Search results for "threshold voltage"
showing 4 items of 24 documents
Radiation effects in nitride read-only memories
2010
Abstract We report on the influence of different types of radiation on the nitride read-only memories (NROM®). The memory cells were irradiated by light ions (Boron), X-rays and γ-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM® cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remai…
Fluoride-Induced Negative Differential Resistance in Nanopores: Experimental and Theoretical Characterization
2021
We describe experimentally and theoretically the fluoride-induced negative differential resistance (NDR) phenomena observed in conical nanopores operating in aqueous electrolyte solutions. The threshold voltage switching occurs around 1 V and leads to sharp current drops in the nA range with a peak-to-valley ratio close to 10. The experimental characterization of the NDR effect with single pore and multipore samples concern different pore radii, charge concentrations, scan rates, salt concentrations, solvents, and cations. The experimental fact that the effective radius of the pore tip zone is of the same order of magnitude as the Debye length for the low salt concentrations used here is su…
Importance of the Window Function Choice for the Predictive Modelling of Memristors
2021
Window functions are widely employed in memristor models to restrict the changes of the internal state variables to specified intervals. Here, we show that the actual choice of window function is of significant importance for the predictive modelling of memristors. Using a recently formulated theory of memristor attractors, we demonstrate that whether stable fixed points exist depends on the type of window function used in the model. Our main findings are formulated in terms of two memristor attractor theorems, which apply to broad classes of memristor models. As an example of our findings, we predict the existence of stable fixed points in Biolek window function memristors and their absenc…
Enhanced Thin-Film Transistor Performance by Combining 13,6-N-Sulfinylacetamidopentacene with Printed PEDOT:PSS Electrodes
2011
Bottom-contact/bottom-gate organic thin-film transistors (OTFTs) are fabricated using a soluble pentacene precursor (13,6-N-sulfinylacetamidopentacene; SAP) and inkjet printed PEDOT:PSS electrodes on bare SiO2 dielectrics. Saturation mobility, Ion/Ioff ratio, and threshold voltage parameters, respectively, of 0.27 cm2 V−1 s−1, 105, and −4.25 V were measured under ambient conditions after the thermal conversion of SAP to pentacene in 100 μm long channel OTFT devices. The results obtained by the above solution approach are comparable to that of vapor-phase grown pentacene-based OTFTs with photolithographic gold contacts and organic buffer layers and/or inorganic injection layers. The present …