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RESEARCH PRODUCT
Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries
Muraleetharan BoopathiJong Hyun AhnP. CusumanoE.f. CalandraF. WuMaximillian ThurmerChristian BenzSalvatore StivalaHimadri PandeyC. ArnoneGeethu BalachandranMin-ho JangRomain DanneauAlessandro BusaccaAntonio BenfanteWolfram H. P. PerniceMarco A. GiambraRiccardo Pernicesubject
Work (thermodynamics)FabricationMaterials scienceTransconductanceOxide02 engineering and technologySettore ING-INF/01 - Elettronica01 natural scienceslaw.inventionchemistry.chemical_compoundlaw0103 physical sciencesElectrical and Electronic Engineering010302 applied physicsbusiness.industryGrapheneGraphene metal-oxide graphene field-effect transistors (MOGFETs) microwave transistors clamped geometries meandered graphene contacts.TransistorSettore ING-INF/02 - Campi Elettromagnetici021001 nanoscience & nanotechnologyElectronic Optical and Magnetic MaterialschemistryLogic gateParasitic elementOptoelectronics0210 nano-technologybusinessBiotechnologydescription
In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-01-01 | IEEE Journal of the Electron Devices Society |