Search results for "threshold"

showing 10 items of 688 documents

Experimental Analysis of the Multipactor Effect With RF Pulsed Signals

2015

The main goal of this letter is the analysis of the multipactor effect within a coaxial waveguide excited by an RF pulsed signal. The variation of the multipactor RF voltage thresholdwiththe ON interval length of the pulse has been analyzed. To reach this aim, an in-house multipactor simulation code based on the Monte-Carlo algorithm has been implemented. The numerical simulations show that the multipactor RF voltage threshold increases as the ON pulse interval diminishes. In addition, an experiment was carried out to validate the proposed theoretical model, and demonstrating the excellent agreement between the theory and the experimental data. Finally, the results are compared with the 20-…

Multipactor effectbusiness.industry20-gap-crossing ruleRF breakdownInterval (mathematics)SignalElectronic Optical and Magnetic MaterialsPulse (physics)Threshold voltageOpticsTEORIA DE LA SEÑAL Y COMUNICACIONESElectronic engineeringRF pulseCoaxial waveguidesRadio frequencyMultipactor effectElectrical and Electronic EngineeringCoaxial waveguidebusinessVoltage
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Memory effects in MOS devices based on Si quantum dots

2003

Silicon quantum dots have been deposited on top of a 3-nm tunnel oxide by Low Pressure Chemical Vapour Deposition (LPCVD) and coated with a 7-nm Chemical Vapour Deposited (CVD) oxide. This stack was then incorporated in Metal-Oxide-Semiconductor structure and used as floating gate of a memory cell. The presence of 3 nm of tunnel oxides allows the injection of the charge by direct tunnel (DT) using low voltages for both program and erase operations. The charge stored in the quantum dots is able to produce a well-detectable flat band shift in the capacitors or, equivalently, a threshold voltage shift in the transistors. Furthermore, due to the presence of SiO 2 between the grains, the lateral…

Nanocrystal memoryMaterials scienceSiliconbusiness.industryQuantum dotOxidechemistry.chemical_elementBioengineeringNanotechnologyChemical vapor depositionSemiconductor deviceSettore ING-INF/01 - Elettronicalaw.inventionThreshold voltageBiomaterialsSurface coatingCapacitorchemistry.chemical_compoundchemistryMechanics of MaterialslawQuantum dotOptoelectronicsbusinessSingle electronMaterials Science and Engineering: C
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Impact of contact resistance on the electrical properties of MoS

2016

Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, R C, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) a…

Nanosciencecontact resistanceNanotechnologyMoS2temperature dependenceFull Research Papermobilitythreshold voltageBeilstein journal of nanotechnology
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Controlling electrical percolation in multicomponent carbon nanotube dispersions

2011

Carbon nanotube reinforced polymeric composites can have favourable electrical properties, which make them useful for applications such as flat-panel displays and photovoltaic devices. However, using aqueous dispersions to fabricate composites with specific physical properties requires that the processing of the nanotube dispersion be understood and controlled while in the liquid phase. Here, using a combination of experiment and theory, we study the electrical percolation of carbon nanotubes introduced into a polymer matrix, and show that the percolation threshold can be substantially lowered by adding small quantities of a conductive polymer latex. Mixing colloidal particles of different …

NanotubeMaterials scienceLatexPolymersSurface PropertiesCarbon nanotube actuatorsBiomedical EngineeringBioengineeringCarbon nanotubelaw.inventionNanocompositesElectricitylawNanotechnologyGeneral Materials ScienceElectrical and Electronic EngineeringComposite materialParticle SizeNanotubes CarbonElectric ConductivityPercolation thresholdCondensed Matter PhysicsAtomic and Molecular Physics and OpticsCarbon nanotube metal matrix compositesOptical properties of carbon nanotubesPercolationDispersion (chemistry)Monte Carlo Method
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Stability of carbon nanotubes under electron irradiation: Role of tube diameter and chirality

2005

As recent experiments demonstrate, the inner shells of multiwalled carbon nanotubes are more sensitive to electron irradiation than the outer shells. To understand the origin of such counterintuitive behavior, we employ a density-functional-theory based tight-binding method and calculate the displacement threshold energies for carbon atoms in single-walled nanotubes with different diameters and chiralities. We show that the displacement energy and the defect production rate strongly depend on the diameter of the nanotube and its chirality, with the displacement energy being lower, but saturating towards the value for graphite when the tube diameter increases. This implies that the threshold…

NanotubeMaterials sciencechemistry.chemical_element02 engineering and technologyCarbon nanotube01 natural sciencesMolecular physicslaw.inventionCondensed Matter::Materials SciencelawVacancy defect0103 physical sciencesPhysics::Atomic and Molecular ClustersElectron beam processingGraphite010306 general physicscarbon nanotubesPhysicselectrons021001 nanoscience & nanotechnologyCondensed Matter PhysicsThreshold energyElectronic Optical and Magnetic MaterialsOptical properties of carbon nanotubeschemistryAtomic physics0210 nano-technologyCarbonPhysical Review B
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Resonance properties of different neuronal populations in the immature mouse neocortex

