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RESEARCH PRODUCT
Mechanism of Néel Order Switching in Antiferromagnetic Thin Films Revealed by Magnetotransport and Direct Imaging.
Francesco MaccherozziEiji SaitohSergio ValenciaOlena GomonayJairo SinovaRafael RamosM. FilianinaAndrew RossLorenzo BaldratiRomain LebrunFelix FuhrmannC. LeveilleMathias KläuiFlorian KronastT. R. Forrestsubject
Condensed Matter - Materials ScienceMaterials scienceMagnetoresistanceCondensed matter physicsMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciencesGeneral Physics and AstronomyLarge scale facilities for research with photons neutrons and ionsDirect imaging01 natural sciences3. Good healthMagnetic anisotropyOrder (biology)Domain wall (magnetism)0103 physical sciencesTorqueAntiferromagnetismCondensed Matter::Strongly Correlated ElectronsThin film010306 general physicsSpin-½description
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-10-24 | Physical Review Letters |