhesive. Study design: Cl V cavities were prepared on the buccal surfaces of 60 sound bovine permanent incisors. Gingival margins of the cavities were placed 1.5 mm apical to the cemento-enamel junction (CEJ). The teeth were randomly divided into two groups of 30. In group 1, the cavities were restored without the application of a hemostatic agent; in group 2, the ca…

Materials scienceComposite numberDentistryDental CementsDental bondingIn Vitro TechniquesComposite Resinsstomatognathic systemChloridesDental cementClinical and Experimental DentistryDentinmedicineAluminum ChlorideAnimalsAluminum CompoundsGeneral DentistryAstringentsDental LeakageHemostatic AgentEnamel paintbusiness.industryDental Bonding:CIENCIAS MÉDICAS [UNESCO]medicine.anatomical_structureOtorhinolaryngologyvisual_artUNESCO::CIENCIAS MÉDICASvisual_art.visual_art_mediumSurgeryResearch-ArticleCattleAdhesivebusinessGingival marginMedicina Oral, Patología Oral y Cirugía Bucal
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Influence of cavity preparation technique (rotary vs. ultrasonic) on microleakage and marginal fit of six end-root filling materials

2010

Objectives: To evaluate in vitro the effect of cavity preparation with microburs and diamond-coated ultrasonic tips on the microleakage and marginal fit of six end-root filling materials. Study Design. The following materials were assessed: amalgam (Amalcap), zinc oxide eugenol (IRM), glass ionomer (Vitrebond), compomer (Cavalite), mineral particle aggregate (MTA) and composite (Clearfil). Cavity preparation was performed with microburs or diamond ultrasonic tips in single-root teeth. The seal was evaluated in two experiments: a microleakage assay on the passage of dye to the interface; and a scanning electron microscopy study and analysis of epoxy resin replicas, measuring the size of gaps…

Materials scienceComposite numberGlass ionomer cementDentistryHermetic seallaw.inventionRoot Canal Filling Materialschemistry.chemical_compoundlawRoot fillingUltrasonicsComposite materialGeneral DentistryDental Leakagebusiness.industryEpoxy:CIENCIAS MÉDICAS [UNESCO]OtorhinolaryngologychemistryZinc oxide eugenolvisual_artUNESCO::CIENCIAS MÉDICASvisual_art.visual_art_mediumSurgeryUltrasonic sensorDental Cavity PreparationbusinessCavity wall
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Effect of bleaching agents on sealing properties of different intraorifice barriers and root filling materials

2012

Objective: To evaluate the effect of intracoronal bleaching agents on the sealing properties of different intraorifice barriers and root filling materials. Study Design: The root canals of extracted human premolars (n=180) were prepared by using System GT rotary files and filled with either gutta-percha+AH Plus or Resilon+Epiphany sealer. In both groups, the coronal 3mm of root filling was removed and replaced with one of the following materials applied as intraorifice barriers (n=30/group): 1. ProProot-MTA; 2. Conventional Glass ionomer cement; and 3. Hybrid resin composite. In each subgroup, intracoronal bleaching was performed using either sodium perborate with distilled water or 35% hyd…

Materials scienceGlass ionomer cementDentistryEndodonticsRoot Canal Filling MaterialsBleaching Agentschemistry.chemical_compoundMaterials TestingRoot fillingHumansBicuspidComposite materialHydrogen peroxideFluid filtrationGeneral DentistryLeakage (electronics)Dental Leakagebusiness.industry:CIENCIAS MÉDICAS [UNESCO]Epiphany sealerOtorhinolaryngologychemistryDistilled waterUNESCO::CIENCIAS MÉDICASResearch-ArticleSurgerySodium perboratebusiness
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Dielectric-loaded surface plasmon polariton waveguides: Figures of merit and mode characterization by image and Fourier plane leakage microscopy

2008

International audience; Waveguiding of surface plasmon polaritons by dielectric-loaded metal structures is studied in detail by combining numerical simulations and leakage radiation microscopy. These types of waveguides are first numerically investigated using the effective index model and the differential method. We analyzed systematically the influence of the ridge width and thickness of the waveguide on the properties of the surface plasmon guided modes. In particular we investigated the confinement factor of the modes and their associated propagation lengths. These two parameters can be optimized by adjusting the thickness of the dielectric layer. Waveguides loaded with thick and thin d…

Materials scienceNanophotonicsPhysics::Optics02 engineering and technology01 natural scienceslaw.invention010309 opticsOpticslaw0103 physical sciencesSurface plasmon resonance[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsPlasmonLeakage (electronics)[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics][ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics]business.industrySurface plasmon021001 nanoscience & nanotechnologyCondensed Matter PhysicsSurface plasmon polaritonElectronic Optical and Magnetic Materials[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic[ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics[ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic0210 nano-technologybusinessWaveguideLocalized surface plasmon
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Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current

2001

We have investigated the properties of soft breakdown (SBO) in thin oxide (4.5 nm) nMOSFETs with measurements of the gate and substrate leakage currents using the carrier separation technique. We have observed that, at lower gate voltages, the level of the substrate current exhibits a plateau. We propose that the observed plateau is due to the Shockley-Hall-Read (SHR) generation of hole-electron pairs in the space charge region and at the Si-SiO/sub 2/ interface. At higher voltages, the substrate current steeply increases with voltage, due to a tunneling mechanism, trap-assisted or due to a localized effective thinning of the oxide, from the substrate valence band to the gate conduction ban…

