Search results for "radiation damage"
showing 10 items of 38 documents
UV–VUV laser induced phenomena in SiO2 glass
2004
Abstract Creation and annihilation of point defects were studied for SiO2 glass exposed to ultraviolet (UV) and vacuum UV (VUV) lights to improve transparency and radiation toughness of SiO2 glass to UV–VUV laser light. Topologically disordered structure of SiO2 glass featured by the distribution of SiOSi angle is a critical factor degrading transmittance near the fundamental absorption edge. Doping with terminal functional groups enhances the structural relaxation and reduces the number of strained SiOSi bonds by breaking up the glass network without creating the color centers. Transmittance and laser toughness of SiO2 glass for F2 laser is greatly improved in fluorine-doped SiO2 glass…
Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation
2020
Abstract The stability of black silicon induced junction photodetectors under high-energy irradiation was tested with 11 MeV protons and 12 MeV electrons using fluence of 1 ⋅ 10 10 protons/cm2 and dose of 67 krad(Si) for protons and electrons, respectively. The energies and dose levels were selected to test radiation levels relevant for space applications. The degradation was evaluated through dark current and external quantum efficiency changes during (within 1 h after each step) and after (some days after) full irradiation sequences. Furthermore, the black silicon photodetectors were compared to planar silicon induced junction and planar silicon pn-junction photodetectors to assess the co…
Silicon detectors for the sLHC
2011
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the RandD programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect …
In situ and postradiation analysis of mechanical stress in Al2O3:Cr induced by swift heavy-ion irradiation
2010
Abstract Optical spectroscopy and TEM techniques have been applied to study the radiation damage and correlated mechanical stresses in Al2O3 and Al2O3:Cr single crystals induced by (1–3) MeV/amu Kr, Xe and Bi ion irradiation. Mechanical stresses were evaluated in situ using a piezospectroscopic effect through the shift of the respective lines in ionoluminescence spectra. It was found that dose dependence of the stress level for Xe and Bi ions, when ionization energy loss exceeds the threshold of damage formation via electronic excitations, exhibits several alternate stages showing the build-up and relaxation of stresses. The beginning of relaxation stages is observed at fluences associated …
Radiation-hard semiconductor detectors for SuperLHC
2005
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10^35 cm^(- 2) s(- 1) has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016 cm 2. The CERN-RD50 project ''Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders'' has been established in 2002 to explore…
A gas ionisation Direct-STIM detector for MeV ion microscopy
2015
Abstract Direct-Scanning Transmission Ion Microscopy (Direct-STIM) is a powerful technique that yields structural information in sub-cellular whole cell imaging. Usually, a Si p-i-n diode is used in Direct-STIM measurements as a detector. In order to overcome the detrimental effects of radiation damage which appears as a broadening in the energy resolution, we have developed a gas ionisation detector for use with a focused ion beam. The design is based on the ETH Frisch grid-less off-axis Geiger–Muller geometry. It is developed for use in a MeV ion microscope with a standard Oxford Microbeams triplet lens and scanning system. The design has a large available solid angle for other detectors …
Incomplete retention of radiation damage in zircon from Sri Lanka
2004
A suite of 18 zircon gemstones from placers in the Highland/Southwestern Complex, Sri Lanka, were subjected to a comprehensive study of their radiation damages and ages. The investigation included X-ray diffraction, Raman and PL spectroscopy, electron microprobe, PIXE and HRTEM analysis, as well as (U-Th)/He and SHRIMP U-Th-Pb age determinations. Zircon samples described in this study are virtually homogeneous. They cover the range from slightly metamict to nearly amorphous. Generally concordant U-Th-Pb ages averaging 555 ± 11 Ma were obtained. Late Ordovician zircon (U-Th)/He ages scattering around 443 ± 9 Ma correspond reasonably well with previously determined biotite Rb-Sr ages for rock…
Recent results from the ATLAS SCT irradiation programme
2000
Abstract The irradiation facility at the CERN proton synchrotron, set up to irradiate full-size prototypes of silicon microstrip detectors for the ATLAS semiconductor tracker, is described and measurements of the detector currents during irradiation are reported. The detector dark currents can be described by bulk radiation damage models demonstrating the radiation hardness of the detector design and allowing the current damage factor α and the acceptor introduction term β to be determined. Results from testbeam studies of a module with an irradiated detector and binary readout in a magnetic field and with the beam incident over a range of angles are reported. The hit efficiency and spatial…
Radiation damage of heavy crystalline detector materials by 24GeV protons
2013
Abstract Samples of three heavy crystalline materials: PbWO4, Bi4Si3O12, and PbF2 were irradiated in a high-intensity 24 GeV proton beam at the CERN PS to fluencies of 3.8×1013 protons/cm2. The optical transmission radiation damage was measured and all crystals show a shift of the cutoff in the transmission spectrum that is not observed when the crystals are irradiated with γ radiation. This shift of the cutoff under proton irradiation seems to be a general property of the heavy crystalline materials. A mechanism for this proton-induced transmission damage is discussed.
Characterisation of radiation damage in silicon photomultipliers with a Monte Carlo model
2008
Measured response functions and low photon yield spectra of silicon photomultipliers (SiPM) were compared to multi-photoelectron pulse-height distributions generated by a Monte Carlo model. Characteristic parameters for SiPM were derived. The devices were irradiated with 14 MeV electrons at the Mainz microtron MAMI. It is shown that the first noticeable damage consists of an increase in the rate of dark pulses and the loss of uniformity in the pixel gains. Higher radiation doses reduced also the photon detection efficiency. The results are especially relevant for applications of SiPM in fibre detectors at high luminosity experiments.