Search results for "mikroelektroniikka"
showing 6 items of 6 documents
Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with -rays, X-rays, Protons and Heavy Ions
2019
The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under &gamma
Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications
2021
Proton direct ionization from low-energy protons has been shown to have a potentially significant impact on the accuracy of prediction methods used to calculate the upset rates of memory devices in space applications for state-of-the-art deep sub-micron technologies. The general approach nowadays is to consider a safety margin to apply over the upset rate computed from high-energy proton and heavy ion experimental data. The data reported here present a challenge to this approach. Different upset rate prediction methods are used and compared in order to establish the impact of proton direct ionization on the total upset rate. No matter the method employed the findings suggest that proton dir…
Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications
2016
An architectural performance comparison of bandgap voltage reference variants, designed in a $0.18~\mu \text {m}$ CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space appli…
Analytical models for the pulse shape of a superconductor-ferromagnet tunnel junction thermoelectric microcalorimeter
2022
AbstractThe superconductor-ferromagnet thermoelectric detector (SFTED) is a novel ultrasensitive radiation detector based on the giant thermoelectric effect in superconductor-ferromagnet tunnel junctions. We demonstrate analytical models and solutions in the time domain for a SFTED operated as a microcalorimeter (pulse excitation), in the linear small-signal limit. Based on these solutions, the signal current and temperature pulse response were studied for two different electrical circuit models, providing design conditions for stable and non-oscillatory response.Kindly check and confirm whether the corresponding author is correctly identified.The corresponding author is correct.
Direct Ionization Impact on Accelerator Mixed-Field Soft Error Rate
2020
We investigate, through measurements and simulations, the possible direct ionization impact in the accelerator soft error rate, not considered in standard qualification approaches. Results show that, for a broad variety of state-of-the art commercial components considered in the 65 nm to 16 nm technological range, indirect ionization is still expected to dominate the overall soft-error rate in the accelerator mixed-field. However, the derived critical charges of the most sensitive parts, corresponding to ∼0.7 fC, are expected to be at the limit of rapid direct ionization dominance and soft-error increase. peerReviewed
Particle radiation in microelectronics
2012
The unavoidable presence of particle radiation in space and on the ground combined with constantly evolving technology necessitates a deep understanding of the basic mechanisms underlying radiation effects in materials and electronic devices. This thesis provides an overview of the different radiation environments, with a review of the interaction mechanisms between energetic particles and matter. In this work a new semi-empirical model for estimating the electronic stopping force of solids for heavy ions is introduced. Radiation effects occurring in microelectronics due to particle radiation are also discussed with a brief introduction to radiation hardness assurance (RHA) testing of elect…