Search results for "switching"
showing 10 items of 288 documents
Q-switching of an erbium-doped fibre laser modulated by a Bragg grating fixed to a piezoelectric
2003
The performance of the Q-switched erbium-doped fibre laser with two fibre Bragg gratings as cavity mirrors was theoretically analysed, employing a set of rate equations for the ion populations and the photon flux inside the cavity. The simulation considers a system where the pulsed laser emission is produced by the temporal modulation of a Bragg grating fixed to a piezoelectric and operating in the 1550 nm spectral region. The temporal evolution of different frequency components of the laser emission produced is governed by the instantaneous overlap between the two gratings. Theoretical results are in agreement with previously reported experimental values.
Design and realization of a portable multichannel continuous wave fNIRS
2014
A design and implementation of a portable functional Near InfraRed Spectroscopy embedded system prototype is described. In this theoretical and experimental work, we present an embedded system hosting 64 LED sources and 128 Silicon PhotoMultiplier detectors (SiPM). The elementary part of the structure is a flexible probe “leaf” consisting of 16 SiPMs, 4 couples of LEDs, each operating at two wavelengths, and a temperature sensor. The hardware system is based on an ARM main microcontroller that allows to perform both the switching time of LEDs and the acquisition of the SiPM outputs. The performed preliminary experimental tests achieved very promising results, thus demonstrating the effectiv…
Photo-switching and -cyclisation of hydrogen bonded liquid crystals based on resveratrol
2020
A series of hydrogen-bonded liquid crystals based on resveratrol and resveratrone is reported and investigated with respect to their photo-switchability (at 405 nm) and photo-cyclisation (at 300 nm).
Laser ablation of a turbid medium : Modeling and experimental results.
2006
International audience; Q -switched Nd:YAG laser ablation of a turbid medium (paint) is studied. The optical properties (absorption coefficient, scattering coefficient, and its anisotropy) of a paint are determined with a multiple scattering model (three-flux model), and from measurements of reflection-transmission of light through thin layers. The energy deposition profiles are calculated at wavelengths of 532 nm and 1.064 $\mu$m. They are different from those described by a Lambert-Beer law. In particular, the energy deposition of the laser beam is not maximum on the surface but at some depth inside the medium. The ablated rate was measured for the two wavelengths and compared with the en…
Photo-switching spin pairs—synergy between LIESST effect and magnetic interaction in an iron(ii) binuclear spin-crossover compound
2001
The decrease of the magnetic response under irradiation at very low temperature was interpreted as a new evidence of synergy between magnetic interaction and spin transition in an iron(II) binuclear SC compound. Real Cabezos, Jose Antonio, Jose.A.Real@uv.es
Dielectric-loaded plasmonic waveguide components: Going practical
2013
Surface plasmon propagating modes supported by metal/dielectric interfaces in various configurations can be used for radiation guiding similarly to conventional dielectric waveguides. Plasmonic waveguides offer two attractive features: subdiffraction mode confinement and the presence of conducting elements at the mode-field maximum. The first feature can be exploited to realize ultrahigh density of nanophotonics components, whereas the second feature enables the development of dynamic components controlling the plasmon propagation with ultralow signals, minimizing heat dissipation in switching elements. While the first feature is yet to be brought close to the domain of practical applicatio…
Resistive switching in microscale anodic titanium dioxide-based memristors
2018
Licence CC BY-NC-ND The potentiality of anodic TiO2 as an oxide material for the realization of resistive switching memory cells has been explored in this paper. Cu/anodic-TiO2/Ti memristors of different sizes, ranging from 1 × 1 μm2 to 10 × 10 μm2 have been fabricated and characterized. The oxide films were grown by anodizing Ti films, using three different process conditions. Measured IV curves have shown similar asymmetric bipolar hysteresis behaviors in all the tested devices, with a gradual switching from the high resistance state to the low resistance state and vice versa, and a R_OFF/R_ON ratio of 80 for the thickest oxide film devices.
Nd:YVO4 crystalline film grown by pulsed laser deposition
2009
Abstract We present the preliminary results obtained in the growth of thin films of Nd-doped YVO4 (YVO) by pulsed laser deposition (PLD) on amorphous substrate. The films were obtained by ablating bulk YVO crystals doped with Nd3+ ions with a Q-switched tripled Nd:YAG laser in a UHV chamber. The samples have been characterized both morphologically (with X-ray diffraction and atomic force microscope measurements) and spectroscopically, by measuring fluorescence spectra and lifetime.
Ferroelectric liquid-crystalline elastomers
1994
Oriented liquid-crystalline (LC) elastomers (polar monodomains, concerning the direction of polarisation) have been prepared from polar monodomains of ferroelectric LC-polysiloxanes by a radical photocrosslinking process. Attempts to perform ferroelectric switching lead in these soft elastomers to an elastic stress which prohibits—for low voltages—a complete reorientation of the polar axis (ferroelectric switching). A ferroelectric switching can, however, be observed for high voltages. The loop of hysteresis of this switching is asymmetric concerning the zero point of the driving voltage. Piezoelectric measurements show that these elastomers combine an elastic memory for one polar state wit…
Electrochemical Tantalum Oxide for Resistive Switching Memories
2017
Redox-based resistive switching memories (ReRAMs) are strongest candidates for the next-generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta2O5-based devices by anodizing. This method allows to grow high-quality and dense oxide thin films onto a metal…