Search results for "semiconductor"
showing 10 items of 974 documents
Charge injection and trapping at perovskite interfaces with organic hole transporting materials of different ionization energies
2019
The extraction of photogenerated holes from CH3NH3PbI3 is crucial in perovskite solar cells. Understanding the main parameters that influence this process is essential to design materials and devices with improved efficiency. A series of vacuum deposited hole transporting materials (HTMs) of different ionization energies, used in efficient photovoltaic devices, are studied here by means of femtosecond transient absorption spectroscopy. We find that ultrafast charge injection from the perovskite into the different HTMs (<100 fs) competes with carrier thermalization and occurs independently of their ionization energy. Our results prove that injection takes place from hot states in the valence…
Growth and characterization of ZnO1−xSx highly mismatched alloys over the entire composition
2015
Alloys from ZnO and ZnS have been synthesized by radio-frequency magnetron sputtering over the entire alloying range. The ZnO1−xSx films are crystalline for all compositions. The optical absorption edge of these alloys decreases rapidly with small amount of added sulfur (x ∼ 0.02) and continues to red shift to a minimum of 2.6 eV at x = 0.45. At higher sulfur concentrations (x > 0.45), the absorption edge shows a continuous blue shift. The strong reduction in the band gap for O-rich alloys is the result of the upward shift of the valence-band edge with x as observed by x-ray photoelectron spectroscopy. As a result, the room temperature bandgap of ZnO1−xSx alloys can be tuned from 3.7 eV to …
Synthesis and characterization of GaN/ReS2, ZnS/ReS2 and ZnO/ReS2 core/shell nanowire heterostructures
2020
This research was funded by the ERDF project “Smart Metal Oxide Nanocoatings and HIPIMS Technology”, project number: 1.1.1.1/18/A/073. Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART².
Photo-induced electron transfer at nanostructured semiconductor–zinc porphyrin interface
2014
Abstract Electron transfer at metal oxide–organic dye interface on ZnO nanorod (ZnOr) templates was studied by femtosecond absorption spectroscopy method. Further confirmation of the electron transfer was obtained from photoelectrical studies. The fastest electron transfer from zinc porphyrin (ZnP) to semiconductor was observed for ZnOr modified by a 5 nm layer of TiO2 (
Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and…
2020
The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the presence or absence of InAlN superlattice underlayers (InAlN SL UL). The presence of the underlayer is found to remarkably increase the EL output power and the radiation tolerance of LEDs, which correlates with a much lower and more slowly changing density of deep traps in the QW region with radiation dose, and the higher lifetime of charge carriers, manifested by higher short-circuit current and open-circuit voltage in current–voltage characteristics under …
Magnetic Properties of Quinoidal Oligothiophenes: More Than Good Candidates for Ambipolar Organic Semiconductors?
2006
A series of quinoidal oligothiophenes have been investigated by means of solid-state Fourier-transform (FT)-Raman and electron spin resonance (ESR) spectroscopies complemented with density functional theory calculations. FT-Raman spectra recorded as a function of temperature show that, upon laser irradiation, the molecules undergo a reversible structural evolution from a quinoid-type pattern at low temperature to an aromatic-type pattern at high temperature. Moreover, ESR spectra show that a portion of these compounds exists in a biradical state at room temperature. These seemingly disconnected findings and others, such as conformational isomerism, are consistently explained by the consider…
Energy resolution and throughput of a new real time digital pulse processing system for x-ray and gamma ray semiconductor detectors
2013
New generation spectroscopy systems have advanced towards digital pulse processing (DPP) approaches. DPP systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog pulse processing electronics, ensuring higher flexibility, stability, lower dead time, higher throughput and better spectroscopic performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse shape and height analysis. X-ray and gamma ray spectra measurements with cadmium telluride (Cd…
Thin film growth and band lineup of In2O3 on the layered semiconductor InSe
1999
Thin films of the transparent conducting oxide In2O3 have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In2O3 and the layered semiconductor InSe. For thick In2O3 films a work function of φ = 4.3 eV and a surface Fermi level position of EF−EV = 3.0 eV is determined, giving an ionization potential IP = 7.3 eV and an electron affinity χ = 3.7 eV. The interface exhibits a type I band alignmen…
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
2018
This paper reports on the modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures, studied by means of Transmission Line Model (TLM) structures, morphological and structural analyses, as well as computer simulations. In particular, the contacts exhibited an Ohmic behaviour after annealing at 800 degrees C, with a specific contact resistance rho(c) = (2.4 +/- 0.2) x 10(-5) Omega cm(2), which was associated to morphological and structural changes of both the metal layer and the interface. Interestingly, TLM analyses gave a value of the sheet resistance under the contact (R-SK = 26.1 +/- 5.0 Omega/rectangle) significantly lower than that measured out…
Conductive films of ordered nanowire arrays
2004
peer-reviewed High-density, ordered arrays of germanium nanowires have been synthesised within the pores of mesoporous thin films (MTFs) and anodized aluminium oxide (AAO) matrices using a supercritical fluid solution-phase inclusion technique. Conductive atomic force microscopy (C-AFM) was utilised to study the electrical properties of the nanowires within these arrays. Nearly all of the semiconductor nanowires contained within the AAO substrates were found to be conducting. Additionally, each individual nanowire within the substrate possessed similar electrical properties demonstrating that the nanowires are continuous and reproducible within each pore. C-AFM was also able to probe the co…