6533b82efe1ef96bd12927d2
RESEARCH PRODUCT
Resistive switching behaviour in ZnO and VO 2 memristors grown by pulsed laser deposition
Roberto MacalusoF. Di QuartoGiuseppe LulloMauro MoscaA. D'angeloVincenzo CostanzaFulvio CarusoF. Di FrancoMonica SantamariaClaudio Calisubject
Laser ablationMaterials sciencebusiness.industryWide-bandgap semiconductorMemristorLaserSettore ING-INF/01 - ElettronicaActive devicesPulsed laser depositionlaw.inventionMemristors Non volatile memory ZnO VO2 PLDlawResistive switchingElectronic engineeringOptoelectronicsElectrical and Electronic EngineeringbusinessMicroscale chemistrydescription
The resistive switching behaviour observed in microscale memristors based on laser ablated ZnO and VO 2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm 2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm 2 ZnO-based memristors have the best resistance off/on ratio.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2014-02-01 | Electronics Letters |