Search results for "thin film"

showing 10 items of 1200 documents

On thermal influence of laser beam irradiation on optical absorption of amorphous as-evaporated As2S3 films

1998

Abstract Photoinduced changes of the optical absorption in amorphous as-evaporated As 2 S 3 thin films are studied. Before the measurements films were kept at dark for more than two years. The long storage time ensured that the relaxational structural changes caused by the deposition process were absent. As a light source a CW unfocused 488.0 nm Ar laser line was used. The intensity of the laser beam was varied from rather low intensity values up to intensities which raised the temperature of the films above the glass transition temperature. Based on the behavior of the saturation values of the absorption we were able to state that the exposed As 2 S 3 films started to polymerize at 63–69°C…

Materials scienceAbsorption spectroscopybusiness.industryAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsAmorphous solidLight intensityOpticsIrradiationElectrical and Electronic EngineeringPhysical and Theoretical ChemistryThin filmbusinessGlass transitionAbsorption (electromagnetic radiation)Saturation (magnetic)Optics Communications
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Optical determination of the oxygen content of YBa2Cu3O6+x thin films by IR reflectance and transmittance measurements

2001

Abstract Recent studies of the optical properties of YBa2Cu3O6+x (YBCO) single crystals by several authors have shown that the optical conductivity in the infrared spectral region is a sensitive function of the oxygen content of the samples. Infrared spectroscopy thus offers a possibility for oxygen concentration analysis and is an alternative to other methods such as (i) the X-ray determination of the length of the c-axis and (ii) spectroscopic ellipsometry at an electronic transition band centered around 4.1 eV whose strength decreases with increasing oxygen content. We explore the applicability of the IR optical method for the case of YBCO thin films of about 300 nm thickness which are e…

Materials scienceAbsorption spectroscopybusiness.industryEnergy Engineering and Power TechnologyInfrared spectroscopyCondensed Matter PhysicsOptical conductivityElectronic Optical and Magnetic MaterialsOpticsAttenuation coefficientTransmittanceOptoelectronicsElectrical and Electronic EngineeringThin filmbusinessPenetration depthRefractive indexPhysica C: Superconductivity
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Correlation of local disorder and electronic properties in the Heusler alloy Co2Cr0.6Fe0.4Al

2007

For the fully ordered Heusler alloy Co2Cr0.6Fe0.4Al half-metallic ferromagnetism has been predicted. Local disorder other than the Al–Cr/Fe (B2)-type disorder is known to destroy the half-metallic bandgap. The usage of appropriate buffer layers improves the structural quality of thin films. We correlate the structural properties of thin magnetron sputtered films determined by x-ray diffraction with details of the x-ray magnetic circular dichroism spectra. From the value of the magnetic moment located at the Cr atom and features of the Co absorption spectra we conclude that the buffer layers lead also to an improvement in the local atomic order. The atomic ordering gradually approaches the l…

Materials scienceAcoustics and UltrasonicsAbsorption spectroscopyMagnetic momentCondensed matter physicsMagnetic circular dichroismBand gapAlloyengineering.materialCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceFerromagnetismAtomengineeringThin filmJournal of Physics D: Applied Physics
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Epitaxial Mn2Au thin films for antiferromagnetic spintronics

2015

Mn2Au is one of the few candidate materials for antiferromagnetic spintronics requiring ordered metals with a high Neel-temperature and strong spin–orbit coupling. We report the preparation of epitaxial Mn2Au thin films by rf-sputtering. Structural characterization by x-ray and electron diffraction demonstrates a high degree of atomic order and the temperature dependence of the resistivity is typical for a good metal. The magnetic properties of the samples are studied by the investigation of Mn2Au/Fe bilayers. Exchange bias effects are observed, which present strong evidence for antiferromagnetic order in the Mn2Au thin films. Small domains of 500 nm are visualized in the exchange coupled F…

Materials scienceAcoustics and UltrasonicsCondensed matter physicsSpintronicsMagnetismCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceExchange biasElectron diffractionSputteringElectrical resistivity and conductivityAntiferromagnetismCondensed Matter::Strongly Correlated ElectronsThin filmJournal of Physics D: Applied Physics
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Thickness dependence of anomalous Hall conductivity in L10-FePt thin film

2019

L10 ordered alloys are ideal models for studying the anomalous Hall effect (AHE), which can be used to distinguish the origin from intrinsic (from band structure) or from extrinsic effects (from impurity scatterings). In the bulk limit of L10 ordered FePt films, the AHE is considered to be dominated by the intrinsic contribution, which mainly comes from the strong spin-orbit interaction (SOI) of Pt atoms and exchange-splitting of Fe atoms. The study of anomalous Hall conductivity (AHC) of L10-FePt thin films is of particular interest for its application in spintronic devices. In order to reduce the effects of defects such as grain boundaries, we chose SrTiO3 as the substrate which has a ver…

