Search results for "wires"

showing 10 items of 174 documents

Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers

2002

Multilayer structure containing vertically stacked InAs/InP self-assembled quantum wires have been successfully grown by molecular-beam epitaxy. The influence of the InP spacer layer thickness on the structural and optical properties of the wire superlattice has been studied by means of transmission electron microscopy and photoluminescence. The coherent propagation of the strain field in the sample with a 5-nm-thick spacer determines by a size filtering effect a good homogeneity and uniformity of the wire stacks, and hence a good optical quality. The exciton recombination dynamics in the wire superlattice cannot be related to thermal escape of carriers out to the barriers, as occurs in sin…

Materials sciencePhotoluminescenceCondensed matter physicsSuperlatticeExcitonQuantum wiresStackingPhysics::OpticsEpitaxyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter::Materials ScienceMolecular-beam epitaxyTransmission electron microscopyMultilayer structureHomogeneity (physics)ExcitonPhotoluminescenceMolecular beam epitaxy
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Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires

2003

3 páginas, 2 figuras.-- PACS: 73.21.Hb; 78.55.Cr; 78.67.Lt.-- Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002.

Materials sciencePhotoluminescenceCondensed matter physicsbusiness.industryQuantum wiresPhysics::OpticsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsLayer thicknessAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsSelf assembledCondensed Matter::Materials ScienceHomogeneity (physics)Physics::Accelerator PhysicsOptoelectronicsVertical stacksbusinessQuantumPhotoluminescenceMolecular beam epitaxy
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Defect spectroscopy of single ZnO microwires

2014

The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 1018 cm3 . This combination of tech…

Materials sciencePhotoluminescenceDeep levelbusiness.industryBand gapCiencias FísicasWide-bandgap semiconductorNanowireGeneral Physics and Astronomy//purl.org/becyt/ford/1.3 [https]Crystallographic defect//purl.org/becyt/ford/1 [https]NanolithographyMicrowiresZnOOptoelectronicsDefectsSpectroscopybusinessCIENCIAS NATURALES Y EXACTASSpectroscopyFísica de los Materiales Condensados
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Ultrathin silicon nanowires for optical and electrical nitrogen dioxide detection

2021

The ever-stronger attention paid to enhancing safety in the workplace has led to novel sensor development and improvement. Despite the technological progress, nanostructured sensors are not being commercially transferred due to expensive and non-microelectronic compatible materials and processing approaches. In this paper, the realization of a cost-effective sensor based on ultrathin silicon nanowires (Si NWs) for the detection of nitrogen dioxide (NO2) is reported. A modification of the metal-assisted chemical etching method allows light-emitting silicon nanowires to be obtained through a fast, low-cost, and industrially compatible approach. NO2 is a well-known dangerous gas that, even wit…

Materials sciencePhotoluminescenceHigh interestGeneral Chemical EngineeringNanotechnology02 engineering and technology01 natural sciencesArticleHuman healthchemistry.chemical_compoundSilicon nanowires0103 physical sciencesGeneral Materials ScienceNitrogen dioxideSilicon nanowiresQD1-999Nitrogen dioxide010302 applied physicsGas sensing; Light-emission; Nitrogen dioxide; Silicon nanowiresLight-emission021001 nanoscience & nanotechnologyIsotropic etchingChemistrychemistryGas sensing Light-emission Nitrogen dioxide Silicon nanowiresLight emission0210 nano-technologyGas sensing
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Polarized recombination of acoustically transported carriers in GaAs nanowires

2012

: The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation d…

Materials sciencePhotoluminescenceSurface acoustic wavesNanowireNanochemistryNanotechnologyElectronEnginyeria acústicaCharge transportMaterials Science(all)Spin transportPolarizationGeneral Materials SciencePhotoluminescenceWurtzite crystal structureNano Expressbusiness.industryNanowiresSurface acoustic waveGaAsCiència dels materialsPolarization (waves)Condensed Matter PhysicsPiezoelectricityOptoelectronicsbusinessNanoscale Research Letters
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Growth, structural and optical properties of GaN/AlN and GaN/GaInN nanowire heterostructures

2012

Abstract After discussing the GaN NW nucleation issue, we will present the structural properties of axial and radial (i.e. core/shell) GaN/AlN NW heterostructures and adress the issue of critical thickness during the growth of such heterostructures. Next, we will present the growth of InGaN NWs on a GaN NW base. It will be shown that the morphology and structural properties of the InGaN NW sections depend on the In content: for high In content a flat top is observed and plastic relaxation is occuring, with mismatch dislocations formed at the InGaN/GaN interface. By contrast, for In content below 25% InGaN NWs exhibit a pencil-like shape assigned to a purely elastic strain relaxation process…

Materials sciencePhotoluminescencebusiness.industryRelaxation (NMR)NucleationNanowireShell (structure)HeterojunctionPhysics and Astronomy(all)Xrays diffractionsymbols.namesakenanowiresmolecular beam epitaxyRaman spectroscopysymbolsIII nitride wide gap semiconductorsOptoelectronicsphotoluminescencebusinessRaman spectroscopyhigh resolution electron microscopyMolecular beam epitaxyPhysics Procedia
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Simulation of Young’s moduli for hexagonal ZnO [0 0 0 1]-oriented nanowires: first principles and molecular mechanical calculations

2017

The authors thank A Gulans, B Polyakov and S Vlassov for stimulating discussions. This study has been supported by the ERA.Net RUS Plus project No. 237 Watersplit. AB, RE and SL acknowledge the financial support by the Russian Foundation for Basic Research (Grant No. 17-03-00130-a) and the assistance of the Saint Petersburg State University Computer Center in the accomplishment of high-performance computations.

