Search results for "memristors"

showing 8 items of 8 documents

Electrochemical polymerization of ambipolar carbonyl-functionalized indenofluorene with memristive properties

2019

Abstract Carbonyl-functionalized indenofluorene was electropolymerized with a high faradaic efficiency of 85% and the solid state properties of the resulting polymeric thin films were investigated. They displayed modular optical properties depending on their oxidation state. The approach used for inorganic semiconductors was applied to polyindeonofluorene derivative. Mott-Schottky analysis evidenced a switching from p-type to n-type electrical conduction, suggesting an ambipolar behaviour of the polymer. As an application, flexible organic memristors were fabricated and resistive switching properties were observed.

02 engineering and technology010402 general chemistry01 natural sciencesSettore ING-INF/01 - ElettronicaOrganic memristorsInorganic Chemistrychemistry.chemical_compoundOxidation stateElectrochemical polymerizationElectrical and Electronic EngineeringPhysical and Theoretical ChemistryThin filmSpectroscopychemistry.chemical_classificationAmbipolar diffusionbusiness.industryOrganic ChemistryPolymerSettore CHIM/06 - Chimica Organica021001 nanoscience & nanotechnologyIndenofluorene derivatives Electrochemical polymerization Organic semiconductors Organic memristorsAtomic and Molecular Physics and Optics0104 chemical sciencesElectronic Optical and Magnetic MaterialsOrganic semiconductorSemiconductorChemical engineeringchemistryOrganic semiconductors0210 nano-technologybusinessFaraday efficiencyDerivative (chemistry)Indenofluorene derivatives
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Theory of Heterogeneous Circuits With Stochastic Memristive Devices

2022

We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors and/or inductors). Such circuits are described in terms of occupation probabilities of memristive states that are functions of reactive variables. As an illustrative example, the series circuit of a binary memristor and capacitor is considered in detail. Some analytical solutions are found. Our work offers a novel analytical/numerical tool for modeling complex stochastic networks, which may find a broad range of applications.

Computer scienceContinuum (topology)Binary numberCapacitorsMemristorSwitching circuitsTopologyInductorSeries and parallel circuitslaw.inventionComputer Science::Hardware ArchitectureCapacitorRange (mathematics)Mathematical modelComputer Science::Emerging TechnologiesStochastic processesIntegrated circuit modelinglawHardware_INTEGRATEDCIRCUITSElectrical and Electronic EngineeringMemristorsSwitchesElectronic circuitIEEE Transactions on Circuits and Systems II: Express Briefs
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Modeling Networks of Probabilistic Memristors in SPICE

2021

Efficient simulation of stochastic memristors and their networks requires novel modeling approaches. Utilizing a master equation to find occupation probabilities of network states is a recent major departure from typical memristor modeling [Chaos, solitons fractals 142, 110385 (2021)]. In the present article we show how to implement such master equations in SPICE – a general purpose circuit simulation program. In the case studies we simulate the dynamics of acdriven probabilistic binary and multi-state memristors, and dc-driven networks of probabilistic binary and multi-state memristors. Our SPICE results are in perfect agreement with known analytical solutions. Examples of LTspice code are…

FOS: Computer and information sciencesHardware_MEMORYSTRUCTURESCondensed Matter - Mesoscale and Nanoscale PhysicsFOS: Physical sciencesComputer Science - Emerging TechnologiesComputer Science::Hardware ArchitectureEmerging Technologies (cs.ET)Computer Science::Emerging TechnologiesmemristorsspicenetworksMesoscale and Nanoscale Physics (cond-mat.mes-hall)lcsh:Electrical engineering. Electronics. Nuclear engineeringprobabilistic computinglcsh:TK1-9971Radioengineering
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Probabilistic Memristive Networks: Application of a Master Equation to Networks of Binary ReRAM cells

2020

Abstract The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel approaches, as now the state of a circuit at an arbitrary moment in time cannot be predicted deterministically. Generally, these circuits should be described in terms of probabilities, the circuit variables should be calculated on average, and correlation functions should be used to explore interrelations among the variables. In this paper, we use, for the first time, a master equation to analyze the networks composed of probabilistic binary memristors. Analytical solutions of the master equation for the ca…

