Search results for "luminescence."
showing 10 items of 1568 documents
Infrared to visible upconversion luminescence properties in the system Ln2BaZnO5 (Ln=La, Gd)
2009
Abstract We have investigated the upconversion properties of the rare-earth doped systems La 2 BaZnO 5 ( I 4/ mcm ) and Gd 2 BaZnO 5 ( Pbnm ). The dependence of the luminescence properties on the identity and the concentration of the dopants, Er 3+ and Er 3+ co-doped with Yb 3+ , as well as on the synthetic route, was examined. Following coherent excitation at 975 nm, strong upconversion emission was observed in the visible region (525, 550 and 660 nm). Power dependence studies revealed a two photon process for these emissions. In the co-doped samples, a blue emission (410 nm) could also be observed. For this emission, the power dependence studies confirmed a three photon process.
Quantification of spatial inhomogeneity in perovskite solar cells by hyperspectral luminescence imaging
2016
Vacuum evaporated perovskite solar cells with a power conversion efficiency of 15% have been characterized using hyperspectral luminescence imaging. Hyperspectral luminescence imaging is a novel technique that offers spectrally resolved photoluminescence and electroluminescence maps (spatial resolution is 2 micrometer) on an absolute scale. This allows, using the generalized Planck’s law, the construction of absolute maps of the depth-averaged quasi-Fermi level splitting (Δμ), which determines the maximum achievable open circuit voltage (Voc) of the solar cells. In a similar way, using the generalized reciprocity relations the charge transfer efficiency of the cells can be obtained from the…
Effects induced by UV laser radiation on the blue luminescence of silica nanoparticles
2013
The effects induced on the blue luminescence centered around 2.8 eV, characteristic of silica nanoparticles, were investigated by monitoring its intensity during and after exposure to the third and the fourth harmonic of a Nd:YAG pulsed laser. The luminescence trend is found to be dependent on the UV photon energy: 3.50 eV photons induce a partial bleaching followed by a recovery in the post-irradiation stage; 4.66 eV photons cause a total bleaching permanent after the irradiation. These results are interpreted as the conversion of luminescent defects towards stable and metastable configurations.
Scanning optical microscopy modeling in nanoplasmonics
2012
International audience; One of the main purposes of nanoplasmonics is the miniaturization of optical and electro-optical components that could be integrable in coplanar geometry. In this context, we propose a numerical model of a polarized scanning optical microscope able to faithfully reproduce both photon luminescence and temperature distribution images associated with complex plasmonic structures. The images are computed, pixel by pixel, through a complete self-consistent scheme based on the Green dyadic functions (GDF) formalism. The basic principle consists in the numerical implementation of a realistic three-dimensional light beam acting as a virtual light tip able to probe the volume…
Electron drift properties in high pressure gaseous xenon
2018
[EN] Gaseous time projection chambers (TPC) are a very attractive detector technology for particle tracking. Characterization of both drift velocity and di¿usion is of great importance to correctly assess their tracking capabilities. NEXT-White is a High Pressure Xenon gas TPC with electroluminescent ampli¿cation, a 1:2 scale model of the future NEXT-100detector, which will be dedicated to neutrinoless double beta decay searches. NEXT-White has been operating at Canfranc Underground Laboratory (LSC) since December2016. The drift parameters have been measured using 83mKr for a range of reduced drift ¿elds at two di¿erent pressure regimes, namely 7.2 bar and 9.1 bar. Theresults have been comp…
Oxygen Exchange at the Internal Surface of AmorphousSiO2Studied by Photoluminescence of Isotopically Labeled Oxygen Molecules
2009
The exchange between lattice and interstitial oxygen species in an oxide was studied by the $^{16}\mathrm{O}\mathrm{\text{\ensuremath{-}}}^{18}\mathrm{O}$ isotope shift of the ${a}^{1}{\ensuremath{\Delta}}_{g}(v=0)\ensuremath{\rightarrow}{X}^{3}{\ensuremath{\Sigma}}_{g}^{\ensuremath{-}}(v=1)$ infrared photoluminescence band of the oxygen molecules (${\mathrm{O}}_{2}$) incorporated into the interstitial voids of amorphous ${\mathrm{SiO}}_{2}$ ($a\mathrm{\text{\ensuremath{-}}}{\mathrm{SiO}}_{2}$) by thermal annealing in $^{18}\mathrm{O}_{2}$ gas. A large site to site variation of the oxygen exchange rate, originating from structural disorder of $a\mathrm{\text{\ensuremath{-}}}{\mathrm{SiO}}_{…
Theory of radiative recombination from the metastable excited states of quantum dots
1998
The radiative recombination of an exciton ~electron-hole pair! confined in a semiconductor quantum dot is studied within a general model based on the effective-mass approximation. The dependence of the photoluminescence spectrum on the size of the dot and the magnetic field describe well a series of recent experimental results. In particular, a characteristic splitting of the main photoluminescence peak into a doublet or triplet is observed at the critical size and magnetic field, as a consequence of the appearance of metastable states in the exciton spectrum. @S0163-1829~98!06915-X#
Polaronic-type excitons in ferroelectric oxides: Microscopic calculations and experimental manifestation
2002
We discuss the current experimental and theoretical understanding of new polaronic-type excitons in ferroelectric-oxides charge-transfer vibronic excitons ~CTVE’s!, which are pairs of strongly correlated electronic and hole polarons. It is shown that charge-transfer‐lattice distortion interactions are the driving forces for CTVE formation. Hartree-Fock-type calculations performed in the framework of the intermediate neglect of differential overlap ~INDO! method as well as photoluminescence, second-harmonic generation, and UVabsorption high-temperature studies performed for ABO3 ferroelectric oxides strongly support the CTVE existence. Both single CTVE and a phase of strongly correlated CTVE…
Controlled type-I–type-II transition in GaAs/AlAs/AlxGa1−xAs double-barrier quantum wells
1997
We show that the insertion of extremely narrow AlAs layers in double-barrier GaAs/AlAs/${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As quantum wells results in a variety of electronic configurations, thus providing a powerful tool for tailoring the electronic transitions in GaAs heterostructures. In particular, the transition from type-I to type-II recombination is shown to occur in correspondence with variations by a single monolayer in the thickness of the AlAs and/or GaAs layers. Drastic changes in the recombination lifetimes are correspondingly observed; at the same time, the photoluminescence efficiency is found to be almost independent of the type-I-…
Quasimolecular luminescence centers formed by photoinduced recombination of exciton-created defects in KI
1995
Abstract The photoinduced recombination of exciton-created lattice defects - the F,H center pairs was studied in KI crystal at low temperatures. Two different luminescence centers with quasimolecular structure can be distinguished. One of them is the self-trapped exciton, the other one could be the H-plus-electron (H+e) center.