Search results for "semiconductor"
showing 10 items of 974 documents
Systematical, experimental investigations on LiMgZ (Z= P, As, Sb) wide band gap semiconductors
2011
This work reports on the experimental investigation of the wide band gap compounds LiMgZ (Z = P, As, Sb), which are promising candidates for opto-electronics and anode materials for Lithium batteries. The compounds crystallize in the cubic (C1_b) MgAgAs structure (space group F-43m). The polycrystalline samples were synthesized by solid state reaction methods. X-ray and neutron diffraction measurements show a homogeneous, single-phased samples. The electronic properties were studied using the direct current (DC) method. Additionally UV-VIS diffuse reflectance spectra were recorded in order to investigate the band gap nature. The measurements show that all compounds exhibit semiconducting be…
Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure
2016
The thermoelectric properties of n type semiconductor, TiNiSn is optimized by partial substitution with metallic, MnNiSb in the half Heusler structure. Herein, we study the transport properties and intrinsic phase separation in the system. The Ti1-xMnxNiSn1-xSbx alloys were prepared by arc-melting and were annealed at temperatures obtained from differential thermal analysis and differential scanning calorimetry results. The phases were characterized using powder X-ray diffraction patterns, energy dispersive X-ray spectroscopy, and differential scanning calorimetry. After annealing the majority phase was TiNiSn with some Ni rich sites and the minority phases was majorly Ti6Sn5, Sn, and MnSn2…
Prediction of Weak Topological Insulators in Layered Semiconductors
2012
We report the discovery of weak topological insulators by ab initio calculations in a honeycomb lattice. We propose a structure with an odd number of layers in the primitive unit-cell as a prerequisite for forming weak topological insulators. Here, the single-layered KHgSb is the most suitable candidate for its large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, forming two anisotropic Dirac cones. Though the stacking of even-layered structures leads to trivial insulators, the structures can host a quantum spin Hall layer with a large bulk gap, if an additional single layer exists as a stacking fault in the crystal. The reported honeycomb compounds can serve as…
Enhanced Reflectivity Change and Phase Shift of Polarized Light: Double Parameter Multilayer Sensor
2022
Herein, the concept of point of darkness based on polarized light phase difference and absorption of light is demonstrated by simulations using low refractive index and extinction coefficient semiconductor and dielectric, and high refractive index nonoxidizing metal multilayer thin film structures. Several multilayer sensor configurations show great sensitivity to thickness and refractive index variation of the detectable material by measuring the reflectivity ratio {\Psi} and phase shift {\Delta}. Focus is on such multilayers, which have sensitivity to both parameters ({\Psi}, {\Delta}) in the visible spectral range, thus opening the possibility for further research on a new biomedical sen…
The enhancement of ferromagnetism in uniaxially stressed diluted magnetic semiconductors
2003
We predict a new mechanism of enhancement of ferromagnetic phase transition temperature $T_c$ in uniaxially stressed diluted magnetic semiconductors (DMS) of p-type. Our prediction is based on comparative studies of both Heisenberg (inherent to undistorted DMS with cubic lattice) and Ising (which can be applied to strongly enough stressed DMS) models in a random field approximation permitting to take into account the spatial inhomogeneity of spin-spin interaction. Our calculations of phase diagrams show that area of parameters for existence of DMS-ferromagnetism in Ising model is much larger than that in Heisenberg model.
Temperature dependence of spin depolarization of drifting electrons in n-type GaAs bulks
2010
The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of spin polarization and relaxation, by taking into account intravalley and intervalley scattering phenomena of the hot electrons in the medium. Spin relaxation lengths and times are computed through the D'yakonov-Perel process, which is the more relevant spin relaxation mechanism in the regime of interest (10 < T < 300 K). The decay of the initial spin polarization of the conduction electrons is calculated as a function of the distance in the presence of…
Heusler Compounds—A Material Class With Exceptional Properties
2011
The class of Heusler compounds, including the XYZ and the X2YZ compounds, has not only an endless number of members, but also a vast variety of properties can be found in this class of materials, ranging from semiconductors, half-metallic ferromagnets, superconductors, and topological insulators to shape memory alloys. With this review article, we would like to provide an overview of Heusler compounds, focusing on their structure, properties, and potential applications.
Drift Modeling of Electrically Controlled Nanoscale Metal–Oxide Gas Sensors
2008
Gas sensors with small dimensions offer the advantage of electrical sensitivity modulation. However, their actual use is hindered by drift effects that exceed those of usual metal-oxide sensors. We analyzed possible causes and found the best agreement of experimental data with the model of internal dopant fluctuations. The dopants are oxygen vacancies exhibiting high drift-diffusion coefficients under the impact of electrical fields. Thus, the width parameters of space charge regions, which again control the sensor current, are undergoing slow changes. Moreover, the dopant distributions cause internal electrical fields that yield drift even after voltage switch-off. This behavior has been p…
New Heusler Compounds and Their Properties
2013
Spintronics is a multidisciplinary field and a new research area. New materials must be found for satisfying the different types of requirement. The search for stable half-metallic ferromagnets and ferromagnetic semiconductors with Curie temperatures higher than room temperature is still a challenge for solid state scientists. A general understanding of how structures are related to properties is a necessary prerequisite for material design. Computational simulations are an important tool for a rational design of new materials. The new developments in this new field are reported from the point of view of material scientists.
WS2/MoS2 Heterostructures through Thermal Treatment of MoS2 Layers Electrostatically Functionalized with W3S4 Molecular Clusters
2020
The preparation of 2D stacked layers that combine flakes of different nature, gives rise to countless number of heterostructures where new band alignments, defined at the interfaces, control the electronic properties of the system. Among the large family of 2D/2D heterostructures, the one formed by the combination of the most common semiconducting transition metal dichalcogenides WS2/MoS2, has awaken great interest due to its photovoltaic and photoelectrochemical properties. Solution as well as dry physical methods have been developed to optimize the synthesis of these heterostructures. Here a suspension of negatively charged MoS2 flakes is mixed with a methanolic solution of a cationic W3S…