0000000000004233
AUTHOR
Myeongjin Park
The Role of Emission Layer Morphology on the Enhanced Performance of Light-Emitting Diodes Based on Quantum Dot-Semiconducting Polymer Hybrids
The influence of the morphology of quantum dot (QD)-semiconducting polymer hybrid emission layers on the performance of quantum dot-based light emitting diodes (QLEDs) is systematically investigated. Chemically grafted QD-semiconducting polymer hybrids are fabricated by the ligand exchange procedure between CdSe/CdxZn1−xS QDs and a new block copolymer consisting of a carbazole-based electroactive block with a low highest occupied molecular orbital level and a disulfide-based anchor block. The performance of QLEDs with hybrid emission layers is compared with QLEDs utilizing QD-only and physically mixed QD/polymer emission layers. It is shown that only in the emission layers formed by chemica…
The effect of band gap alignment on the hole transport from semiconducting block copolymers to quantum dots
Semiconducting hole transporting block copolymers were chemically modified to adjust their energy levels to that of CdSe/CdS/CdZnS red quantum dots. Hybrids with optimized energy levels could be used to build strongly improved quantum dot based LEDs (QLEDs).
Push‐Pull Design of Bis(tridentate) Ruthenium(II) Polypyridine Chromophores as Deep Red Light Emitters in Light‐Emitting Electrochemical Cells
Light-emitting electrochemical cells (LECs) with a simple device structure were prepared by using heteroleptic bis(tridentate) ruthenium(II) complexes [1](PF6)(2)-[3](PF6)(2) as emitters. The push-pull substitution shifts the emission energy to low energy, into the NIR region. The devices emit deep red light up to a maximum emission wavelength of 755 nm [CIE (International Commission on Illumination) coordinates: x = 0.731, y = 0.269 for [3](PF6)(2)], which, to the best of our knowledge, is the lowest emission energy for LECs containing bis(tridentate) ruthenium(II) complexes. A device structure of ITO/PEDOT:PSS/ruthenium(II) complex/Ag was used, and the thickness of the emitting layer was …