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RESEARCH PRODUCT
Hot carrier effects in n-MOSFETs with SiO2/HfO2/HfSiO gate stack and TaN metal gate
Isodiana Crupisubject
Materials sciencebusiness.industryTransconductanceTransistorTrappingCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionStress (mechanics)lawElectrodeOptoelectronicsDegradation (geology)High-k dielectrics Hot carrier stress Constant voltage stressElectrical and Electronic EngineeringMetal gatebusinessHot-carrier injectiondescription
Charge trapping and trap generation in field-effect transistors with SiO2/HfO2/HfSiO gate stack and TaN metal gate electrode are investigated under uniform and non-uniform charge injection along the channel. Compared to constant voltage stress (CVS), hot carrier stress (HCS) exhibits more severe degradation in transconductance and subthreshold swing. By applying a detrapping bias, it is demonstrated that charge trapping induced degradation is reversible during CVS, while the damage is permanent for hot carrier injection case. © 2008 Elsevier B.V. All rights reserved.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2009-01-01 |