Search results for "roska"

Itsekantavien hiilinanoputkivahvisteisten alumiinioksidikalvojen valmistus ja karakterisointi

2016

Tässä pro gradu -tutkielmassa pyrittiin valmistamaan hiilinanoputkilla vahvistettuja itsekantavia Al2O3-ohutkalvoja. Ohutkalvot kasvatettiin märkäetsauksella ja atomikerroskasvatuksella ja niitä vahvistettiin levittämällä hiilinanoputkia Al2O3-kerrosten väliin. Hiilinanoputkia linkitettiin verkostomaiseksi rakenteeksi ionisäteilytyksellä. Kalvoja karakterisoitiin valmistuksen aikana ja sen jälkeen elektronimikroskopialla, atomivoimamikroskopialla, profilometrialla ja ramanspektroskopialla. Käytettyjen karakterisointimenetelmien perusteella hiilinanoputkien linkittymistä saattoi olla havaittavissa. Hiilinanoputkilla vahvistettujen itsekantavien Al2O3-kalvojen Youngin moduulin arvoksi saatiin…

Roska on luksusta! : etnologinen tutkimus roskan kulttuurisista merkityksistä

2005

Atomic Layer Deposition of Intermetallic Fe4Zn9 Thin Films from Diethyl Zinc

2022

| openaire: EC/H2020/765378/EU//HYCOAT We present a new type of atomic layer deposition (ALD) process for intermetallic thin films, where diethyl zinc (DEZ) serves as a coreactant. In our proof-of-concept study, FeCl3 is used as the second precursor. The FeCl3 + DEZ process yields in situ crystalline Fe4Zn9 thin films, where the elemental purity and Fe/Zn ratio are confirmed by time-of-flight elastic recoil detection analysis (TOF-ERDA), Rutherford backscattering spectrometry (RBS), atomic absorption spectroscopy (AAS), and energy-dispersive X-ray spectroscopy (EDX) analyses. The film thickness is precisely controlled by the number of precursor supply cycles, as expected for an ALD process.…

Monika Helfer: Roskaväkeä

2021

Kirja-arvostelu teoksesta Monika Helfer: Roskaväkeä (Die Bagage). Suom. Anne Kilpi. Huippu 2021. 185 s. nonPeerReviewed

Tribological properties of thin films made by atomic layer deposition sliding against silicon

2018

Interfacial phenomena, such as adhesion, friction, and wear, can dominate the performance and reliability of microelectromechanical (MEMS) devices. Here, thin films made by atomic layer deposition (ALD) were tested for their tribological properties. Tribological tests were carried out with silicon counterpart sliding against ALD thin films in order to simulate the contacts occurring in the MEMS devices. The counterpart was sliding in a linear reciprocating motion against the ALD films with the total sliding distances of 5 and 20 m. Al2O3 and TiO2 coatings with different deposition temperatures were investigated in addition to Al2O3-TiO2-nanolaminate, TiN, NbN, TiAlCN, a-C:H [diamondlike car…

Al2O3 ALD films grown using TMA + rare isotope 2H216O and 1H218O precursors

2021

In this work hydrogen and oxygen migration and exchange reactions in the atomic layer deposited (ALD) Al2O3 thin films were studied together with hydrogen incorporation by varying deposition parameters. Al2O3 films deposited at low temperatures can contain more than 20 at. % of hydrogen. Both higher temperature and longer purge length decrease the hydrogen and carbon concentrations significantly. In order to track the hydrogen and oxygen movement in the films, heavy water (2H216O) and oxygen-18 enriched water (1H218O) were used as precursors in combination with trimethylaluminium (TMA). Different isotopes of the same element were quantified by means of time-of-flight elastic recoil detectio…

Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition

2022

Funding Information: This work was carried out within the MECHALD project funded by Business Finland and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (Ref. No. 251220) and Nuclear and Accelerator Based Physics (Ref Nos. 213503 and 251353) of the Academy of Finland. Publisher Copyright: © 2022 Author(s). In microelectromechanical system devices, thin films experience thermal processing at temperatures some cases exceeding the growth or deposition temperature of the film. In the case of the thin film grown by atomic layer deposition (ALD) at relatively low temperatures, post-ALD thermal processing or high device operation temperature might cause performance issues…

Decomposition rate and biochemical fate of carbon from natural polymers and microplastics in boreal lakes

2022

Microbial mineralization of organic compounds is essential for carbon recycling in food webs. Microbes can decompose terrestrial recalcitrant and semi-recalcitrant polymers such as lignin and cellulose, which are precursors for humus formation. In addition to naturally occurring recalcitrant substrates, microplastics have been found in various aquatic environments. However, microbial utilization of lignin, hemicellulose, and microplastics as carbon sources in freshwaters and their biochemical fate and mineralization rate in freshwaters is poorly understood. To fill this knowledge gap, we investigated the biochemical fate and mineralization rates of several natural and synthetic polymer-deri…

Atomic scale surface modification of TiO2 3D nano-arrays : plasma enhanced atomic layer deposition of NiO for photocatalysis

2021

Here we report the development of a new scalable and transferable plasma assisted atomic layer deposition (PEALD) process for the production of uniform, conformal and pinhole free NiO with sub-nanometre control on a commercial ALD reactor. In this work we use the readily available nickel precursor nickelocene in conjunction with O2 plasma as a co-reagent (100 W) over a temperature range of 75–325 °C. An optimised growth per cycle of 0.036 nm was obtained at 250 °C with uniform thickness and coverage on scale-up to and including an 6 inch Si wafer (with a 200 nm thermal SiO2 top layer). The bulk characteristics of the NiO thin films were comprehensively interrogated by PXRD, Raman spectrosco…

Structural and optical characterization of ZnS ultrathin films prepared by low-temperature ALD from diethylzinc and 1.5-pentanedithiol after various …

2019

The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant S excess. After annealing, the stoichiometry improved for annealing temperatures &ge