Search results for "nanoelektroniikka"
showing 10 items of 20 documents
Coexistence of superconductivity and spin-splitting fields in superconductor/ferromagnetic insulator bilayers of arbitrary thickness
2021
Ferromagnetic insulators (FI) can induce a strong exchange field in an adjacent superconductor (S) via the magnetic proximity effect. This manifests as spin splitting of the BCS density of states of the superconductor, an important ingredient for numerous superconducting spintronics applications and the realization of Majorana fermions. A crucial parameter that determines the magnitude of the induced spin splitting in FI/S bilayers is the thickness of the S layer d: In very thin samples, the superconductivity is suppressed by the strong magnetism. By contrast, in very thick samples, the spin splitting is absent at distances away from the interface. In this work, we calculate the density of …
Quantum interference and the time-dependent radiation of nanojunctions
2021
Using the recently developed time-dependent Landauer-B\"uttiker formalism and Jefimenko's retarded solutions to the Maxwell equations, we show how to compute the time-dependent electromagnetic field produced by the charge and current densities in nanojunctions out of equilibrium. We then apply this formalism to a benzene ring junction, and show that geometry-dependent quantum interference effects can be used to control the magnetic field in the vicinity of the molecule. Then, treating the molecular junction as a quantum emitter, we demonstrate clear signatures of the local molecular geometry in the non-local radiated power.
Normal metal - insulator - superconductor thermometers and coolers with titanium-gold bilayer as the normal metal
2018
We have fabricated superconductor - insulator - normal metal - insulator - superconductor (SINIS) tunnel junctions in which Al acts as the superconductor, AlOx is the insulator, and the normal metal consists of a thin Ti layer (5 nm) covered with a thicker Au layer (40 nm). We have characterized the junctions by measuring their current-voltage curves between 60 mK and 750 mK. For comparison, the same measurements have been performed for a SINIS junction pair whose normal metal is Cu. The Ti-Au bilayer decreases the SINIS tunneling resistance by an order of magnitude compared to junctions where Cu is used as normal metal, made with the same oxidation parameters. The Ti-Au devices are much mo…
Metallic Nanostructures Based on DNA Nanoshapes
2016
Metallic nanostructures have inspired extensive research over several decades, particularly within the field of nanoelectronics and increasingly in plasmonics. Due to the limitations of conventional lithography methods, the development of bottom-up fabricated metallic nanostructures has become more and more in demand. The remarkable development of DNA-based nanostructures has provided many successful methods and realizations for these needs, such as chemical DNA metallization via seeding or ionization, as well as DNA-guided lithography and casting of metallic nanoparticles by DNA molds. These methods offer high resolution, versatility and throughput and could enable the fabrication of arbit…
Plasmon-Induced Direct Hot-Carrier Transfer at Metal-Acceptor Interfaces.
2019
Plasmon-induced hot-carrier transfer from a metal nanostructure to an acceptor is known to occur via two key mechanisms: (i) indirect transfer, where the hot carriers are produced in the metal nanostructure and subsequently transferred to the acceptor, and (ii) direct transfer, where the plasmons decay by directly exciting carriers from the metal to the acceptor. Unfortunately, an atomic-level understanding of the direct-transfer process, especially with regard to its quantification, remains elusive even though it is estimated to be more efficient compared to the indirect-transfer process. This is due to experimental challenges in separating direct from indirect transfer as both processes o…
Influence of dissipative tunneling on the photodielectric effect associated with the excitation of impurity complexes A+ + e in a quasi-zero-dimensio…
2022
Effect of tunneling decay for the quasi-stationary A+-state, in an impurity complex A+ + e (a hole, localized on a neutral acceptor, interacting with an electron, localized in the ground state of a quantum dot) on the photodielectric effect, associated with the excitation of impurity complexes A+ + e in a quasi-zero-dimensional structure, has been studied in the zero-radius potential model in the one-instanton approximation. Calculation of the binding energy of a hole in an impurity complex A+ + e was performed in the zero radius potential model in the adiabatic approximation. It is shown that as the probability of dissipative tunneling increases, the binding energy of a hole in a complex A…
Nonlinear spin torque, pumping, and cooling in superconductor/ferromagnet systems
2020
We study the effects of the coupling between magnetization dynamics and the electronic degrees of freedom in a heterostructure of a metallic nanomagnet with dynamic magnetization coupled with a superconductor containing a steady spin-splitting field. We predict how this system exhibits a non-linear spin torque, which can be driven either with a temperature difference or a voltage across the interface. We generalize this notion to arbitrary magnetization precession by deriving a Keldysh action for the interface, describing the coupled charge, heat and spin transport in the presence of a precessing magnetization. We characterize the effect of superconductivity on the precession damping and th…
Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry
2019
In this study of nanoscale etching for state-of-the-art device technology, the importance of surface chemistry, in particular the nature of the surface oxide, is demonstrated for two III-V materials. Striking differences in etching kinetics were found for GaAs and InP in sulphuric and hydrochloric acidic solutions containing hydrogen peroxide. Under similar conditions, etching of GaAs was much faster, while the dependence of the etch rate on pH, and on H2O2 and acid concentrations also differed markedly for the two semiconductors. Surface analysis techniques provided information on the product layer present after etching: strongly non-stoichiometric porous (hydr)oxides on GaAs and a thin st…
Current Rectification in Junctions with Spin-Split Superconductors
2022
Spin-split superconductors exhibit an electron-hole asymmetric spin-resolved density of states, but the symmetry is restored upon averaging over spin. On the other hand, asymmetry appears again in tunneling junctions of spin-split superconductors with a spin-polarized barrier. As demonstrated recently in both theory and experiment, this fact leads to a particularly strong thermoelectric effect in superconductor-ferromagnet structures. In this work we show another important effect stemming from the electron-hole asymmetry: current rectification. We calculate the charge current in spin-polarized tunnel junctions of a normal metal and a spin-split superconductor with ac and dc voltage bias. In…
Phase-dependent microwave response of a graphene Josephson junction
2021
Gate-tunable Josephson junctions embedded in a microwave environment provide a promising platform to in situ engineer and optimize novel superconducting quantum circuits. The key quantity for the circuit design is the phase-dependent complex admittance of the junction, which can be probed by sensing a radio frequency SQUID with a tank circuit. Here, we investigate a graphene-based Josephson junction as a prototype gate-tunable element enclosed in a SQUID loop that is inductively coupled to a superconducting resonator operating at 3 GHz. With a concise circuit model that describes the dispersive and dissipative response of the coupled system, we extract the phase-dependent junction admittanc…