Search results for "schottky"

Azido bridged binuclear copper(ii) Schiff base compound: synthesis, structure and electrical properties

2019

An azido bridged dinuclear complex [Cu(L−)(μ1,1N3)]2 (1) was synthesized by a 1 : 1 condensation of N-cyclohexyl-1,3-propanediamine and 5-bromosalicylaldehyde (HL). The complex was subsequently characterized based on elemental analyses, IR, single-crystal X-ray diffraction, a Hirshfeld study, FESEM, ESI-MS, powder XRD and also DFT studies successfully. The X-ray crystal structure of complex 1 revealed that the Cu(II) ion exhibited a definite five-coordinate square pyramidal coordination arrangement with a centro-symmetric μ 1,1-azido bridging in the end-on mode and formed a dimeric structure. The optical direct band gap of complex 1 was estimated to be 2.84 eV. The current–voltage character…

Amorphous semiconducting passive film-electrolyte junctions revisited. The influence of a non homogeneous density of state on the differential admitt…

2006

Abstract An analysis of the electronic properties of amorphous semiconductor-electrolyte junction is reported for passive films grown on Nb in alkaline solution and in a large range of thickness (~20nm ÷ ~250nm). A modelling of electronic density of state (DOS) has been carried out by fitting EIS spectra, at different potentials and in a range of frequencies (0.1 Hz ≤ f ≤100 kHz), and differential admittance (DA) data of a-Nb 2 O 5 /El interface. The fitting of EIS and DA curves was performed by using the theory of amorphous semiconductor Schottky barrier and a non-homogeneous DOS distribution.

A Critical Assessment of Mott-Schottky Analysis for the Characterisation of Passive Film-Electrolyte Junctions

2010

Characterization of Thin Passive Film-Electrolyte Junctions.The Amorphous Semiconductor (a-SC) Schottky Barrier Approach

2016

The knowledge of the solid-state properties of passive film is a preliminary task for a full understanding of the electron and ion transfer processes at the metal/oxide and oxide/electrolyte interface. Both processes are of paramount importance in determining the mechanism of film growth and dissolution as well as in determining the nature of the breakdown during the growth of anodic oxide films or the onset of generalized or localized corrosion process (1-2). With very few exceptions, it is a common belief, that most of anodic oxide films, grown on metals and alloys in aqueous solutions, display a semiconducting or insulating behaviour. It is also very well known that in many cases the ini…

A critical analysis of the theory of amorphous semiconductor Schottky barrier for oxides

2014

Electro-Optical characterization of Silicon Carbide Schottky photodiodes

2014

Responsivity measurements of SiC Schottky photodiodes

2014

We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV detectors employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm, respectively, based on the pinch-off surface effect.

Pd/Au/SiC Nanostructured Diodes for Nanoelectronics: Room Temperature Electrical Properties

2010

Pd/Au/SiC nanostructured Schottky diodes were fabricated embedding Au nanoparticles (NPs) at the metalsemiconductor interface of macroscopic Pd/SiC contacts. The Au NPs mean size was varied controlling the temperature and time of opportune annealing processes. The electrical characteristics of the nanostructured diodes were studied as a function of the NPs mean size. In particular, using the standard theory of thermoionic emission, we obtained the effective Schottky barrier height (SBH) and the effective ideality factor observing their dependence on the annealing time and temperature being the signature of their dependence on the mean NP size. Furthermore, plotting the effective SBH as a fu…

Room-Temperature Electrical Characteristics of Pd∕SiC Diodes with Embedded Au Nanoparticles at the Interface

2010

We investigate the effects of localized controlled nanometric inhomogeneities, represented by Au nanoparticles, on the electrical properties of Pd/SiC Schottky diodes. In particular, we investigate the effects of the nanoparticle radius R on the current-voltage characteristics. The main result concerns the strong dependence of the effective Schottky barrier height of the Pd/SiC contact on R, giving a practical technique to tailor, in a wide range, such a barrier height by simply changing the process parameters during the diode preparation. Then, from a basic understanding point of view, such data allow us to test the Tung model describing the effects of inhomogeneities on the electrical pro…

Solar blind detectors based on AlGaN grown on sapphire

2005

Solar blind detectors have been fabricated based on AlGaN heterostructures grown on sapphire by molecular beam epitaxy or chemical vapour deposition. MSM and Schottky detectors were investigated. High performance devices have been obtained thanks to an optimization of the material crystalline quality (including the suppression of cracks) and of the process. We show that the spectral limitations of MSM detectors are dictated by intrinsic phenomena that are analysed in details while the responsivity and detectivity also depends on the technological process with a special emphasis on the geometry of finger and contact pads. One and two dimensional arrays have been fabricated and preliminary re…