Search results for "trap"

showing 10 items of 2144 documents

Radioactive ion beam manipulation at the IGISOL-4 facility

2020

The IGISOL-4 facility in the JYFL Accelerator Laboratory of the University of Jyvaskyla (JYFL-ACCLAB) produces low-energy radioactive ion beams, primarily for nuclear spectroscopy, utilizing an ion guide-based, ISOL-type mass separator. Recently, new ion manipulation techniques have been introduced at the IGISOL-4 including the application of the PI-ICR (Phase-Imaging Ion Cyclotron Resonance) technique at the JYFLTRAP Penning trap, as well as commissioning of a Multi-Reflection Time-Of-Flight (MR-TOF) separator/spectrometer. The successful operation of the MR-TOF also required significant improvement of the Radio-Frequency Quadrupole (RFQ) cooler and buncher device beam pulse time structure…

Materials scienceSpectrometerIon beamPhysicsQC1-999tutkimuslaitteethiukkaskiihdyttimetPenning trapIon sourceIonNuclear physicsBeamlineIonizationPhysics::Accelerator PhysicsydinfysiikkaNuclear ExperimentIon cyclotron resonanceEPJ Web of Conferences
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Trapped metal cluster ions

1995

An overview is given of experiments with stored metal cluster ions in a Penning trap system. The setup allows axial injection of clusters produced in an external source and a time-of-flight mass analysis of the reaction products after axial ejection. The system's options include the selection of stored ions, the manipulation of their orbits, addition of reactant and buffer gases and axial optical access for laser spectroscopic studies. As described by various examples, investigations have been made with respect to the development of trapping techniques and the characterization of metal clusters in terms of their physical and chemical properties.

Materials scienceTrappingCondensed Matter PhysicsLaserPenning trapAtomic and Molecular Physics and OpticsBuffer (optical fiber)Characterization (materials science)law.inventionIonMetallawvisual_artCluster (physics)visual_art.visual_art_mediumAtomic physicsMathematical PhysicsPhysica Scripta
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Electronic Properties of Point Defects in Metals

1982

Recent progress in electronic structure and related properties of point defects in metals is reviewed. Topics discussed include transition metal impurities in a non-magnetic host, construction of potential energy surfaces from effective-medium theories, trapping of light interstitials, and pair potential in metals.

Materials scienceTrappingElectronic structureCondensed Matter PhysicsPotential energyCrystallographic defectAtomic and Molecular Physics and OpticsTransition metalChemical physicsImpurityCondensed Matter::Strongly Correlated ElectronsAtomic physicsPair potentialMathematical PhysicsElectronic propertiesPhysica Scripta
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Axialisation, cooling and quenching of $\mathsf{Ba^+}$ ions in a Penning trap

1998

Collisions of ions, stored in a Penning trap, with neutral background molecules usually lead to rapid ion loss from the trap unless the ions are excited by the sum of the frequencies of the reduced cyclotron and magnetron motion. Then the ions are cooled by collisions and are driven to the trap centre leading to substantial increase of the storage time. Furthermore in a three level system including a long living metastable state collisions deexcite this metastable state and increase the population density in the ionic ground state. In a laser spectroscopic experiment we demonstrate the advantages of collisions on Ba+ ions stored in a Penning trap. The combined action of metastable state que…

Materials scienceZeeman effectQuenching (fluorescence)Penning trapAtomic and Molecular Physics and OpticsIonsymbols.namesakeExcited stateMetastabilitysymbolsPhysics::Atomic PhysicsIon trapAtomic physicsGround stateThe European Physical Journal D - Atomic, Molecular and Optical Physics
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Nanocrystal memories for FLASH device applications

2004

Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an array of silicon nanocrystals, have been fabricated and characterized. Single cells and cell arrays of 1 Mb and 10 k have been realized by using a conventional 0.15 μm FLASH technology. Si nanocrystals are deposited on top of tunnel oxide by chemical vapor deposition. Properties of the memory cell have been investigated both for NAND and NOR applications in terms of program/erase window and programming times. Suitable program/erase threshold voltage window can be achieved with fast voltage pulses by adequate choice of tunnel and control dielectric. The feasibility of dual bit storage is also pro…

Materials sciencebusiness.industryElectronic Optical and Magnetic MaterialNAND gateNanotechnologyChemical vapor depositionNanocrystalReliabilityCondensed Matter PhysicsFlash memorySettore ING-INF/01 - ElettronicaFlash memoryElectronic Optical and Magnetic MaterialsThreshold voltageFlash (photography)NanocrystalMemory cellHardware_GENERALCharge trap flashMaterials ChemistryHardware_INTEGRATEDCIRCUITSOptoelectronicsElectrical and Electronic Engineeringbusiness
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Hot carrier effects in n-MOSFETs with SiO2/HfO2/HfSiO gate stack and TaN metal gate

2009

Charge trapping and trap generation in field-effect transistors with SiO2/HfO2/HfSiO gate stack and TaN metal gate electrode are investigated under uniform and non-uniform charge injection along the channel. Compared to constant voltage stress (CVS), hot carrier stress (HCS) exhibits more severe degradation in transconductance and subthreshold swing. By applying a detrapping bias, it is demonstrated that charge trapping induced degradation is reversible during CVS, while the damage is permanent for hot carrier injection case. © 2008 Elsevier B.V. All rights reserved.