Materials sciencePhysics and Astronomy (miscellaneous)business.industryElectrical engineeringOxideTime-dependent gate oxide breakdownReliabilitySettore ING-INF/01 - ElettronicaElectronic Optical and Magnetic MaterialsThreshold voltagechemistry.chemical_compoundMOSFETDepletion regionchemistryLeakage currentMOSFETOptoelectronicsDielectric breakdownElectrical and Electronic EngineeringbusinessQuantum tunnellingLeakage (electronics)Voltage
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Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

2019

Cu2O/ZnO:Al (AZO) and Cu2O/ZnO/AZO heterojunctions have been deposited on glass substrates by a unique three-step pulsed laser deposition process. The structural, optical, and electrical properties of the oxide films were investigated before their implementation in the final device. X-ray diffraction analysis indicated that the materials were highly crystallized along the c-axis. All films were highly transparent in the visible region with enhanced electrical properties. Atomic force and scanning electron microscopies showed that the insertion of a ZnO layer between the Cu2O and AZO films in the heterojunction enhanced the average grain size and surface roughness. The heterojunctions exhibi…

Materials scienceScanning electron microscopeOxideCu2O02 engineering and technology01 natural sciencesPulsed laser depositionchemistry.chemical_compoundElectronic Electrical and Electronic Engineering0103 physical sciencesMaterials ChemistrySurface roughnessElectrical and Electronic EngineeringElectronic band structurepulsed laser depositionLeakage (electronics)010302 applied physicsbusiness.industryOptical and Magnetic MaterialAZOHeterojunction021001 nanoscience & nanotechnologyCondensed Matter PhysicsGrain sizeElectronic Optical and Magnetic Materialssolar cellchemistryZnOOptoelectronicsHeterojunction0210 nano-technologybusinessJournal of Electronic Materials
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Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

2016

Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.

Materials scienceSchottky barrierchemistry.chemical_elementSchottky diodes01 natural sciencesIonpower semiconductor devicesReverse leakage currentchemistry.chemical_compoundXenonsilicon carbide0103 physical sciencesSilicon carbidecurrent-voltage characteristicsDiode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodeAngle of incidencemodelingchemistryOptoelectronicsbusinession radiation effects
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Improvement of IPMSM performance through a mixed radial-tangential rotor structure

2010

In this paper an IPMSM (Interior Permanent Magnet Synchronous Motor) rotor configuration optimization is proposed in order to increase the performances in terms of torque, limiting at the same time the rotor leakage flux. The final mixed radial and tangential rotor configuration here proposed and described determines a reduction in PM material quantity of about 25% compared to a tangential IPMSM one with the same dimension and weight, together with an increase of the motoring torque of about 50%. Some simulation carried out by using a FEM software and a comparative analysis with two traditional IPMSMs rotor configurations show that a significant improvement can be achieved with limited chan…

Materials scienceSquirrel-cage rotorStatorRotor (electric)Magnetic flux leakageSettore ING-IND/32 - Convertitori Macchine E Azionamenti ElettriciWound rotor motorlaw.inventionMagnetic coreControl theorylawIPMSM Permanent magnets (PM) RotorTorqueSynchronous motor2010 IEEE International Symposium on Industrial Electronics
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Long-term sealing ability of GuttaFlow versus Ah Plus using different obturation techniques.

2010

Objective. To compare the long-term sealing ability of GuttaFlow® using different obturation techniques. Study Design. Three hundred teeth, prepared with a crown-down technique, were divided into thirty experimental groups (n=10) to evaluate the apical and coronal leakage, at 3, 30 and 120 days, of lateral compaction gutta-percha + AH Plus?, lateral compaction gutta-percha + GuttaFlow®, single cone + AH Plus?, single cone + GuttaFlow®, and GuttaFlow® only. Results. Both coronal and apical leakage, at the three times of measurement, no significant differences were found among GuttaFlow® + lateral compaction gutta-percha and GuttaFlow® + single cone groups, whereas the only GuttaFlow® reached…

Materials scienceTime FactorsEpoxy ResinsCompactionApical leakage:CIENCIAS MÉDICAS [UNESCO]Silicon basedRoot Canal Filling MaterialsDrug CombinationsOtorhinolaryngologyRoot Canal ObturationCoronal planeUNESCO::CIENCIAS MÉDICASMaterials TestingHumansSurgerySingle coneDimethylpolysiloxanesGutta-PerchaGeneral DentistryLeakage (electronics)Biomedical engineeringMedicina oral, patologia oral y cirugia bucal
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Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs

2019

GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…

Materials scienceassurance testingRadiation effects02 engineering and technologyHigh-electron-mobility transistorradiation hardness01 natural scienceslcsh:Technologylaw.inventiontotal ionizing dose (TID)lawPower electronics0103 physical sciencesGeneral Materials Sciencelcsh:MicroscopyHigh-electron-mobility transistor (HEMT)Radiation hardeningLeakage (electronics)lcsh:QC120-168.85010302 applied physicsRadiation hardnessAssurance testinghigh-electron-mobility transistor (HEMT)lcsh:QH201-278.5business.industrylcsh:TTransistorWide-bandgap semiconductor021001 nanoscience & nanotechnologyThreshold voltageSemiconductorlcsh:TA1-2040Gallium nitride (GaN)adiation effectsradiation effectsOptoelectronicslcsh:Descriptive and experimental mechanicslcsh:Electrical engineering. Electronics. Nuclear engineeringTotal ionizing dosegallium nitride (GaN)0210 nano-technologybusinesslcsh:Engineering (General). Civil engineering (General)lcsh:TK1-9971Materials
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