Search results for "semiconductor"

Phonon Scattering through a Local Anisotropic Structural Disorder in the Thermoelectric Solid Solution Cu_2Zn_(1−x)Fe_xGeSe_4

2013

Inspired by the promising thermoelectric properties of chalcopyrite-like quaternary chalcogenides, here we describe the synthesis and characterization of the solid solution Cu(2)Zn(1-x)Fe(x)GeSe(4). Upon substitution of Zn with the isoelectronic Fe, no charge carriers are introduced in these intrinsic semiconductors. However, a change in lattice parameters, expressed in an elongation of the c/a lattice parameter ratio with minimal change in unit cell volume, reveals the existence of a three-stage cation restructuring process of Cu, Zn, and Fe. The resulting local anisotropic structural disorder leads to phonon scattering not normally observed, resulting in an effective approach to reduce th…

Electron–phonon effects on the direct band gap in semiconductors: LCAO calculations

2002

Abstract Using a perturbative treatment of the electron–phonon interaction, we have studied the effect of phonons on the direct band gap of conventional semiconductors. Our calculations are performed in the framework of the tight-binding linear combination of atomic orbitals (LCAO) approach. Within this scheme we have calculated the temperature and isotopic mass dependence of the lowest direct band gap of several semiconductors with diamond and zincblende structure. Our results reproduce the overall trend of available experimental data for the band gap as a function of temperature, as well as give correctly the mass dependence of the band gap on isotopic. A calculation of conduction band in…

Rotating magnetic fields as a means to control the hydrodynamics and heat/mass transfer in the processes of bulk single crystal growth

1999

The report discusses the possibility of using different types of rotating magnetic fields (RMF) and combinations of these to control the hydrodynamics and heat/mass transfer in the processes of bulk semiconductor single crystal growth. Some factors contributing to the efficiency of RMF influence in different technologies are analysed. Their specific practical application is illustrated by some examples.

Semiconducting half-Heusler and LiGaGe structure type compounds

2009

Compounds with LiAlSi (half-Heusler) and LiGaGe structure types have been investigated by means of band structure calculations. The LiAlSi structure type is known as the half-Heusler structure type, whereas LiGaGe is a closely related hexagonal variant. A remarkable feature of some XYZ half-Heusler compounds with 8 and 18 valence electrons is, that despite being composed of only metallic elements, they are semiconductors. More than 100 semiconducting compounds within these structure types are known. LiGaGe compounds have an additional degree of freedom, namely the degree of puckering of the layers. These compounds can become semiconducting at a certain degree of puckering. Half-metallic beh…

Photoemission of electrons into electrolyte from cadmium oxide layers formed by anodic oxidation of undeformed and plastically deformed cadmium plates

1995

Studies of electron emission (external photoeffect) at the electrode/solution interface are an important part of contemporary photoelectrochemistry. The results of systematic studies of this phenomenon led to the formulation of fundamental relationships and to new methods for investigation of the physicochemical processes occurring at the electrode-electrolyte interface [1-4]. In particular, photoemission measurements enabled a number of parameters relating to the structure of the semiconductor/electrolyte interface to be determined. The photoemission current from semiconductors with many surface states to solutions with a sufficiently high electrolyte concentration is described by the well…

Oligothiophenes for Pattern Formation by Stamping

2003

Oligothiophene monomers with a fixed length varying from 3 to 5 thiophene rings were prepared by Stille coupling. They were functionalised with one or two methacrylate groups to allow polymerization and cross-linking. These monomers can be patterned with the help of soft silicon stamps (e.g., with the micro-injection moulding in capillaries process) on substrates like glass or flexible polymer foils. If a photoinitiator has been added, they can then be hardened by exposure to UV-light through the transparent stamp. Afterwards the stamp can be removed. This allows the preparation of several centimeters long oligothiophene lines of a width varying between 50 and 0.5 μm. These lines of semicon…

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

2019

This paper compares the metal/semiconductor barrier height properties of non-recessed Ti/Al/Ti and Ta/Al/Ta contacts on AlGaN/GaN heterostructures. Both contacts exhibited a rectifying behavior after deposition and after annealing at temperatures up to 550 &deg

Synthesis, Characterization, and Spectroscopy of Type-II Core/Shell Semiconductor Nanocrystals with ZnTe Cores

2005

Numerical Simulation of Thermal Effects in Electric Circuits via Energy Transport equations

2006

In this work we present the coupling of stationary energy-transport (ET) equations with Modified Nodal Analysis (MNA)-equations to model electric circuits containing semiconductor devices. The one-dimensional ET-equations are discretised in space by an exponential fitting mixed hybrid finite element approach to ensure current continuity and positivity of charge carriers. The discretised ET-equations are coupled to MNA-equations and the resulting system is solved with backwarddifference formulas. Numerical examples are shown for a test circuit containing a pn-diode, and the results are compared to those achieved using the drift-diffusion model to describe the semiconductor devices in the cir…

Chemical and Structural Trends in the Spin-Admixture Parameter of Organic Semiconductor Molecules

2019

Spin mixing in organic semiconductors is related to spin–orbit coupling (SOC). However, a detailed study analyzing the dependence of the spin-admixture parameter (γ) on structural and material para...