Search results for "tunne"
showing 10 items of 739 documents
Background charge fluctuations in SET-transistors
1996
We have studied fluctuations of background charges in single electron tunnelling (SET) transistors. Changes in the charge distribution of the substrate and other dielectric materials near the transistor cause uncontrolled changes in its conductivity. We have observed big differences in the type and frequency of the conductivity fluctuations between different samples, but no systematic dependence on the substrate material has been found. To obtain information about the location of the source of the charge noise, we performed coincidence measurements on two separate SET transistors which were made very near to each other. The results suggest that the conductivity fluctuations are caused by ch…
Electronic correlation effects and the Coulomb gap at finite temperature.
2000
We have investigated the effect of the long-range Coulomb interaction on the one-particle excitation spectrum of n-type Germanium, using tunneling spectroscopy on mechanically controllable break junctions. The tunnel conductance was measured as a function of energy and temperature. At low temperatures, the spectra reveal a minimum at zero bias voltage due to the Coulomb gap. In the temperature range above 1 K the Coulomb gap is filled by thermal excitations. This behavior is reflected in the temperature dependence of the variable-range hopping resitivity measured on the same samples: Up to a few degrees Kelvin the Efros-Shkovskii ln$R \propto T^{-1/2}$ law is obeyed, whereas at higher tempe…
Landau-Zener-Stueckelberg effect in a model of interacting tunneling systems
2003
The Landau-Zener-Stueckelberg (LZS) effect in a model system of interacting tunneling particles is studied numerically and analytically. Each of N tunneling particles interacts with each of the others with the same coupling J. This problem maps onto that of the LZS effect for a large spin S=N/2. The mean-field limit N=>\infty corresponds to the classical limit S=>\infty for the effective spin. It is shown that the ferromagnetic coupling J>0 tends to suppress the LZS transitions. For N=>\infty there is a critical value of J above which the staying probability P does not go to zero in the slow sweep limit, unlike the standard LZS effect. In the same limit for J>0 LZS transition…
Spin transfer torques and spin-dependent transport in a metallic F/AF/N tunneling junction
2018
We study spin-dependent electron transport through a ferromagnetic-antiferromagnetic-normal metal tunneling junction subject to a voltage or temperature bias, in the absence of spin-orbit coupling. We derive microscopic formulas for various types of spin torque acting on the antiferromagnet as well as for charge and spin currents flowing through the junction. The obtained results are applicable in the limit of slow magnetization dynamics. We identify a parameter regime in which an unconventional damping-like torque can become comparable in magnitude to the equivalent of the conventional Slonczewski's torque generalized to antiferromagnets. Moreover, we show that the antiferromagnetic sublat…
Microwave induced co-tunneling in single electron tunneling transistors
2002
Abstract The influence of microwaves on the co-tunneling in single electron tunneling transistors has been investigated as function of frequency and power in the temperature range from 150 to 500 mK. All 20 low frequency connections and the RF line were filtered, and the whole cryostat was suspended on rubber bellows. Cross-talk was minimized by using individual coaxial lines between the sample and the room temperature electronics. The co-tunneling experiments were performed at zero DC bias current by measuring the voltage response to a very small amplitude 2 Hz current modulation with the gate voltage fixed at maximum Coulomb blockade. With the microwave signal applied to one side of the t…
Electrodynamics in complex systems
1996
This paper discusses recent theoretical efforts to develop a general and flexible method for the calculation of the field distributions around and inside complex optical systems involving both dielectric and metallic materials. Starting from the usual light-matter coupling Hamiltonian, we derive a self-consistent equation for the optical field in arbitrary optical systems composed of N different subdomains. We show that an appropriate solving procedure based on the real-space discretization of each subdomain raises the present approach to the rank of an accurate predictive numerical scheme. In order to illustrate its applicability, we use this formalism to address challenging problems relat…
Coherent Spin Dependent Landau-Zener Tunneling in Mixed Valence Dimers
2011
In this contribution we introduce the concept of single molecule ferroelectric based on the vibronic pseudo Jahn-Teller model of mixed valence dimeric clusters belonging to the Robin and Day class II compounds. We elucidate the main factors controlling the nonadiabatic Landau-Zener tunneling between the low lying vibronic levels induced by a pulse of the electric field. The transition probabilities are shown to be dependent on the both time of the pulse and the total spin of the cluster. A possibility to control the spin-dependent Landau-Zener tunneling by applying a static magnetic field is discussed.
Resonant Tunneling in 2D Waveguides in Magnetic Field
2021
Chapter 7 presents an asymptotic and numerical studies of resonant tunneling in a two-dimensional waveguide with two-narrows in magnetic field. It is supposed that the electron energy is between the first and the second thresholds.
Quantum dot state initialization by control of tunneling rates
2019
We study the loading of electrons into a quantum dot with dynamically controlled tunnel barriers. We introduce a method to measure tunneling rates for individual discrete states and to identify their relaxation paths. Exponential selectivity of the tunnel coupling enables loading into specific quantum dot states by tuning independently energy and rates. While for the single-electron case orbital relaxation leads to fast transition into the ground state, for electron pairs triplet-to-singlet relaxation is suppressed by long spin-flip times. This enables the fast gate-controlled initialization of either a singlet or a triplet electron pair state in a quantum dot with broad potential applicati…
Arrays of normal metal tunnel junctions in weak Coulomb blockade regime
1995
Universal features of I–V characteristics of one‐dimensional arrays of normal metal tunnel junctions have been tested against inhomogenities in the junction parameters, number of junctions in the array, and magnetic field. We find that the differential conductance versus bias voltage obeys the analytic form to within 1% if the fabrication errors are smaller than 10% in junction areas, and if the array has more than ten junctions. Furthermore, the universal relation is insensitive to magnetic field at least up to 8 T.