Search results for "raman scattering"
showing 10 items of 284 documents
Time-Resolved Coherent Anti-Stokes Raman Scattering of Graphene: Dephasing Dynamics of Optical Phonon.
2017
We report dynamics of the G-mode in graphene probed with time-resolved coherent anti-Stokes Raman scattering measurements. By applying BOXCARS excitation geometry with three different excitation wavelengths, various nonlinear processes can be selectively detected due to energy and momentum conservation and temporal sequence of the pulses. The Raman signal due to resonant coherent excitation of the G-mode shows exponential decay with lifetime of ∼325 ± 50 fs. This decay time is shorter than expected based on the line width of the G-mode in the Raman spectrum. We propose that the unexpectedly short dephasing time is a result of dynamic variation of nonadiabatic coupling of the photoexcited el…
Absorption and luminescence in amorphous silica synthesized by low-pressure plasmachemical technology
2007
A comparison study of as-deposited by the hydrogen-free SPCVD process silicon dioxide with and without fluorine as well as the one in the form of fused materials is performed to define whether glass forming processing affects its optical properties. Raman scattering, optical absorption in the vacuum ultraviolet region as well as luminescence at different temperatures and various excitation conditions are measured. A difference in Urbach rule parameters and intrinsic defect concentrations for different samples is revealed. No significant impact on the structure responsible for Raman scattering is observed.
Temperature dependence of Raman scattering and luminescence of the disordered Zn0.5Cd0.5Se alloy
2002
Abstract We report on luminescence and Raman scattering measurements of zincblende Zn0.5Cd0.5Se thin film grown by molecular beam epitaxy. From the luminescence data of the exciton peak, the dependence of the energy gap with temperature [ d E g / d T=(4.35±0.01)×10 −4 meV / K ] and zero-temperature phonon renormalization energy ( Δ E(0)=30±1 meV ) have been obtained. The broadening of the excitonic emission as the temperature increases is mainly due to scattering processes with longitudinal optical phonons and residual ionized impurities. Raman scattering shows a multiphonon structure, which depends on the temperature. At low temperatures, up to the fifth-order phonon peaks appear due to re…
Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs
2002
5 páginas, 4 figuras, 1 tabla.
Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals
2003
ABSTRACTRaman scattering and photoluminescence (PL) spectroscopy with sub-bandgap excitation has been applied to explore tracing of common impurities (in particular of oxygen) in AlN. Bulk AlN crystals grown by the high temperature sublimation method were studied. PL bands have been observed at around 375 nm and at 560–660 nm and have been attributed to oxygen and to nitrogen vacancy/aluminium excess defects, respectively. The 375 nm UV PL band was found to shift with oxygen concentration. Micro-Raman spectra of the bulk AlN samples were measured in different polarisations. Besides normal Raman modes of AlN the presence of additional vibrational modes was detected. The modes were discussed …
Physical properties and applications of InxGa1−xN nanowires
2014
We have successfully grown InxGa1−xN nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. InxGa1−xN is an one-mode alloy, where the different optical modes have an intermediate frequency of that of pure InN and GaN. The sample composition can be derived from the Raman data. On the other hand, by using the optical gap provided by the emission spectra, we conclude that the samples have a lower Ga content than that provided by the Raman analysis. X-ray fluorescence maps and photoluminescence measured in single nanowi…
Optical properties of nitride nanostructures
2010
In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or t…
Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots
2002
6 páginas, 3 figuras.
Resonant hyper-Raman scattering in spherical quantum dots
1998
A theoretical model of resonant hyper-Raman scattering by an ensemble of spherical semiconductor quantum dots has been developed. The electronic intermediate states are described as Wannier-Mott excitons in the framework of the envelope function approximation. The optical polar vibrational modes of the nanocrystallites (vibrons) and their interaction with the electronic system are analized with the help of a continuum model satisfying both the mechanical and electrostatic matching conditions at the interface. An explicit expression for the hyper-Raman scattering efficiency is derived, which is valid for incident two-photon energy close to the exciton resonances. The dipole selection rules f…
Generation of High-Repetition-Rate Dark Soliton Trains and Frequency Conversion in Optical Fibers
1998
Induced modurational polarization instability in birefringent fibers leads to trains of dark soliton-like pulses. Optimal large-signal cw and soliton frequency conversion is also analysed.