Search results for "semiconductor"
showing 10 items of 974 documents
Site-specific atomic order and band structure tailoring in the diluted magnetic semiconductor (In,Ga,Mn)As
2021
Physical review / B 103(7), 075107 (1-13) (2021). doi:10.1103/PhysRevB.103.075107
Facile fabrication of flower like self-assembled mesoporous hierarchical microarchitectures of In(OH)3 and In2O3: In(OH)3 micro flowers with electron…
2016
Abstract A template and capping-reagent free facile fabrication method for mesoporous hierarchical microarchitectures of flower-like In(OH) 3 particles under benign hydrothermal conditions is reported. Calcination of In(OH) 3 to In 2 O 3 with the retention of morphology is also described. Both In(OH) 3 and In 2 O 3 microstructures were analyzed with SEM, EDX, TEM and powder X-ray diffraction. The crystal sizes for In(OH) 3 and In 2 O 3 were calculated using the Scherrer equation. In In(OH) 3 the thin flakes at the periphery of micro flowers were electron beam sensitive. The mechanism of self-assembly process was analyzed as well.
Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices
2000
6 páginas, 6 figuras, 1 tabla.
Gas sensing properties of Zn-doped p-type nickel ferrite
2012
Abstract The influence of zinc ion to the NiFe2O4 p-type semiconductor gas response characteristics is demonstrated. For characterization of gas sensor material, synthesized by sol–gel auto combustion method, X-ray diffraction (XRD), scanning electron microscopy (SEM), DC resistance and impedance spectroscopy (IS) measurements were employed. The response change of Zn doped nickel ferrite is related to the interruption of hole hopping between nickel ions. This was improved by change of conductivity type with temperature and gas exposure.
Characterization By Electroreflectance Of Thin Films And Thin Film Interfaces In Layered Structures.
1987
This paper reports investigations of ZnS quasi-amorphous films by electroreflectance (ER). The films were produced by thermal evaporation and their structure determined by electron diffraction. A voltage Vo cos cut was applied through the film with two evaporated Al electrodes. A lock-in amplifier gave 2 signals, Sf at f=ω/2π frequency and S2f at 2f frequency. The S2f spectrum, characteristic of the centrosymmetric bulk component of the film, reveals tails of localized states typical of amorphous semi-conductors. The Sf spectrum, characteristic of the interface layers with broken centro-symmetry, reveals tails of impurity levels which we attributed to diffusion of the electrode metal into t…
<title>Holographic recording in amorphous chalcogenide semiconductor photoresists</title>
1998
The properties and mechanism of relaxation processes of holographic gratings in amorphous chalcogenide semiconductor films have been studied. The possibilities of the practical applications of these materials as the photoresists for the production of the relief holograms and holographic optical elements are discussed. It is shown that the self- enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency of the holograms.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Elemental distribution and structural characterization of GaN/InGaN core-shell single nanowires by Hard X-ray synchrotron nanoprobes
2019
Improvements in the spatial resolution of synchrotron-based X-ray probes have reached the nano-scale and they, nowadays, constitute a powerful platform for the study of semiconductor nanostructures and nanodevices that provides high sensitivity without destroying the material. Three complementary hard X-ray synchrotron techniques at the nanoscale have been applied to the study of individual nanowires (NWs) containing non-polar GaN/InGaN multi-quantum-wells. The trace elemental sensitivity of X-ray fluorescence allows one to determine the In concentration of the quantum wells and their inhomogeneities along the NW. It is also possible to rule out any contamination from the gold nanoparticle …
Phonon-induced optical superlattice
2005
We demonstrate the formation of a dynamic optical superlattice through the modulation of a semiconductor microcavity by stimulated acoustic phonons. The high coherent phonon population produces a folded optical dispersion relation with well-defined energy gaps and renormalized energy levels, which are accessed using reflection and diffraction experiments.
<title>Relaxation processes in amorphous As-S and As-Se films</title>
1997
The relaxation of optical, mechanical and chemical properties of as-evaporated amorphous As-S and As-Se films while storing them at room temperature is investigated. The AsxS1-x films with arsenic content 0.3 less than x less than 0.4 are found to undergo maximal changes. It is shown that the phenomenon of dark self-enhancement of holograms (an increase of diffraction efficiency over time without any special treatment) can be used as an efficient method for investigation of relaxation processes in the amorphous chalcogenide films. The changes of diffraction efficiency in amorphous As2S3 films have been measured as a function of aging time and recording light intensity. The relaxation proces…
Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure
2014
In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB(2)X(4) ordered-vacancy compounds and exhibits a tetragonal defect chalcopyrite structure. X-ray diffraction measurements at room temperature have been performed under compression up to 15.1 GPa in a diamond anvil cell. Our measurements have been complemented and compared with ab initio total energy calculations. The axial compressibility and the equation of state of the low-pressure phase of HgGa2S4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The pres…