FOS: Computer and information sciencesProbabilistic computingComputer scienceGeneral MathematicsGeneral Physics and AstronomyBinary numberFOS: Physical sciencesComputer Science - Emerging TechnologiesMemristorTopologylaw.inventionModeling and simulationComputer Science::Hardware ArchitectureComputer Science::Emerging TechnologieslawMaster equationMesoscale and Nanoscale Physics (cond-mat.mes-hall)Probabilistic logicElectronic circuitCondensed Matter - Materials ScienceCondensed Matter - Mesoscale and Nanoscale PhysicsApplied MathematicsProbabilistic logicMaterials Science (cond-mat.mtrl-sci)Statistical and Nonlinear PhysicsMoment (mathematics)Emerging Technologies (cs.ET)State (computer science)NetworksMemristors
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Resistive switching behaviour in ZnO and VO 2 memristors grown by pulsed laser deposition

2014

The resistive switching behaviour observed in microscale memristors based on laser ablated ZnO and VO 2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm 2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm 2 ZnO-based memristors have the best resistance off/on ratio.

Laser ablationMaterials sciencebusiness.industryWide-bandgap semiconductorMemristorLaserSettore ING-INF/01 - ElettronicaActive devicesPulsed laser depositionlaw.inventionMemristors Non volatile memory ZnO VO2 PLDlawResistive switchingElectronic engineeringOptoelectronicsElectrical and Electronic EngineeringbusinessMicroscale chemistryElectronics Letters
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Modeling Networks of Probabilistic Memristors in SPICE

2021

Efficient simulation of stochastic memristors and their networks requires novel modeling approaches. Utilizing a master equation to find occupation probabilities of network states is a recent major departure from typical memristor modeling [Chaos, solitons fractals 142, 110385 (2021)]. In the present article we show how to implement such master equations in SPICE – a general purpose circuit simulation program. In the case studies we simulate the dynamics of acdriven probabilistic binary and multi-state memristors, and dc-driven networks of probabilistic binary and multi-state memristors. Our SPICE results are in perfect agreement with known analytical solutions. Examples of LTspice code are…

SPICEComputer scienceSpiceProbabilistic logicBinary number020206 networking & telecommunications02 engineering and technologyMemristorlaw.inventionComputer Science::Hardware ArchitectureComputer Science::Emerging TechnologieslawnetworksMaster equation0202 electrical engineering electronic engineering information engineeringApplied mathematicsElectrical and Electronic EngineeringMemristorsprobabilistic computingRadioengineering
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Fabrication and characterization of micrometer-scale ZnO memristors

2015

Memristors are an interesting class of resistive random access memory (RRAM) based on the electrical switching of metal oxide film resistivity . They are characterized for exhibiting resistive switching between a high-resistance state (HRS) and a low-resistance state (LRS) and have been recently considered as one of the most promising candidates for next-generation nonvolatile memory devices because of their low power consumption, fast switching operation, nondestructive readout, and remarkable scalability. The device structure is simply an oxide layer sandwiched between two metal electrodes. The switching behaviour is dependent both on the oxide material and the choice of metal electrodes.…

Settore ING-IND/23 - Chimica Fisica ApplicataFabrication and characterization micrometer-scale ZnO memristorsSettore ING-INF/01 - Elettronica
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Importance of the Window Function Choice for the Predictive Modelling of Memristors

2021

Window functions are widely employed in memristor models to restrict the changes of the internal state variables to specified intervals. Here, we show that the actual choice of window function is of significant importance for the predictive modelling of memristors. Using a recently formulated theory of memristor attractors, we demonstrate that whether stable fixed points exist depends on the type of window function used in the model. Our main findings are formulated in terms of two memristor attractor theorems, which apply to broad classes of memristor models. As an example of our findings, we predict the existence of stable fixed points in Biolek window function memristors and their absenc…

State variableComputer science02 engineering and technologyMemristorType (model theory)Fixed pointTopologyWindow functionlaw.inventionPredictive modelsComputer Science::Hardware ArchitectureComputer Science::Emerging TechnologiesMathematical modellawAttractor0202 electrical engineering electronic engineering information engineeringEvolution (biology)Electrical and Electronic EngineeringPolarity (mutual inductance)threshold voltage020208 electrical & electronic engineeringmemristive systemsBiological system modeling020206 networking & telecommunicationsWindow functionmemristorsIntegrated circuit modelingPredictive modellingIEEE Transactions on Circuits and Systems Ii-Express Briefs
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