Search results for "thin film"
showing 10 items of 1200 documents
Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films
2018
We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The detected angular-dependent longitudinal and transverse magnetoresistances are measured by rotating the sample in magnetic fields up to 11 T, along three orthogonal planes (xy-, yz- and xz-rotation planes, where the z-axis is orthogonal to the sample plane). The total magnetoresistance has contributions arising from both the SMR and ordinary magnetoresistance. The onset of the SMR signal occurs between 1 and 3 T and no saturation is visible up to 11 T. Th…
Imaging of current induced Néel vector switching in antiferromagnetic Mn 2 Au
2019
The effects of current induced N\'eel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We observed current induced switching of AFM domains essentially corresponding to morphological features of the samples. Reversible as well as irreversible N\'eel vector reorientation was obtained in different parts of the samples and the switching of up to 30 % of all domains in the field of view of 10 $\mu$m is demonstrated. Our direct microscopical observations are compared to and fully consistent with anisotropic magnetoresistance effects previously attribu…
Mechanism of Néel Order Switching in Antiferromagnetic Thin Films Revealed by Magnetotransport and Direct Imaging.
2019
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
Thermal generation of spin current in epitaxial CoFe2O4 thin films
2016
The longitudinal spin Seebeck effect (LSSE) has been investigated in high-quality epitaxial CoFe2O4 (CFO) thin films. The thermally excited spin currents in the CFO films are electrically detected in adjacent Pt layers due to the inverse spin Hall effect (ISHE). The LSSE signal exhibits a linear increase with increasing temperature gradient, yielding a LSSE coefficient of ~100 nV/K at room temperature. The temperature dependence of the LSSE is investigated from room temperature down to 30 K, showing a significant reduction at low temperatures, revealing that the total amount of thermally generated magnons decreases. Furthermore, we demonstrate that the spin Seebeck effect is an effective to…
Clean and ordered surfaces of CeNi 2 Ge 2 layers on W(110)
1997
Investigations of the geometric and electronic properties of ternary Ce-based heavy fermion systems CeT2X2 (T : Ni,Pd,Rh; X : Ge,Si) were carried out by means of electron spectroscopic methods. The main problem for these surface-sensitive techniques is the preparation of well-ordered and atomically clean surfaces. The ternary substance CeNi2Ge2 was grown on a W(110) substrate by MBE with subsequent annealing. A nearly layer-by-layer growth mode was detected using MEED. The annealed layers are ordered, but show small Ni2Ge crystalline islands. The composition was characterised by means of AES in dependence of the substrate as well as the annealing temperature. Electronic properties are inves…
Magnetization states in ultrathin films with laterally modulated anisotropies
1998
Abstract Micromagnetic theory has been applied to a model system for ultrathin films with laterally modulated anisotropies, consisting of a periodic array of stripes with alternating uniaxial anisotropies. Despite of the discontinuous change of anisotropy, the magnetization direction only changes on a lateral scale given by the exchange length. If the width of one of the two alternating stripes is reduced below a critical value, the magnetization will switch into a uniform state. The variation of the critical width with period, anisotropy constants, exchange constant, and film thickness has been determined using an analytic approach. Non-uniform magnetization states and the magnetization re…
Field dependence of spin and orbital moments of Fe in L10 FePt magnetic thin films
2006
Abstract The field dependence of spin and orbital magnetic moments of Fe in L10 FePt magnetic thin films was investigated using X-ray magnetic circular dichroism (XMCD). The spin and orbital moments were calculated using the sum rules; it was found that the spin and orbital moment of Fe in L10 FePt films are ∼2.5 and 0.2 μB, respectively. The relative XMCD asymmetry at Fe L3 peak on the dependence of applied field suggested that the majority magnetic moment of L10 FePt films resulted from Fe.
Investigation of Elemental Magnetic Moments of CoCrPt Films Using X-Ray Magnetic Circular Dichroism
2006
The elemental magnetic moments of Co and Cr in CoCrPt films were investigated using xray magnetic circular dichroism (XMCD). The spin and orbital moments of Co was calculated using the sum rules; it was found that the magnetic moment of Co in CoCrPt films was dominated by spin moment contribution. The total magnetic moment of Co was found to be lower than that of bulk Co. Further, the Cr moment was aligned anti-ferromagnetically with respect to Co, resulting in a decrease of saturation magnetization (Ms) in CoCrPt films.
Continuous theory of switching in geometrically confined ferroelectrics
2014
A theory of ferroelectric switching in geometrically confined samples like thin films and multilayers with domain structure has been proposed. For that we use Landau–Khalatnikov (LK) equations with free energy functional being dependent on polarization gradients. In this case, the consistent theory can be developed as for thin ferroelectric films and multilayers the domain structure reduces to Fourier series in ferroelectric polarization. The specific calculations are presented for thin film ferroelectric with dead layers and ferro-/paraelectric multilayer. Our theory is generalizable to ferroelectrics and multiferroics with other geometries.
Transport Properties of Co2(Mn, Fe)Si Thin Films
2013
Thin Heusler films with the composition Co2Mn1−x Fe x Si were grown by both sputter and pulsed laser deposition. The samples show a high degree of structural order and very good magnetic properties. The availability of thin film samples on dielectric substrates allowed the systematic investigation of their electronic properties by transport experiments. The normal Hall effect shows a transition from a hole-like charge transport in Co2MnSi to an electron-like transport in Co2FeSi. This is in agreement with calculations, which predict that the substitution of Mn by Fe leads to a band filling and a shift of the Fermi energy. Furthermore, the behavior of the anomalous Hall effect was studied. I…