Search results for "semiconductor"
showing 10 items of 974 documents
Size and emission wavelength control of InAs/InP quantum wires
2005
5 páginas, 5 figuras, 1 tabla.-- Comunicación presentada al E-MRS 2004 Spring Meeting celebrado en Estrasburgo (Francia) Mayo del 2004.
Room-temperature efficient light detection by amorphous Ge quantum wells
2013
In this work, ultrathin amorphous Ge films (2 to 30 nm in thickness) embedded in SiO2 layers were grown by magnetron sputtering and employed as proficient light sensitizer in photodetector devices. A noteworthy modification of the visible photon absorption is evidenced due to quantum confinement effects which cause both a blueshift (from 0.8 to 1.8 eV) in the bandgap and an enhancement (up to three times) in the optical oscillator strength of confined carriers. The reported quantum confinement effects have been exploited to enhance light detection by Ge quantum wells, as demonstrated by photodetectors with an internal quantum efficiency of 70%. © 2013 Cosentino et al.
Probing the magnetic properties of cobalt–germanium nanocable arrays
2005
We report the synthesis of high density arrays of coaxial nanocables, consisting of germanium nanowires surrounded by cobalt nanotube sheaths, within anodic aluminium oxide membranes. The nanocable arrays were prepared using a supercritical fluid inclusion process, whereby the cobalt nanotubes were first deposited on the pore walls of the nanoporous membranes and subsequently filled with germanium to form coaxial nanocables. The composition and structure of the metal–semiconductor nanostructures was investigated by electron microscopy, energy dispersive X-ray mapping and X-ray diffraction at high angles. The magnetic properties of the co-axial nanocables were probed using a superconducting …
Simulation of electronic states in a nanowire field-effect transistor
2015
De acuerdo con la ley empírica de Moore, el número de transistores en un circuito integrado se ve duplicado aproximadamente cada dos años. Una vez traspasada la frontera hacia la escala nanométrica, estos dispositivos comienzan a padecer efectos adversos al funcionamiento deseable de un transistor, como la pérdida de integridad eléctrica, efectos debidos a la corta longitud del canal o la falta de reproducibilidad. Las nanoestructuras cristalinas semiconductoras conocidas como nanohilos están emergiendo como candidatos prometedores para formar una nueva base alternativa de los transistores de efecto campo y continuar la miniaturización tecnológica en la escala nanométrica. Esto es debido al…
Fast and efficient procedures for determining the microwave noise parameters of HEMT's at decreasing temperatures
1998
Noise parameters are an electrical representation of the noise performance of transistors which is widely used in reliability studies as well as in the design of low-noise microwave amplifiers. Such parameters are usually determined by employing a complex indirect (standard) procedure based on multiple noise figure measurements and appropriate data processing techniques. We report here two altemative and rapid methods used to perform the complete noise characterization of HEMT's at decreasing temperatures over the 6 to 18 GHz frequency range. The results show a very satisfactory agreement.among the different procedures thus assessing the inherent consistency of the global approach to the pr…
Real time digital pulse processing for X-ray and gamma ray semiconductor detectors
2013
Abstract Digital pulse processing (DPP) systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog electronics, ensuring higher flexibility, stability, lower dead time and better spectroscopic performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse height and shape analysis. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors highlight the excellent performance of the system both at low and hi…
Conceptual design and infrastructure for the installation of the first AGATA sub-array at LNL
2011
WOS: 000295765100014
A Portable Readout System for Microstrip Silicon Sensors (ALIBAVA)
2009
A readout system for microstrip silicon sensors has been developed. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part a…
Interaction position resolution simulations and in-beam measurements of the AGATA HPGe detectors
2011
WOS: 000290082600015
The ion-guide isotope separator on-line at the Tohoku University Cyclotron
1987
Abstract The status of the ion-guide isotope separator on-line at the Tohoku University Cyclotron is reported. The optimum ion-guide parameters were determined from test experiments using atomic and molecular ions ionized with an electric discharge inside the target chamber as well as using 64 Ga(T 1 2 = 2.6 m ) ions produced by the 64Zn(p, n) reaction. Using the present system together with a ΔE−E plastic counter telescope and a germanium detector we identified 16 short-lived nuclei including the first mass-separated nuclei 57Cu and 45V. The efficiency of mass separation for 64Ga was ϵ ∼ 1%, where ϵ is defined as the number of atoms collected at the end of the separator divided by that rec…