Search results for "mines"
showing 10 items of 2609 documents
Luminescence of phosphorus containing oxide materials: Crystalline SiO2‐P and 3P2O5⋅7SiO2; CaO⋅P2O5; SrO⋅P2O5 glasses
2014
Luminescence of phosphate glasses such as CaO⋅P2O5 and SrO⋅P2O5 is compared with that of phosphorus doped crystalline α-quartz and phosphosilicate glass with content 3P2O5⋅7SiO2. Water & OH groups are found by IR spectra in these materials. The spectrum of luminescence contains many bands in the range 1.5 - 5.5 eV. The luminescence bands in UV range at 4.5-5 eV are similar in those materials. Decay duration in exponential approximation manifests a time constant about 37 ns. Also a component in μs range was detected. PL band of μs component is shifted to low energy with respect to that of ∼37 ns component. This shift is about 0.6 eV. It is explained as singlet-triplet splitting of excited st…
<title>Optical properties of hydrogen-containing MgO crystal</title>
2008
The photoluminescence (PL), its excitation (PLE) and absorption spectra in ultraviolet, visible and infrared (UV-VIS-IR) regions were used to investigate the MgO single crystals irradiated by fast neutrons. It is shown that the photoluminescence band of the MgO crystals at 730 nm belongs to the hydrogen-containing complex centers V-OH-Fe3+, which are transformed during the irradiation with fast neutrons. The behavior of the PL band 730 nm after fast neutron irradiation depends on the iron-chromium concentration. It is found that the fast neutron irradiation produces the interstitial proton H+i and the Mg(OH)2 microphase.© (2008) COPYRIGHT SPIE--The International Society for Optical Engineer…
Photostimulated processes in the CsI-Tl crystal after UV irradiation
1997
The photostimulated luminescence is studied for CsI-Tl crystal after irradiation with ultraviolet light in the 80 - 300 K temperature range. The PSL creation spectrum coincides with the D absorption band at 80 K. Three bands are observed in the stimulation spectra at 80 K: 1400, 950, and 600 nm. The 1400 and 950 nm stimulation bands are presumably explained as optical transitions in the Tl 0 and V k centers situated in the spatial correlated pairs. The stimulation at 600 nm band is ascribed to the unperturbed Tl 0 centers.
Formation of luminescence centres under excitation with electron beams in PbWO 4 and ZnWO 4 crystals
2005
The leading edge of intrinsic luminescence pulse in PbWO 4 and ZnWO 4 single crystals is studied. The rise of luminescence intensity is observed after excitation with electron beam pulse. The luminescence rise is shown tobe a result of luminescence center formation via electron-hole recombination within spatially correlated pairs. An electron of a geminate electron-hole pair of PbWO 4 crystal self-traps and stimulates self-trapping of a hole at a close distance. In the ZnWO 4 crystal a hole of a geminate electron-hole pair self-traps and stimulates self-trapping of the electron producing a W 5 + center at a short distance. The rise-time of luminescence depends on spatial separation of recom…
host‐defect luminescence of stishovite
2005
a detailed study of the 4.75 eV luminescence band of stishovite single crystal (SiO2 with rutile structure) is reported. Kinetics of luminescence intensity is studied at durable (tens of minutes) X-ray excitation. The observed behaviour of the band intensity is explained by creation and destruction of luminescence centres depending on temperature both being determined by radiation stimulated diffusion of atomic particles. The luminescence decay is observed to last for minutes after X-ray irradiation while only for ns and hundreds of µs under pulsed e-beam irradiation suggesting a complicated recombination of the created defects. The UV band of stishovite is compared with the 4.9 eV luminesc…
Spectral Characteristics of Native Defects in BN
2002
Spectral characteristics of native defects from the crystalline lattice of c-BN were studied. It is found that the photoluminescence (PL) spectrum under exposure to ultraviolet-blue light has a complex structure containing a predominant wide 2.5 eV luminescence band at room temperature. The photostimulated luminescence (PSL) consists of a band, which is coincident with the 2.5 eV PL. The results obtained allow to conclude that the same defects are responsible for both the PL and PSL formation.
Luminescence of intrinsic defects in YAG polycrystalline powder
1997
In the present work we have investigated luminescence properties of the fine, well-crystallized undoped YAG polycrystalline powders and thermochemically treated YAG polycrystalline powders. Presented work give evidence of significant role of 'antisite' defects (AD), i.e., where some portion of one type of cations (Y 3+ ) occupy another cations (Al 3+ Oh ) sites and vice versa in YAG structure, on the creation and structure of luminescence centers in complex multi-component oxides.
<title>Origin of visible photoluminescence in NiO and Ni<formula><inf><roman>c</roman></inf></formula>Mg<…
2003
A study of the visible photoluminescence in single-crystal NiO and NicMg1-cO (c = 0.99, 0.98 and 0.95) solid solutions is presented for the first time. Two wide luminescence bands, peaked at approximately 12000 cm-1 and approximately 18500 cm-1, were observed. The dependence of their intensity and position on the excitation energy, temperature, and composition were investigated. We attribute the origin of two photoluminescence bands to the impurity- or defect perturbed Ni2+ excitons.© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
The role of Nb in intensity increase of Er ion upconversion luminescence in zirconia
2014
It is found that Nb co-doping increases the luminescence and upconversion luminescence intensity in rare earth doped zirconia. Er and Yb-doped nanocrystalline samples with or without Nb co-doping were prepared by sol-gel method and thermally annealed to check for the impact of phase transition on luminescence properties. Phase composition and grain sizes were examined by X-ray diffraction; the morphology was checked by scanning- and high-resolution transmission electron microscopes. Both steady-state and time-resolved luminescence were studied. Comparison of samples with different oxygen vacancy concentrations and different Nb concentrations confirmed the known assumption that oxygen vacanc…
<title>Primary radiation defect formation in silver halides</title>
1998
Under irradiation the formation of primary intrinsic defects in silver halide solid solutions AgBr1-xClx take place via strong exciton-phonon interaction. Efficiency of these defects formation depend on solid solution composition and within 0 <EQ x <EQ 0.15 dependence on temperature was observed too. Estimation shows efficiency of defects creation is approximately 0.01 for AgCl and noticeably higher for AgBr.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.