Search results for "purity"
showing 10 items of 356 documents
Migration kinetics of ion-implanted beryllium in glassy carbon
2008
Abstract Migration kinetics of low-concentration implanted 7 Be in glassy carbon has been studied by the modified radiotracer technique at temperatures 1285 °C and 1340 °C. The annealed sample concentration profiles show two distinctive components: (i) Main profile broadening assigned to beryllium trapping in defects during annealing. (ii) Tail parts on both sides of the profile maximum related to faster migration. Of the latter the profile representing bulk diffusion lies on the region free of defect influence and is well described by concentration-independent diffusivity. The features of the concentration profile broadening towards the sample surface indicate partial Be trapping in defect…
A Novel Method for Characterizing Temperature Sensitivity of Silicon Wafers and Cells
2019
In this paper, we present a novel method to obtain temperature dependent lifetime and implied-open-circuit voltage (iV OC ) images of silicon wafers and solar cells. First, the method is validated by comparing the obtained values with global values acquired from lifetime measurements (for wafers) and current-voltage measurements (for cells). The method is then extended to acquire spatially resolved images of iV OC temperature coefficients of silicon wafers and cells. Potential applications of the proposed method are demonstrated by investigating the temperature coefficients of various regions across multi-crystalline silicon wafers and cells from different heights of two bricks with differe…
Insights into Intrinsic Defects and the Incorporation of Na and K in the Cu2ZnSnSe4 Thin-Film Solar Cell Material from Hybrid-Functional Calculations
2016
We have performed density functional theory calculations using the HSE06 hybrid functional to investigate the energetics, atomic, and electronic structure of intrinsic defects as well as Na and K impurities in the kesterite structure of the Cu2ZnSnSe4 (CZTSe) solar cell material. We found that both Na and K atoms prefer to be incorporated into this material as substitutional defects in the Cu sublattice. At this site highly stable (Na–Na), (K–K), and (Na–K) dumbbells can form. While Na interstitial defects are stable in CZTSe, the formation of K interstitial defects is unlikely. In general, the calculated formation energies for Na-related defects are always lower compared to their K-related…
Modelling of expected B, C, N and O Lyman-α line intensities emitted from W7-X plasmas and measured by means of the W7-X light impurity monitor system
2021
AbstractThe “C/O Monitor” for Wendelstein 7-X (W7-X) is a dedicated light impurity XUV spectrometer intended to measure Lyman-α transitions of hydrogen-like ions of four low-Z impurities—boron (4.9 nm), carbon (3.4 nm), nitrogen (2.5 nm) and oxygen (1.9 nm). Since the discussed diagnostic will deliver continuous information about the line intensities, it is crucial to understand the origin of the obtained signals with respect to the experimental plasma conditions (electron temperature and density). This, however, might be difficult because of the broad acceptance angle of the spectrometer and irregular shape of the plasma edge or SOL where the radiation is expected to mostly come from, depe…
Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device
2020
In this work, we fabricated a 2D van der Waals heterostructure device in an inert nitrogen atmosphere by means of a dry transfer technique in order to obtain a clean and largely impurity free stack of hexagonal boron nitride (hBN)-encapsulated few-layer graphene. The heterostructure was contacted from the top with gold leads on two sides, and the device’s properties including intrinsic charge carrier density, mobility, and contact resistance were studied as a function of temperature from 4 K to 270 K. We show that the contact resistance of the device mainly originates from the metal/graphene interface, which contributes a significant part to the total resistance. We demonstrate that current…
Temperature Coefficients of Crystal Defects in Multicrystalline Silicon Wafers
2020
This article investigates the influence of crystallographic defects on the temperature sensitivity of multicrystalline silicon wafers. The thermal characteristics of the implied open-circuit voltage is assessed since it determines most of the total temperature sensitivity of the material. Spatially resolved temperature-dependent analysis is performed on wafers from various brick positions; intragrain regions, grain boundaries, and dislocation clusters are examined. The crystal regions are studied before and after subjecting the wafers to phosphorus gettering, aiming to alter the metallic impurity concentration in various regions across the wafers. Most intragrain regions and grain boundarie…
Electronic structure and magnetic order in Cu Zn(1−)O: A study GGA and GGA + U
2019
Abstract Based on density functional theory within GGA formalism, first-principles calculations were performed in order to study the structural, electronic, and magnetic properties of Cu-doped ZnO compound with dopant concentrations x = 0.028, 0.042, 0.056, and 0.125. It was found that CuxZn(1−x)O is ferromagnetic for both the closest and farthest impurity distances, but it is more stable energetically for the closest one. For all concentrations we obtained nearly half − metallic behavior. The calculations show that two substitutional Cu atoms introduce a magnetic moment of about 2.0 μB for all dopant concentrations. The results indicate that the magnetic ground state originates from the st…
Arsenic diffusion in relaxedSi1−xGex
2003
The intrinsic As diffusion properties have been determined in relaxed ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ epilayers. The properties were studied as a function of composition x for the full range of materials with $x=0,$ 0.20, 0.35, 0.50, 0.65, 0.8, and 1. The activation enthalpy ${E}_{a}$ was found to drop systematically from 3.8 eV $(x=0)$ to 2.4 eV $(x=1).$ Comparisons with other impurity atom- and self-diffusion results in Si, Ge, and SiGe show that both interstitials and vacancies contribute as diffusion vehicles in the composition range $0l~xl~0.35$ and that vacancy mechanism dominates diffusion in the composition range $0.35lxl~1.$
Interaction of carbon with microstructural defects in a W-Re matrix: An ab initio assessment
2019
The interaction of carbon atoms with point defects and the core of edge and screw dislocations with Burgers vector a 0 / 2 ⟨ 111 ⟩ in W and a W-Re matrix is studied by means of ab initio calculations. The structure and energetics of the ground-state atomic configurations are presented and rationalized. It is found that di-vacancies, which are thermally unstable in pure W according to the state-of-the-art ab initio calculations, can nucleate at C and Re-C complexes, which fill the gap in the explanation of the emergence of nanovoids observed experimentally under irradiation. Also, on the basis of the recent experimental evidence and our calculations, the temperature ranges for the manifestat…
Low-temperature luminescence of CdI2 under synchrotron radiation
2020
Synchrotron radiation is applied to study visible and UV luminescence spectra and their excitation spectra of undoped as well as In and Sb doped cadmium iodide crystals at 10 K. The origin of principal luminescence bands and the role of impurities in the formation of emission centers are discussed. The luminescence properties have been explained based on the electronic structure of CdI2 crystals.