Search results for "threshold"
showing 10 items of 688 documents
Analysis of multipactor RF breakdown in a waveguide containing a transversely magnetized ferrite
2016
In this paper, the multipactor RF breakdown in a parallel-plate waveguide partially filled with a ferrite slab magnetized normal to the metallic plates is studied. An external magnetic field is applied along the vertical direction between the plates in order to magnetize the ferrite. Numerical simulations using an in-house 3-D code are carried out to obtain the multipactor RF voltage threshold in this kind of structures. The presented results show that the multipactor RF voltage threshold at certain frequencies becomes considerably lower than for the corresponding classical metallic parallel-plate waveguide with the same vacuum gap
Rheological Percolation Threshold in High-Viscosity Polymer/CNTs Nanocomposites
2017
AbstractPolystyrene (PS)/multi-walled carbon nanotubes (CNT) nanocomposites have been prepared through melt mixing processing aiming at obtaining a uniform and homogeneous dispersion of the used nanoparticles within the polymeric matrix. Optical and scanning electron microscopy has been employed to determine the dispersion and distribution of CNTs at different length scales. Furthermore, the linear viscoelastic behavior of formulated nanocomposites has been deeply investigated. As a result of CNTs added, the nanocomposites experience a transition from liquid-like to solid-like rheological behavior, and a disappearance of relaxation processes at low frequency can be noticed. By plotting G’ v…
Pore structural characteristics, size exclusion properties and column performance of two mesoporous amorphous silicas and their pseudomorphically tra…
2007
Highly ordered mesoporous silicas such as, mobile composition of matter, MCM-41, MCM-48, and the SBA-types of materials have helped to a large extent to understand the formation mechanisms of the pore structure of adsorbents and to improve the methods of pore structural characterization. It still remains an open question whether the high order, the regularity of the pore system, and the narrow pore size distribution of the materials will lead to a substantial benefit when these materials are employed in liquid phase separation processes. MCM-41 type 10 microm beads are synthesized following the route of pseudomorphic transformation of highly porous amorphous silicas. Highly porous silicas a…
Effect of the Content and Ordering of the sp2 Free Carbon Phase on the Charge Carrier Transport in Polymer-Derived Silicon Oxycarbides
2020
The present work elaborates on the correlation between the amount and ordering of the free carbon phase in silicon oxycarbides and their charge carrier transport behavior. Thus, silicon oxycarbides possessing free carbon contents from 0 to ca. 58 vol.% (SiOC/C) were synthesized and exposed to temperatures from 1100 to 1800 °
Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals
2002
We have realized nanocrystal memories by using silicon quantum dots embedded in silicon dioxide. The Si dots with the size of few nanometers have been obtained by chemical vapor deposition on very thin tunnel oxides and subsequently coated with a deposited SiO2 control dielectric. A range of temperatures in which we can adequately control a nucleation process, that gives rise to nanocrystal densities of ∼3×1011 cm−2 with good uniformity on the wafer, has been defined. The memory effects are observed in metal-oxide-semiconductor capacitors or field effect transistors by significant and reversible flat band or threshold voltage shifts between written and erased states that can be achieved by …
Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memori…
2006
We study the role that the denuded zone around Si nanocrystals obtained by chemical vapor deposition plays on the fluctuations of the dot surface coverage. In fact, the capture mechanism of the silicon adatoms in the proximity of existing dots restricts the number of possible nucleation sites, the final dot size, and the dot position, thus driving the process toward partial self-order. We numerically evaluate the relative dispersion of surface coverage for several gate areas and compare the results to the fully random case. The coverage dispersion is related to the fluctuations from bit to bit of the threshold voltage window (Δ Vth) distribution of nanocrystal memories. The evaluations, com…
Controlling the mode of operation of organic transistors through side chain engineering
2016
Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode…
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…
Origin of the substrate current after soft-breakdown in thin oxide n-MOSFETs
1999
In this paper is presented an experimental investigation on the origin of the substrate current after soft-breakdown in n-MOSFETs with 4.5 nm-thick oxide. At lower voltages this current shows a plateau that can be explained with the generation of hole-electron pairs in the space charge region and at the Si-SiO2 interface, and to carrier diffusion between the channel and the substrate. At higher voltages the substrate current steeply increases with voltage, due to trap-assisted tunneling from the substrate valence band to the gate conduction band, which becomes possible for gate voltages higher than the threshold voltage. Measurements on several devices at dark and in the presence of light, …
Computer vision profilometer: equipment and evaluation of measurements
1991
Abstract This paper describes a new equipment that measures roughness values by a computer vision (CV) technique. Measurements carried out by a CV profilometer are also evaluated. A laser source (power 2 mW), a cylindrical lens and a charge coupled device (CCD) TV-camera with a suitable optical system form an image of the profile of the sample under inspection. This image is then transformed into a binary image by thresholding and the line that divides the bright zone from the dark zone is the sample profile. From this line the characteristic roughness values can be calculated. The roughness measurements are carried out both by the CV profilometer and a stylus profilometer on eight specimen…