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Temperature Coefficients of Crystal Defects in Multicrystalline Silicon Wafers
2020
This article investigates the influence of crystallographic defects on the temperature sensitivity of multicrystalline silicon wafers. The thermal characteristics of the implied open-circuit voltage is assessed since it determines most of the total temperature sensitivity of the material. Spatially resolved temperature-dependent analysis is performed on wafers from various brick positions; intragrain regions, grain boundaries, and dislocation clusters are examined. The crystal regions are studied before and after subjecting the wafers to phosphorus gettering, aiming to alter the metallic impurity concentration in various regions across the wafers. Most intragrain regions and grain boundarie…
Direct and indirect determination of electrocaloric effect in Na0.5Bi0.5TiO3
2017
This work has been supported by the National Research Program in the framework of the project “Multifunctional Materials and composites, photonics and nanotechnology (IMIS2).”
Anomalies of dielectric properties and conductivity in single domain LiNbO3:Zn crystals
2016
ABSTRACTA study of the temperature dependence of dielectric constant, conductivity, and piezoelectric modulus in the single-domain state of LiNbO3 crystals modified by Zn admixture at threshold concentration is reported. Unipolarity of the LiNbO3:Zn crystals is observed to increase after treatment of brand-new samples by high-temperature electro-diffusion annealing and by subsequent high-temperature annealing of short-circuited samples. The observed effects are explained as a result of meta-stable residual domains collapsing at high temperature the collapse being assisted by disintegration of charged clusters stabilizing domain walls. The rise of unipolarity is accompanied by anomalies on t…
Ultra-Wide Band Gap in Two-Dimensional Phononic Crystal with Combined Convex and Concave Holes
2017
A phononic crystal with an ultra‐wide band gap is proposed, whose unit cell consists of a cross‐like concave hole in the center and four square convex holes at the corners. The dispersion relations, modal kinetic energy ratio, and eigenmodes at edges of the band gaps are investigated by using the finite element method. The influence of the geometrical parameters of the convex and concave holes on the band gaps is further analyzed. After optimization, an ultra‐wide band gap with gap‐to‐midgap ratio of 156.0% is achieved, with the filling fraction keeping a relative small value. Numerical results illustrate that the combination of convex and concave holes is a practicable direction for struct…
Revision of the freezing concept in relaxor ferroelectrics: the case of Na0.5Bi0.5TiO3-Sr0.7Bi0.2TiO3 solid solutions
2020
Presence of a frequency-independent maximum and a frequency-dependent shoulder in temperature-frequency dependence of dielectric permittivity are characteristic features of NBT-based solid solution...
Half-Heusler superlattices as model systems for nanostructured thermoelectrics
2015
The efficiency of thermoelectric materials is directly related to the dimensionless figure of merit , therefore, one of the means to improve ZT is to reduce the thermal conductivity. Our research focuses on half-Heusler superlattices (SLs) and the relationship between the SL period and the thermal conductivity. The cross-plane thermal conductivity of DC-sputtered TiNiSn/HfNiSn SLs was measured by the 3 method at room temperature and a clear reduction of was achieved for all SL periods, in particular for periods smaller than 20 nm. Moreover, the thermal conductivities of TiNiSn and HfNiSn single films display reduced values compared to the literature data for bulk materials. Furthermore, we …
Electronic structure and magnetic order in Cu Zn(1−)O: A study GGA and GGA + U
2019
Abstract Based on density functional theory within GGA formalism, first-principles calculations were performed in order to study the structural, electronic, and magnetic properties of Cu-doped ZnO compound with dopant concentrations x = 0.028, 0.042, 0.056, and 0.125. It was found that CuxZn(1−x)O is ferromagnetic for both the closest and farthest impurity distances, but it is more stable energetically for the closest one. For all concentrations we obtained nearly half − metallic behavior. The calculations show that two substitutional Cu atoms introduce a magnetic moment of about 2.0 μB for all dopant concentrations. The results indicate that the magnetic ground state originates from the st…
Hole localization in thermoelectric half-Heusler (Zr0.5Hf0.5)Co(Sb1−xSn ) thin films
2019
Abstract The (Ti, Zr, Hf)Co(Sb 1 − x Snx) material class has recently come into focus as an attractive p-type high-temperature thermoelectric material. This study experimentally demonstrates that homogeneous, highly textured (Zr0.5Hf0.5)Co(Sb 1 − x Snx) thin films can be grown on single crystalline MgO. By varying the sputter power, samples with both positive and negative Seebeck coefficient can be grown. The underlying reason for the sign change is the segregation of Sn nano-inclusions, which lower the effective doping of the half-Heusler matrix. Similarly the Hall constant also switches sign at low temperatures, which is modeled assuming semi-metal behavior and low temperature hole locali…
Half-Heusler materials as model systems for phase-separated thermoelectrics
2015
Semiconducting half-Heusler compounds based on NiSn and CoSb have attracted attention because of their good performance as thermoelectric materials. Nanostructuring of the materials was experimentally established through phase separation in (T1−x′Tx″)T(M1−yMy′) alloys when mixing different transition metals (T, T′, T″) or main group elements (M, M′). The electric transport properties of such alloys depend not only on their micro- or nanostructure but also on the atomic-scale electronic structure. In the present work, the influence of the band structure and density of states on the electronic transport and thermoelectric properties is investigated in detail for the constituents of phase-sepa…
High-pressure study of the infrared active modes in wurtzite and rocksalt ZnO
2011
International audience; We present a high-pressure study of ZnO carried out in the mid- to far-infrared frequency domain with the aim of characterizing the optic modes of wurtzite and rocksalt ZnO. We obtained the pressure coefficients of the E1(TO), E1(LO), A1(TO), and A1(LO) modes of the low-pressure wurtzite phase and compare them with previous Raman measurements. The optical modes of the high-pressure rocksalt phase are infrared active, so we were able to determine their wave numbers and pressure dependencies. In the wurtzite phase, high pressure induces a slight decrease in both longitudinal and transverse effective charges. The decrease is more pronounced in the rocksalt phase.