Materials sciencePolymers and PlasticsComputationAb initioNanowireModuluschemistry.chemical_elementNanotechnology02 engineering and technologyZinc010402 general chemistry01 natural sciencesQuantum chemistryBiomaterials:NATURAL SCIENCES:Physics [Research Subject Categories]ab initio hybrid PBE0 calculations (CRYSTAL code)force field calculations using pairwise potentials (GULP code)Condensed matter physicsMetals and Alloysnanowire Young’s modulus YNW and its dependence on diameter dNWwurtzite-structured ZnO (bulk and nanowires)021001 nanoscience & nanotechnologyCompression (physics)Piezoelectricity0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialschemistry0210 nano-technologyMaterials Research Express
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Creep response of a LDPE-based nanocomposite

2016

Polymer nanocomposites and their behavior have been widely investigated by several paths, including mechanical, rheological, and permeability tests, finding that several parameters (such as the polymer matrix, the nanofiller, their amounts, the presence of compatibilizers, processing parameters, etc.) can influence the main properties. However, less information is available regarding the creep response of polymer nanocomposites; in particular, few or no data are reported about the combined effect of different loads and different temperatures. In this article, the creep behavior of a low density polyethylene/organomodified clay nanocomposite has been investigated. The characterization of vis…

Materials sciencePolymers and PlasticsPolymer nanocomposite02 engineering and technology010402 general chemistry01 natural sciencesViscoelasticityRheologyMaterials Chemistrymechanical propertieComposite materialpolyolefinchemistry.chemical_classificationNanocompositenanoparticleGeneral ChemistryPolymer021001 nanoscience & nanotechnology0104 chemical sciencesSurfaces Coatings and FilmsLow-density polyethyleneCreepchemistryPermeability (electromagnetism)nanowires and nanocrystalviscosity and viscoelasticity0210 nano-technology
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Growth and Characterization of Ordered PbO[sub 2] Nanowire Arrays

2008

Large arrays of PbO 2 nanowires having high aspect ratios (length-to-width ratio) were grown by potentiostatic electrodeposition into anodic alumina templates under anodic polarization. Different electrolytic solutions were used in order to obtain nanowires of pure α-PbO 2 , pure β-PbO 2 , and a a + β mixture, We have found that, in a lead nitrate bath, a crystallographic structure of nanowires depends on pH; this latter was varied adding diluted nitric acid to the electrolyte. Nanowires of pure β-PbO 2 were obtained at pH 0.6, while mixed α-PbO 2 + β-PbΟ 2 nanowires were grown at pH 2. Pure α-phase was obtained in a bath containing lead acetate at pH 6.6. In all deposition conditions, nano…

Materials scienceRenewable Energy Sustainability and the EnvironmentNanowireAnalytical chemistryLead dioxideNanotechnologyCrystal structureElectrolyteCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAnodeElectrochemical deposition Anodic alumina membranes Lead dioxide Nanowireschemistry.chemical_compoundSettore ING-IND/23 - Chimica Fisica ApplicatachemistryNitric acidMaterials ChemistryElectrochemistryVapor–liquid–solid methodPolarization (electrochemistry)Journal of The Electrochemical Society
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Electrodeposition of supported gadolinium-doped ceria solid solution nanowires

2012

Gadolinium-ceria solid solution nanowires with tunable composition have been prepared through template cathodic electrodeposition from solutions containing Ce 3+Gd 3+ in a variable ratio. The employed template is Porous Anodic Alumina because it can function as thermal resistant separator supporting the nanowires if used as ionic conductor in Solid Oxide Fuel Cell (SOFC). Scanning Electron Microscopy of the deposited nanostructures revealed that the use of ethanol as solvent and metal chloride as electrolyte allowed to prepare continuous, compact and well defined nanowires with morphological features stable even after thermal treatment. EDX compositional analysis confirms the presence of bo…

Materials scienceRenewable Energy Sustainability and the EnvironmentNanowireNanowires Gadolinium-ceria X-ray diffraction analysis and Raman SpectroscopyCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsGadolinium doped ceriaSettore ING-IND/23 - Chimica Fisica ApplicataChemical engineeringCathodic electrodepositionMaterials ChemistryElectrochemistryPorous anodic aluminaGadolinium-doped ceriaSolid solutionIonic conductor
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