Materials scienceAcoustics and UltrasonicsPhonon scatteringCondensed matter physicsSpintronics02 engineering and technologySpin–orbit interaction021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsHall effect0103 physical sciencesGrain boundaryBerry connection and curvatureThin film010306 general physics0210 nano-technologyElectronic band structureJournal of Physics D: Applied Physics
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Studies on atomic layer deposition of MOF-5 thin films

2013

International audience; Deposition of MOF-5 thin films from vapor phase by atomic layer deposition (ALD) was studied at 225-350 degrees C. Zinc acetate (ZnAc2) and 1,4-benzenedicarboxylic acid (1,4-BDC) were used as the precursors. The resulting films were characterized by UV-Vis spectrophotometry, Fourier transform infrared spectroscopy (FTIR), optical microscopy, X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), time-of-flight elastic recoil detection analysis (TOF-ERDA), isopropanol adsorption tests, and nanoindentation. It was found out that the as-deposited films were amorphous but crystallized in humid conditions at room temperature. The crystalline films h…

Materials scienceAnalytical chemistry02 engineering and technologyChemical vapor deposition010402 general chemistry01 natural sciencesAtomic layer depositionGeneral Materials ScienceThin filmFourier transform infrared spectroscopyta116ta114General Chemistry[CHIM.MATE]Chemical Sciences/Material chemistryNanoindentationMetal-organic frameworks021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical sciencesAmorphous solidElastic recoil detectionCarbon filmMOF-5Mechanics of MaterialsALDHybrid materials0210 nano-technology
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Room-Temperature Cubic Phase Crystallization and High Stability of Vacuum-Deposited Methylammonium Lead Triiodide Thin Films for High-Efficiency Sola…

2019

Methylammonium lead triiodide (MAPI) has emerged as a high-performance photovoltaic material. Common understanding is that at room temperature it adopts a tetragonal phase and it only converts to the perfect cubic phase around 50-60 ºC. Most MAPI films are prepared using a solution-based coating process, yet they can also be obtained by vapor phase deposition methods. Vapor phase processed MAPI films have significantly different characteristics compared to their solvent processed analogous, such as a relatively small crystal grain sizes and short excited state lifetimes. Yet solar cells based on vapor phase processed MAPI films exhibit high power conversion efficiencies. Surprisingly, after…

Materials scienceAnalytical chemistry02 engineering and technologyCubic crystal system010402 general chemistry7. Clean energy01 natural scienceslaw.inventionchemistry.chemical_compoundTetragonal crystal systemlawPhase (matter)Deposition (phase transition)General Materials ScienceThin filmTriiodideCrystallizationMaterialsCèl·lules fotoelèctriquesPerovskite (structure)Mechanical Engineering021001 nanoscience & nanotechnology0104 chemical scienceschemistryMechanics of Materials0210 nano-technology
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Relation between molecule ionization energy, film thickness and morphology of two indandione derivatives thin films

2016

Abstract Nowadays most organic devices consist of thin (below 100 nm) layers. Information about the morphology and energy levels of thin films at such thickness is essential for the high efficiency devices. In this work we have investigated thin films of 2-(4-[N,N-dimethylamino]-benzylidene)-indene-1,3-dione (DMABI) and 2-(4-(bis(2-(trityloxy)ethyl)amino)benzylidene)-2H-indene-1,3-dione (DMABI-6Ph). DMABI-6Ph is the same DMABI molecule with attached bulky groups which assist formation of amorphous films from solutions. Polycrystalline structure was obtained for the DMABI thin films prepared by thermal evaporation in vacuum and amorphous structure for the DMABI-6Ph films prepared by spin-coa…

Materials scienceAnalytical chemistry02 engineering and technologyGeneral Chemistry010402 general chemistry021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciences0104 chemical sciencesAmorphous solidElectrodeMoleculeGeneral Materials ScienceVacuum levelCrystalliteIonization energyThin film0210 nano-technologySpectroscopyJournal of Physics and Chemistry of Solids
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Frequency dependent conductivity in YBa2Cu3O7-δ (δ≈0) thin films

1992

Materials scienceAnalytical chemistryConductivityThin film
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XRD and micro Raman characterization of epitaxial Bi-2201, Bi-2212 and Bi-2223 thin films

1997

Copyright (c) 1997 Elsevier Science B.V. All rights reserved. Micro Raman characterization is performed on high quality thin films of Bi 2 Sr 2 CuO 6+x (2201), Bi 2 Sr 2 CaCu 2 O 8+x (2212), Bi 2 Sr 2 Ca 2 Cu 3 O 10+x (2223) made by dc-sputtering. Single crystal X-ray measurements reveal the full epitaxy of the films, which allows for polarized Raman spectra to be obtained.

Materials scienceAnalytical chemistryEnergy Engineering and Power TechnologyLattice vibrationCondensed Matter PhysicsEpitaxyElectronic Optical and Magnetic MaterialsCharacterization (materials science)symbols.namesakeMicro ramansymbolsCathode sputteringElectrical and Electronic EngineeringThin filmRaman spectroscopySingle crystalPhysica C: Superconductivity
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