Search results for "Transconductance"
showing 8 items of 8 documents
Transconductance Converters Based on Current Mirrors Applied to pH Measurement Using ISFET Sensors
2009
New transconductance circuits (V/I converters) are designed based on current mirrors and operational amplifiers. Their input/output characteristics and the influence of DC parameters are obtained. Experimental results were performed, comparing them with the simulated results. An electronic instrumentation circuit is designed based on one of the transconductance converters analyzed. The purpose of this circuit was to condition the response of an ion-sensitive field-effect transistor (ISFET) to measure pH. In the proposed application, the V/I converter presented provides the stability and accuracy of the ISFET operating point, making an easy characterization procedure and the design of multic…
Aqueous electrolyte-gated ZnO transistors for environmental and biological sensing
2014
Electrolyte-gated transistors (EGTs) based on ZnO thin films, obtained by solution processing of suspensions of nanoparticles, have a low turn-on voltage (<0.5 V), a high on/off ratio and transconductance exceeding 0.2 mS. Importantly, the ZnO surface can be functionalized with a large variety of molecular recognition elements, making these devices ideal transducers in physiological and environmental monitoring. We present simple glucose-sensing and ion-selective EGTs, demonstrating the versatility of such devices in biosensing.
Hot carrier effects in n-MOSFETs with SiO2/HfO2/HfSiO gate stack and TaN metal gate
2009
Charge trapping and trap generation in field-effect transistors with SiO2/HfO2/HfSiO gate stack and TaN metal gate electrode are investigated under uniform and non-uniform charge injection along the channel. Compared to constant voltage stress (CVS), hot carrier stress (HCS) exhibits more severe degradation in transconductance and subthreshold swing. By applying a detrapping bias, it is demonstrated that charge trapping induced degradation is reversible during CVS, while the damage is permanent for hot carrier injection case. © 2008 Elsevier B.V. All rights reserved.
Ion-Selective Organic Electrochemical Transistors
2014
Ion-selective organic electrochemical transistors with sensitivity to potassium approaching 50 μA dec(-1) are demonstrated. The remarkable sensitivity arises from the use of high transconductance devices, where the conducting polymer is in direct contact with a reference gel electrolyte and integrated with an ion-selective membrane.
Programmable VLSI cubic-like function implementation
2006
An analogue VLSI implementation of a cubic-like function is presented, whose design is focused to reduce the circuit complexity. Simulations show that the V–I characteristic of the circuit resembles a cubic function, which can be easily adjusted by changing the bias parameters.
Controlling the mode of operation of organic transistors through side chain engineering
2016
Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode…
Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries
2019
In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.
Modeling the Sequential Switching Shunt Series Regulator
2005
This letter characterizes, in terms of the bandwidth and limit cycle frequency of its constituent subsystems, the sequential switching shunt series regulator -S/sup 4/R, a high-efficiency, low-mass and volume power cell devised to power the next generation of regulated power buses in telecommunication spacecrafts. Transconductance power source modeling is used to obtain linear and nonlinear models. These are used to establish a design control strategy which involves the dynamic response in large load requirements or at the end of the satellite life. Simulations and experimental results are also given to demonstrate the validity of the model.