Search results for "luminescence."
showing 10 items of 1568 documents
Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures
2001
Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentratio…
Cathodoluminescence study of undoped GaN films: Experiment and calculation
2009
Abstract In this paper, we report the theoretical and experimental results of cathodoluminescence (CL) from GaN layers grown at 800 °C by metal organic vapor phase epitaxy (MOVPE) on silicon substrate. The CL spectra recorded at room temperature reveal the near band-edge emission at 3.35–3.42 eV and a broad yellow luminescence at 2.2 eV. The CL depth analysis at constant power excitation shows inhomogeneous CL distribution in depth of these emissions as the electron beam increases from 3 to 25 keV. There appears a blue shift of the CL band-edge peaks with increasing sample depth. This behavior is explained by a change of the fundamental band gap due to residual strain and the local temperat…
Correlation between optical and transport properties of Ga-doped ZnO thin films prepared by pulsed laser deposition
2006
Abstract In this paper we report on the correlation between the transport and optical properties of Ga-doped ZnO films epitaxially grown on C-oriented sapphire substrates by means of pulsed laser deposition. Thin films with electron concentrations ranging between 10 20 and 10 21 cm −3 were prepared from targets containing 0.25–5 at.% Ga. The Ga content in the thin films was estimated by XPS, from the ratio between the intensities of the 2p peaks of Ga and Zn. The electron concentration in the films is very close to the Ga content for films prepared from low Ga content targets even at high deposition temperature. For Ga contents in the target larger than 1%, the Ga content in the films incr…
Transport properties of nitrogen doped p‐gallium selenide single crystals
1996
Nitrogen doped gallium selenide single crystals are studied through Hall effect and photoluminescence measurements in the temperature ranges from 150 to 700 K and from 30 to 45 K, respectively. The doping effect of nitrogen is established and room temperature resistivities as low as 20 Ω cm are measured. The temperature dependence of the hole concentration can be explained through a single acceptor‐single donor model, the acceptor ionization energy being 210 meV, with a very low compensation rate. The high quality of nitrogen doped GaSe single crystals is confirmed by photoluminescence spectra exhibiting only exciton related peaks. Two phonon scattering mechanisms must be considered in orde…
Azatruxene‐Based, Dumbbell‐Shaped, Donor–π‐Bridge–Donor Hole‐Transporting Materials for Perovskite Solar Cells
2020
Three novel donor-π-bridge-donor (D-π-D) hole-transporting materials (HTMs) featuring triazatruxene electron-donating units bridged by different 3,4-ethylenedioxythiophene (EDOT) π-conjugated linkers have been synthesized, characterized, and implemented in mesoporous perovskite solar cells (PSCs). The optoelectronic properties of the new dumbbell-shaped derivatives (DTTXs) are highly influenced by the chemical structure of the EDOT-based linker. Red-shifted absorption and emission and a stronger donor ability were observed in passing from DTTX-1 to DTTX-2 due to the extended π-conjugation. DTTX-3 featured an intramolecular charge transfer between the external triazatruxene units and the azo…
Photosensitivity of SiO2–Al and SiO2–Na glasses under ArF (193 nm) laser
2009
Abstract Photosensitivity of SiO 2 –Al and SiO 2 –Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO 2 –Al and transient, life time about one hour, visible darkening in the case of SiO 2 –Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case …
Flexible diphenylsulfone versus rigid dibenzothiophene-dioxide as acceptor moieties in donor-acceptor-donor TADF emitters for highly efficient OLEDs
2020
DG acknowledges funding from the ERDF PostDoc project No. 1.1.1.2/VIAA/1/16/177 . This research is/was funded by the European Regional Development Fund according to the supported activity ‘ Research Projects Implemented by World-class Researcher Groups ’ under Measure No. 01.2.2-LMT-K-718 . Ministry of Science and Technology (MOST), Taiwan , Grant No. MOST 106-2923-E-155-002-MY3 . This work was also supported by the Ministry of Education and Science of Ukraine (projects no. 0117U003908 and 0118U003862 ), and by the Olle Engkvist Byggmästare foundation (contract No. 189-0223 ). The quantum-chemical calculations were performed with computational resources provided by the High Performance Comp…
Luminescence and electron transport properties of GaN and AlN layers
2001
Abstract The transport properties of free charge carriers, photo- and cathodo-luminescence (CV) in GaN and AlN films obtained by MOCVD technique on sapphire and Si substrates, are investigated. The concentration of free charge carriers in GaN is of order 10 17 – 10 19 cm −3 whereas AlN thin films are insulating. The Hall mobility of electrons are 80– 140 cm 2 / V s ). In undoped GaN films the spectral composition of CL is close to photoluminescence (PL) when excited in the region of band–band transitions. The decay time constant of the 3.44 eV UV emission attributed to the bound exciton is considerably less than 1 ns , whereas the 3.26 eV violet (VI) band shows a slow hyperbolical decay ove…
Differently substituted benzonitriles for non-doped OLEDs
2020
DG acknowledges to the ERDF PostDoc grant No. 1.1.1.2/VIAA/1/16/177 . This research was funded by the European Regional Development Fund according to the supported activity ‘Research Projects Implemented by World-class Researcher Groups’ under Measure No. 01.2.2-LMT-K-718 .
Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics
2000
The structure of oxygen-related luminescence centres in nominally undoped and Y 2 O 3 doped AlN ceramics was investigated by electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically-detected EPR. The photoluminescence-detected EPR lines having g-values of 1.990 and 2.008 were assigned to a recombination between neighbouring donor and acceptor pairs. The two EPR lines at g = 1.987 and 2.003 detected via the recombination luminescence in the afterglow are thought to be due to a recombination between the same, but distant donor and acceptor pairs. The donor was previously speculated to be an electron trapped on an oxygen impurity which substitutes for a ni…