Search results for "schottky"

A hybrid method for calorimetry with subnanoliter samples using Schottky junctions

2007

A μm-scale calorimeter realized by using Schottky junctions as a thermometer is presented. Combined with a hybrid experimental method, it enables simultaneous time-resolved measurements of variations in both the energy and the heat capacity of subnanoliter samples.

CORROSION RESISTANCE OF DIFFERENT STAINLESS STEEL GRADES IN FOOD AND BEVERAGE INDUSTRY

2020

Analysis of Transition Metal Oxides based Heterojunction Solar Cells with S-shaped J-V curves

2020

The use of transition metal oxides for the selective carrier contact in the crystalline silicon solar cells technology is rising to interest for the excellent optoelectrical properties of these materials whose implementation, however, can result in lousy performing cells due to an S-shaped electrical characteristic. In this paper, we fabricated solar cells showing S-shaped J-V curve and carried out an analysis of the reasons of such behavior using a model involving the series of a standard cell equivalent circuit with a Schottky junction in order to explain these atypical performances. A good matching between the experimental measurements and the adopted theoretical model was obtained. The …

Application of superconductor-semiconductor Schottky barrier for electron cooling

2003

Abstract Electronic cooling in superconductor–semiconductor–superconductor structures at sub kelvin temperatures has been demonstrated. Effect of the carrier concentration in the semiconductor on performance of the micro-cooler has been investigated.

Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling

2001

Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor–semiconductor–superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron–phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect.

A Compact SPICE Model for Organic TFTs and Applications to Logic Circuit Design

2016

This work introduces a compact DC model developed for organic thin film transistors (OTFTs) and its SPICE implementation. The model relies on a modified version of the gradual channel approximation that takes into account the contact effects, occurring at nonohmic metal/organic semiconductor junctions, modeling them as reverse biased Schottky diodes. The model also comprises channel length modulation and scalability of drain current with respect to channel length. To show the suitability of the model, we used it to design an inverter and a ring oscillator circuit. Furthermore, an experimental validation of the OTFTs has been done at the level of the single device as well as with a discrete-…

300°C SiC Blocking Diodes for Solar Array Strings

2009

Silicon Carbide 300V-5A Ni and W Schottky diodes with high temperature operation capability (up to 300°C) have been fabricated. This paper reports on the stability tests (ESA space mission to Mercury, BepiColombo requirements) performed on these diodes. A DC current stress of 5A has been applied to these diodes at 270°C for 800 hours. These reliability tests revealed both, degradation at the Schottky interface (forward voltage drift) and at the diode top surface due to Aluminum diffusion (bond pull strength degradation). The use of W as Schottky metal allows eliminating the forward voltage drift producing stable metal–semiconductor interface properties. Nevertheless, SEM observations of the…

Buildup and structure of theInSe∕Ptinterface studied by angle-resolved photoemission and x-ray absorption spectroscopy

2006

The atomic structure and the electronic nature of the $\mathrm{In}\mathrm{Se}∕\mathrm{Pt}$ interface have been studied by x-ray absorption spectroscopy and angle-resolved photoemission, respectively. By these measurements, it has been found that Pt atoms equally incorporate into two trigonal-prismatic intralayer positions existing within the InSe layer, although, at low Pt coverage, Pt atoms seem to prefer one of these sites, where they have a lower interaction with Se atoms. The atomic structure of the $\mathrm{In}\mathrm{Se}∕\mathrm{Pt}$ interface appears to determine its electronic behavior as Pt deposition increases. At initial stages of Pt diffusion, isolated Pt atoms act as a surface …

Time-dependent current-voltage characteristics of Al/p-CdTe/Pt x-ray detectors

2012

Current-voltage (I-V) characteristics of Schottky Al/p-CdTe/Pt detectors were investigated in dark and at different temperatures. CdTe detectors with Al rectifying contacts, very appealing for high resolution x-ray and gamma ray spectroscopy, suffer from bias-induced polarization phenomena which cause current increasing with the time and severe worsening of the spectroscopic performance. In this work, we studied the time-dependence of the I-V characteristics of the detectors, both in reverse and forward bias, taking into account the polarization effects. The I-V measurements, performed at different time intervals between the application of the bias voltage and the measurement of the current…

Energy conversion efficiency in betavoltaic cells based on the diamond Schottky diode with a thin drift layer

2020

The HPHT diamond Schottky diode was assembled as a Metal/Intrinsic/p-doped structure betavoltaic cell (BC) with a very thin (1 μm) drift layer and tested under 5–30 keV electron beam irradiation using a scanning electron microscope (SEM). The effect of the β-radiation energy and the backscattering of electrons on the energy conversion was studied. From the results obtained, it is shown that, the efficiency of the investigated BC increases from 1.01 to 3.75% with the decrease of β-particle energy from 30 to 5 keV due to an increase of the electron beam absorption in a thin drift layer. Maximum efficiency is achieved when the electron beam energy is close to the average β-decay energy of 3H. …