6533b85dfe1ef96bd12bdc34
RESEARCH PRODUCT
Controlled type-I–type-II transition in GaAs/AlAs/AlxGa1−xAs double-barrier quantum wells
B. ChastaingtPaola BorriMassimo GurioliJuan P. Martínez-pastorGérard NeuJean MassiesChristiane DeparisMarcello Coloccisubject
PhysicsCondensed Matter::Materials ScienceX-ray absorption spectroscopyPhotoluminescenceCondensed matter physicsAtomic electron transitionMonolayerHeterojunctionElectron configurationType (model theory)Condensed Matter::Mesoscopic Systems and Quantum Hall EffectQuantum welldescription
We show that the insertion of extremely narrow AlAs layers in double-barrier GaAs/AlAs/${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As quantum wells results in a variety of electronic configurations, thus providing a powerful tool for tailoring the electronic transitions in GaAs heterostructures. In particular, the transition from type-I to type-II recombination is shown to occur in correspondence with variations by a single monolayer in the thickness of the AlAs and/or GaAs layers. Drastic changes in the recombination lifetimes are correspondingly observed; at the same time, the photoluminescence efficiency is found to be almost independent of the type-I--type-II character of the transition.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1997-01-15 | Physical Review B |