Search results for "silicon"
showing 10 items of 1391 documents
Influence of vinyltriethoxysilane concentration on structural and luminescent characteristics of cerium doped yttrium based silicate phosphors
2015
Abstract Cerium doped yttrium silicates phosphors (YSO:Ce) were prepared by gel combustion using vinyltriethoxysilane (VTEOS) as silicon sources along with aspartic acid as fuel and yttrium-cerium nitrate as oxidizer. The study presents the influence of VTEOS amount in the synthesis mixture on the structural and luminescent characteristics of silicate phosphors. The understanding of precursor׳s decomposition was achieved on the basis of thermal analysis in association with gas evolved analysis. XRD, FTIR and XPS were used to reveal the structural changes that occur with VTEOS molar amount variation from 1 to 3 mol. It was found that the main crystalline phase was X2-Y 2 SiO 5 . The luminesc…
One-Dimensional Hypersonic Phononic Crystals
2010
We report experimental observation of a normal incidence phononic band gap in one-dimensional periodic (SiO(2)/poly(methyl methacrylate)) multilayer film at gigahertz frequencies using Brillouin spectroscopy. The band gap to midgap ratio of 0.30 occurs for elastic wave propagation along the periodicity direction, whereas for inplane propagation the system displays an effective medium behavior. The phononic properties are well captured by numerical simulations. The porosity in the silica layers presents a structural scaffold for the introduction of secondary active media for potential coupling between phonons and other excitations, such as photons and electrons.
WEAR PERFORMANCE OF CERAMIC CUTTING-TOOL MATERIALS WHEN CUTTING STEEL
1991
Abstract Some test cycles have been carried out in continuous cutting conditions, employing cutting parameters (feed, depth of cut and cutting speed) chosen following experimental planes and suitable test fields. The wear tests have been carried out on AISI 1040 steel with cutting speeds from 5m/sec to 11m/sec. The silicon nitride, sintered carbide, cubic boron nitride and alumina reinforced with SiC whiskers inserts, have shown, at each assigned cutting parameter, poor wear resistance when cutting steel. Alumina and alumina in submicron grain, which has been toughened by ZrO2 phase transformation, and the oxide-based alumina, have been the better wear resistance. The mixed based alumina ha…
Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
2017
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40nm) nitride spacers. As a result a single, silicide island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices fabricated using e-beam lithography is…
A model of biomass char gasification describing the change in catalytic activity of ash
2012
A comprehensive description of catalytic effects during char gasification under various conditions relevant to biomass gasification was made. A three-parallel reaction model was proposed to describe the dynamic change in catalytic activity of ash during gasification of biomass char particles. Three different regimes of conversion were identified by analyzing char reactivity experiments conducted in a vertical TGA with nine biomasses under a wide range of operating conditions (temperature: 1023–1123 K, pressure: 0.1–3.0 MPa and gasification mixtures of CO2–CO–H2O–H2): (1) catalytic char gasification with deactivation of catalyst, (2) non-catalytic char gasification, and (3) catalytic char ga…
Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring
2014
We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 μm device pitch exhibits the best results, being the best compromise in terms of fu…
A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter
2014
This paper presents a comparison of the behavior of the intrinsic diode of silicon (Si) and silicon carbide (SiC) MOSFETs. The study was done for 1200 V Si and SiC MOSFETs. The data sheet from manufacturers shows the characteristics of MOSFET' intrinsic diode when gate source voltage (VGS) is 0 V. There are applications where the MOSFET' intrinsic diode is used while VGS is different than 0 V. One of these applications is induction heating, where depending on the load and the regulation system, the diode can conduct a significant part of the inverter current. In most applications which use the MOSFET' intrinsic diode, the turn ON of the intrinsic diode happens at VGS = 0 V. After a blanking…
Silicon germanium platform enabling mid-infrared to near-infrared conversion for telecom and sensing applications
2014
This paper presents the potential of silicon germanium waveguides in the nonlinear conversion of light from mid-infrared wavelengths to the telecom band utilizing four-wave mixing. Design aspects and first characterization results of fabricated devices are presented.
Performance of sensl C-Series SiPM with high photoelectron resolution at cryogenic temperatures
2016
The C-Series of silicon photomultipliers (SiPM) from SensL provides devices with a fast response and high performance at low cost. The device's ability to detect light at temperatures of liquid nitrogen (77K) and liquid helium (4 K) with high photoelectron resolution was demonstrated. Results include relative photon detection efficiency (PDE), gain, microcell capacitance, and cross-talk probability at different over-voltages, both at room and at cryogenic temperatures. At 77K the SiPM demonstrated significantly improved operating characteristics while at 4K the observed increase in break-down voltage, the reduction of PDE by a factor of 2-3, and the extensively dropped microcell capacitance…
High Quality Factor Silicon Membrane Metasurface for Intensity-Based Refractive Index Sensing
2021
We propose a new sensing device based on all-optical nano-objects placed in a suspended periodic array. We demonstrate that the intensity-based sensing mechanism can measure environment refractive index change of the order of 1.8×10−6, which is close to record efficiencies in plasmonic devices.