Search results for "trap"

showing 10 items of 2144 documents

CCDC 751046: Experimental Crystal Structure Determination

2010

Related Article: J.Vicente, I.Saura-Llamas, J.Turpin, D.Bautista, C.R.de Arellano, P.G.Jones|2009|Organometallics|28|4175|doi:10.1021/om9002895

(eta^2^-4-(2-(Aminomethyl)-5-chlorophenyl)-1234-tetraphenylbuta-13-dien-1-yl)-(bromo)-palladium dimethylsulfoxide solvateSpace GroupCrystallographyCrystal SystemCrystal StructureCell ParametersExperimental 3D Coordinates
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CCDC 1059036: Experimental Crystal Structure Determination

2021

Related Article: Agnieszka ��apczuk-Krygier, Katarzyna Kazimierczuk, Jerzy Pikies, Mar R��os-Guti��rrez|2021|Molecules|26|7282|doi:10.3390/molecules26237282

(mu-oxido)-bis([bis(diethylamino)]tetraphosphetanido)-tetrakis(cyclopentadienyl)-di-zirconium(iv)Space GroupCrystallographyCrystal SystemCrystal StructureCell ParametersExperimental 3D Coordinates
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CCDC 738677: Experimental Crystal Structure Determination

2010

Related Article: J.Ferrando-Soria, M.Castellano, C.Yuste, F.Lloret, M.Julve, O.Fabelo, C.Ruiz-Perez, S.-E.Stiriba, R.Ruiz-Garcia, J.Cano|2010|Inorg.Chim.Acta|363|1666|doi:10.1016/j.ica.2009.12.007

(mu2-Biphenyl-44'-diamine-N4N4')-bis(tris(2-aminoethyl)amine)-di-copper(ii) tetraperchlorateSpace GroupCrystallographyCrystal SystemCrystal StructureCell ParametersExperimental 3D Coordinates
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CCDC 766061: Experimental Crystal Structure Determination

2011

Related Article: F.Pelletier, V.Comte, A.Massard, M.Wenzel, S.Toulot, P.Richard, M.Picquet, P.Le Gendre, O.Zava, F.Edafe, A.Casini, P.J.Dyson|2010|J.Med.Chem.|53|6923|doi:10.1021/jm1004804

(mu~2~-Chloro)-(mu~2~-eta^5^-diphenylphosphino-cyclopentadienyl)-dichloro-(eta^5^-cyclopentadienyl)-(eta^6^-p-cymene)-ruthenium-titanium tetraphenylborateSpace GroupCrystallographyCrystal SystemCrystal StructureCell ParametersExperimental 3D Coordinates
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CCDC 225461: Experimental Crystal Structure Determination

2004

Related Article: M.G.Basallote, F.Estevan, M.Feliz, M.J.Fernandez-Trujillo, D.A.Hoyos, R.Llusar, S.Uriel, C.Vicent|2004|Dalton Trans.||530|doi:10.1039/b315841a

(mu~3~-Selenido)-tris(mu~2~-selenido)-dihydrido-hydroxy-tris(12-bis(dimethylphosphino)ethane-PP')-tri-tungsten tetraphenylborateSpace GroupCrystallographyCrystal SystemCrystal StructureCell ParametersExperimental 3D Coordinates
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CCDC 711358: Experimental Crystal Structure Determination

2010

Related Article: E.Pardo, D.Cangussu, R.Lescouezec, Y.Journaux, J.Pasan, F.S.Delgado, C.Ruiz-Perez, R.Ruiz-Garcia, J.Cano, M.Julve, F.Lloret|2009|Inorg.Chem.|48|4661|doi:10.1021/ic900055d

(mu~4~-NN'-(14-Phenylene)-bis(oxamato))-tetrakis(bis(3-aminopropyl)amine)-tetra-copper(ii) tetraperchlorate dihydrateSpace GroupCrystallographyCrystal SystemCrystal StructureCell ParametersExperimental 3D Coordinates
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Migration kinetics of ion-implanted beryllium in glassy carbon

2008

Abstract Migration kinetics of low-concentration implanted 7 Be in glassy carbon has been studied by the modified radiotracer technique at temperatures 1285 °C and 1340 °C. The annealed sample concentration profiles show two distinctive components: (i) Main profile broadening assigned to beryllium trapping in defects during annealing. (ii) Tail parts on both sides of the profile maximum related to faster migration. Of the latter the profile representing bulk diffusion lies on the region free of defect influence and is well described by concentration-independent diffusivity. The features of the concentration profile broadening towards the sample surface indicate partial Be trapping in defect…

010302 applied physicsAnnealing (metallurgy)Mechanical EngineeringAnalytical chemistrychemistry.chemical_elementDiamond02 engineering and technologyGeneral ChemistryTrappingengineering.materialGlassy carbon021001 nanoscience & nanotechnologyThermal diffusivity01 natural sciencesElectronic Optical and Magnetic MaterialsIonchemistryImpurity0103 physical sciencesMaterials ChemistryengineeringElectrical and Electronic EngineeringBeryllium0210 nano-technologyDiamond and Related Materials
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A quartz amplifier for high-sensitivity Fourier-transform ion-cyclotron-resonance measurements with trapped ions

2019

Single-ion sensitivity is obtained in precision Penning-trap experiments devoted to light (anti)particles or ions with low mass-to-charge ratios, by adding an inductance coil to an amplifier connected to the trap, both operated at 4 K. However, single-ion sensitivity has not been reached on heavy singly or doubly charged ions. In this publication, we present a new system to reach this point, based on the use of a quartz crystal as an inductance, together with a newly developed broad-band (BB) amplifier. We detect the reduced-cyclotron frequency of 40Ca+ ions stored in a 7-tesla open-ring Penning trap. By comparing the detected electric signal obtained with the BB amplifier and the fluoresce…

010302 applied physicsMaterials scienceEquivalent series resistanceAmplifierPenning trap01 natural sciences7. Clean energySignalFourier transform ion cyclotron resonance010305 fluids & plasmasIonCrystal0103 physical sciencesAtomic physicsInstrumentationSensitivity (electronics)Review of Scientific Instruments
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Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors

2019

GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.

010302 applied physicsMaterials sciencebusiness.industryTransistorElectrical breakdownAlgan gan02 engineering and technologyTrappingConverters021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic Materialslaw.inventionDynamic resistancelaw0103 physical sciencesMaterials ChemistryOptoelectronicsElectronicsElectrical and Electronic Engineering0210 nano-technologybusinessSaturation (magnetic)Semiconductor Science and Technology
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Theoretical and experimental studies of the neutron rich fission product yields at intermediate energies

2012

A new method to measure the fission product independent yields employing the ion guide technique and a Penning trap as a precision mass filter, which allows an unambiguous identification of the nuclides is presented. The method was used to determine the independent yields in the proton-induced fission of 232 Th and 238 U at 25 MeV. The data were analyzed with the consistent model for description of the fission product formation cross section at the projectile energies up to 100 MeV. Pre-compound nucleon emission is described with the two-component exciton model using Monte Carlo method. Decay of excited compound nuclei is treated within time-dependent statistical model with inclusion of the…

010302 applied physicsNuclear fission productCluster decay010308 nuclear & particles physicsFissionChemistryPhysicsQC1-999Nuclear TheoryPenning trap01 natural sciences7. Clean energyNuclear physics0103 physical sciencesNeutronNuclideAtomic physicsNuclear ExperimentNucleonNuclear densityEPJ Web of Conferences
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