Materials sciencebusiness.industryTransconductanceTransistorTrappingCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionStress (mechanics)lawElectrodeOptoelectronicsDegradation (geology)High-k dielectrics Hot carrier stress Constant voltage stressElectrical and Electronic EngineeringMetal gatebusinessHot-carrier injection
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TSL and fractional glow study of Ge-doped α-quartz

2013

Crystalline α-quartz doped with 0.1wt% and 0.9wt% germanium was studied using TSL and FGT equipment. Sample was chosen because previously it is known that Ge in quartz is efficient trap for electrons, therefore it could be used for detection of hypothetic self-trapped hole in α-quartz. However previous investigations of ODMR and TSL shows that in α-quartz the hole is still mobile and trapping occurs only on defect states. The activation energies for both TSL peaks are found by fractional glow and Hoogenstraaten method. The TSL distribution changes depending on Ge concentration and also on irradiation type. The TSL peaks below 70K in quartz doped with Ge could belong to hole trapped on Ge.

Materials sciencechemistryDopingAnalytical chemistrychemistry.chemical_elementGermaniumTrappingElectronIrradiationQuartzIOP Conference Series: Materials Science and Engineering
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Low Temperature Afterglow from SrAl <sub>2</sub>O <sub>4</sub>: EU, Dy, B Containing Glass

2020

SrAl2O4: Eu, Dy, B particles were added in a phosphate glass (90NaPO3-10NaF (in mol%)) using the direct doping method. For the first time, the composition of the particles prior to and after embedding them in the glass was analysed using EPMA analysis. Boron was found to be incorporated in already distorted surroundings creating new trapping centers in the particles which are thought to be favourable for the tunnelling process and so for the afterglow at 10K. Despite the partial decomposition of the particles, the glass exhibit afterglow at low temperature confirming to be promising materials for low temperature applications.

Materials sciencechemistryDopingAnalytical chemistrychemistry.chemical_elementPartial decompositionTrappingElectron microprobeBoronQuantum tunnellingPhosphate glassAfterglowSSRN Electronic Journal
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Accuracy tests of atomic mass measurements in a penning trap using externally produced highly charged ions

1997

The SMILETRAP experimental set-up, a Penning trap mass spectrometer for highly charged ions, is described. Capture and observation of cyclotron frequencies of externally produced highly charged ions is demonstrated. Mass measurements utilizing different charge states and species to verify the consistency of the measurements are presented. A relative uncertainty <3 10−9 is attained in comparisons between highly charged 12C, 14N, 16O, 20Ne and singly charged H, H2 and H3 ions. The current limitations and future developments are discussed.

Materials sciencelawCyclotronIon trapAtomic physicsCondensed Matter PhysicsPenning trapMass spectrometryMathematical PhysicsAtomic and Molecular Physics and OpticsAtomic masslaw.inventionIonPhysica Scripta
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Hyperpolarized helium-3 gas magnetic resonance imaging of the lung.

2003

3He magnetic resonance imaging (MRI) is capable of producing new and regional information on normal and abnormal lung ventilation. The basis of 3He MRI involves "optical pumping" to hyperpolarize the 3He nuclei by photon angular momentum transfer. The hyperpolarized gas is administered via inhalation. 3He is an inert, nontoxic noble gas and absorbed in less than 0.1%. Imaging consists of a four-step protocol. 1) Gas density 3He MRI with high spatial resolution displays the distribution of a 3He bolus in a 10-second breath-hold. An almost homogeneous distribution is regarded as normal. Patients with lung diseases show multiple ventilation defects. 3He MRI has been shown to be more sensitive …

Materials sciencemedicine.diagnostic_testMagnetic resonance microscopyDynamic imagingPartial PressureMagnetic resonance imagingHyperpolarized Helium 3Air trappingHeliumMagnetic Resonance ImagingSensitivity and SpecificityPulmonary function testingNuclear magnetic resonanceIsotopesmedicineEffective diffusion coefficientHumansRadiology Nuclear Medicine and imagingmedicine.symptomPulmonary VentilationPerfusionLungTopics in magnetic resonance imaging : TMRI
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