2012

In vivo recordings in the immature neocortex revealed spontaneous and sensory-driven oscillatory activity from delta (0.5-4 Hz) to gamma (30-100 Hz) frequencies. In order to investigate whether the resonance properties of distinct neuronal populations in the immature neocortex contribute to these network oscillations, we performed whole-cell patch-clamp recordings from visually identified neurons in tangential and coronal neocortical slices from postnatal day (P)0-P7 C57Bl/6 mice. Subthreshold resonance was analysed by sinusoidal current injection of varying frequency. All Cajal-Retzius cells showed subthreshold resonance, with an average frequency of 2.6 ± 0.1 Hz (n = 60), which was massiv…

NeocortexSubthreshold conductionChemistrySinusoidal currentGeneral NeuroscienceResonancechemistry.chemical_elementCalciumNuclear magnetic resonancemedicine.anatomical_structurenervous systemSubplatemedicinePatch clampPostnatal dayNeuroscienceEuropean Journal of Neuroscience
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Disruption of Slc4a10 augments neuronal excitability and modulates synaptic short-term plasticity

2015

Slc4a10 is a Na(+)-coupled Cl(-)-HCO3 (-) exchanger, which is expressed in principal and inhibitory neurons as well as in choroid plexus epithelial cells of the brain. Slc4a10 knockout (KO) mice have collapsed brain ventricles and display an increased seizure threshold, while heterozygous deletions in man have been associated with idiopathic epilepsy and other neurological symptoms. To further characterize the role of Slc4a10 for network excitability, we compared input-output relations as well as short and long term changes of evoked field potentials in Slc4a10 KO and wildtype (WT) mice. While responses of CA1 pyramidal neurons to stimulation of Schaffer collaterals were increased in Slc4a1…

Neocortexsynaptic plasticitySeizure thresholdGABAergic inhibitionNeural facilitationHippocampusLong-term potentiationBiologyInhibitory postsynaptic potentiallcsh:RC321-571field potentialCellular and Molecular Neurosciencemedicine.anatomical_structureKnockout mouseSynaptic plasticitymedicineLTPNeuroscienceSLC4A10lcsh:Neurosciences. Biological psychiatry. NeuropsychiatryOriginal ResearchNeuroscienceFrontiers in Cellular Neuroscience
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Effects of high-energy electrons in advanced NAND flash memories

2016

We study the effects of high-energy electrons on advanced NAND Flash memories with multi-level and single-level cell architecture. We analyze the error rate in floating gate cells as a function of electron energy, evaluate the impact of total ionizing dose, and discuss the physical origin of the observed behavior.

NeutronsHigh energyRadiationElectron energy010308 nuclear & particles physicsComputer sciencebusiness.industryNAND gateAlpha Particles; Flash; Neutrons; Radiation Effects; Single Event Upset; Electrical and Electronic Engineering; RadiationElectronAlpha Particles01 natural sciencesThreshold voltageRadiation EffectsFlash (photography)Error analysisAbsorbed dose0103 physical sciencesElectronic engineeringOptoelectronicsElectrical and Electronic EngineeringFlashbusinessSingle Event Upset2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Edge detection insensitive to changes of illumination in the image

2010

In this paper we present new edge detection algorithms which are motivated by recent developments on edge-adapted reconstruction techniques [F. Arandiga, A. Cohen, R. Donat, N. Dyn, B. Matei, Approximation of piecewise smooth functions and images by edge-adapted (ENO-EA) nonlinear multiresolution techniques, Appl. Comput. Harmon. Anal. 24 (2) (2008) 225-250]. They are based on comparing local quantities rather than on filtering and thresholding. This comparison process is invariant under certain transformations that model light changes in the image, hence we obtain edge detection algorithms which are insensitive to changes in illumination.

Nonlinear systembusiness.industrySignal ProcessingPiecewiseWavelet transformComputer visionComputer Vision and Pattern RecognitionArtificial intelligenceInvariant (mathematics)businessThresholdingEdge detectionMathematicsImage and Vision Computing
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Spin dependence of {\eta} meson production in proton-proton collisions close to threshold

2018

Taking advantage of the high acceptance and axial symmetry of the WASA-at-COSY detector, and the high degree of the polarized proton beam of COSY, the reaction pp{\to} pp{\eta} has been measured close to threshold to explore the analyzing power Ay. The angular distribution of Ay is determined with the precision improved by more than one order of magnitude with respect to previous results allowing a first accurate comparison with theoretical predictions. The determined analyzing power is consistent with zero for an excess energy of Q = 15 MeV signaling s wave production with no evidence for higher partial waves. At Q = 72 MeV the data reveals strong interference of P s and P p partial waves …

Nuclear TheoryGeneral Physics and Astronomy01 natural sciencesHigh Energy Physics - ExperimentNuclear physics0103 physical sciencesddc:530FACILITYNEAR-THRESHOLD010306 general physicsNUCLEONNuclear ExperimentNuclear theoryNuclear ExperimentPhysicsQUASI-FREE010308 nuclear & particles physicsEta mesonDetectorCOSYPolarization (waves)Near thresholdHigh Energy Physics - PhenomenologyPhysics::Accelerator PhysicsAxial symmetryNucleon
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