Search results for "luminescence."

Comparison of the F-type center thermal annealing in heavy-ion and neutron irradiated Al2O3 single crystals

2018

Abstract The optical absorption and thermally stimulated luminescence of Al2O3 (sapphire) single crystals irradiated with swift heavy ions (SHI) 238U with energy 2.4 GeV is studied with the focus on the thermal annealing of the F-type centers in a wide temperature range of 400–1500 K. Its theoretical analysis allows us to obtain activation energies and pre-exponentials of the interstitial oxygen ion migration, which recombine with both types of immobile electron centers (F and F+ centers). A comparison of these kinetics parameters with literature data for a neutron-irradiated sapphire shows their similarity and thus supports the use of SHI-irradiation for modeling the neutron irradiation.

Depth profiles of damage creation and hardening in MgO irradiated with GeV heavy ions

2019

This work has been performed within the framework of the EUROfusion Enabling Research project: ENR-MFE19.ISSP-UL-02 “Advanced experimental and theoretical analysis of defect evolution and structural disordering in optical and dielectric materials for fusion applications”. The views and opinions expressed herein do not necessarily reflect those of the European Commission.

Radiation-induced defects in sapphire single crystals irradiated by a pulsed ion beam

2020

Abstract The luminescence and thermal stability of defects formed in α-Al2O3 single crystals after powerful (300 keV) pulsed irradiation with C+/H+ ion beam were investigated. It was found by measuring of optical density, photoluminescence, and pulsed cathodoluminescence that ion irradiation induces both single F-, F+-centers and F2-type aggregate centers. An intense thermoluminescence band with a complex shape was observed in the broad temperature range of 350–700 K, its intensity decreases with increasing of the energy density of the ion beam. The thermal stability of the F-type defects produced in α-Al2O3 after irradiation with a pulsed ion beam is comparable to that in neutron-irradiate…

Luminescence dynamics of hybrid ZnO nanowire/CdSe quantum dot structures

2016

Colloidal CdSe quantum dots (QDs) functionalized with different organic linker molecules are attached to ZnO nanowires (NWs) to investigate the electron transfer dynamics between dots and wires. After linking the quantum dots to the nanowires, the photo-induced electron transfer (PET) from the QDs into the NWs becomes visible in the PL transients by a decrease of dot luminescence decay time. The different recombination paths inside the QDs and the PET process are discussed in the framework of a rate equation model. Photoconductivity studies confirm the electron transfer by demonstrating a strong enhancement of the wire photocurrent under light irradiation into the dot transition. (© 2016 WI…

Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental an…

2020

We report defect-related photoluminescence (PL) and its vacuum ultraviolet photoluminescence excitation (PLE) spectra of aluminum nitride layers with various layer thicknesses and dislocation densities grown on two different substrates: sapphire and silicon. The defect-related transitions have been distinguished and examined in the emission and excitation spectra investigated under synchrotron radiation. The broad PL bands of two defect levels in the AlN were detected at around 3 eV and 4 eV. In the PLE spectra of these bands, a sharp excitonic peak originating most probably from the A-exciton of AlN was clearly visible. Taking into account the exciton binding energy, the measurements allow…

Photoluminescence in Er-doped 0.4Na1/2Bi1/2TiO3-(0.6-x)SrTiO3-xPbTiO3 solid solutions

2020

Photoluminescence and optical second harmonic generation in Er-doped 0.4Na0.5Bi0.5TiO3-(0.6-x)SrTiO3-xPbTiO3 solid solutions is studied. Earlier, it was shown that upon increasing of PbTiO3 concent...

2021

Atomic layer deposition (ALD) technology has unlocked new ways of manipulating the growth of inorganic materials. The fine control at the atomic level allowed by ALD technology creates the perfect conditions for the inclusion of new cationic or anionic elements of the already-known materials. Consequently, novel material characteristics may arise with new functions for applications. This is especially relevant for inorganic luminescent materials where slight changes in the vicinity of the luminescent centers may originate new emission properties. Here, we studied the luminescent properties of CaS:Eu by introducing europium with oxygen ions by ALD, resulting in a novel CaS:EuO thin film. We …

Defect-induced blue luminescence of hexagonal boron nitride

2016

Abstract Native defect-induced photoluminescence around 400 nm (blue luminescence - BL) was studied in hBN materials with different size and various origins. The following spectral characterizations were used: spectra of luminescence and its excitation, luminescence dependence on temperature, luminescence kinetics, optically stimulated luminescence and infrared absorption. It was found, that the BL is characteristic for all these materials, which were studied. The BL forms a wide, asymmetric and phonon-assisted emission band at 380 nm. This luminescence can be excited either through the exciton processes, or with light from two defect-induced excitation bands at 340 nm and 265 nm. It was fo…

Formation of translucent nanostructured zirconia ceramics

2021

Abstract In this work the mechanisms that affect the optical transparency of nanostructured translucent ZrO2 ceramics are studied. The translucent ceramic samples were obtained from a low agglomeration nanosized powder at low pressure and low temperature sintering. Even low pressures cause structural changes and defect creation in the nanocrystals. Annealing was used to study the grain formation, structure and impact of defects. Significant changes in translucency were observed with increase in pore size. In order to further understand the defect creation, the obtained ceramics were doped with Er3+ ions and studied optically. Photoluminescence studies revealed a change in the ratio of green…

Luminescence of polymorphous SiO2

2016

Abstract The luminescence of self-trapped exciton (STE) was found and systematically studied in tetrahedron structured silica crystals (α-quartz, coesite, cristobalite) and glass. In octahedron structured stishovite only host material defect luminescence was observed. It strongly resembles luminescence of oxygen deficient silica glass and γ or neutron irradiated α-quartz. The energetic yield of STE luminescence for α-quartz and coesite is about 20% of absorbed energy and about 5(7)% for cristobalite. Two types of STE were found in α-quartz. Two overlapping bands of STEs are located at 2.5–2.7 eV. The model of STE is proposed as Si–O bond rupture, relaxation of created non-bridging oxygen (N…